NBB-310-PCBA-41X [RFMD]

CASCADABLE BROADBAND GaAs MMIC AMPLIFIER DC TO 12GHz; 级联宽带的GaAs MMIC放大器直流到12GHz的
NBB-310-PCBA-41X
型号: NBB-310-PCBA-41X
厂家: RF MICRO DEVICES    RF MICRO DEVICES
描述:

CASCADABLE BROADBAND GaAs MMIC AMPLIFIER DC TO 12GHz
级联宽带的GaAs MMIC放大器直流到12GHz的

放大器
文件: 总12页 (文件大小:281K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
NBB-310  
CASCADABLE BROADBAND  
GaAs MMIC AMPLIFIER DC TO 12GHz  
RoHS Compliant & Pb-Free Product  
Package Style: Micro-X, 4-Pin, Ceramic  
Features  
„ Reliable, Low-Cost HBT Design  
„ 13dB Gain  
GND  
4
MARKING - N6  
„ High P1dB of +15.2dBm at  
6GHz  
RF IN  
1
3 RF OUT  
„ Single Power Supply Operation  
„ 50Ω I/O Matched for High Freq.  
Use  
2
GND  
Applications  
„ Narrow and Broadband Commer-  
cial and Military Radio Designs  
„ Linear and Saturated Amplifiers  
Functional Block Diagram  
„ Gain Stage or Driver Amplifiers  
for MWRadio/Optical Designs  
(PTP/PMP/  
LMDS/UNII/VSAT/WLAN/Cellu-  
lar/DWDM)  
Product Description  
The NBB-310 cascadable broadband InGaP/GaAs MMIC amplifier is a low-cost,  
high-performance solution for general purpose RF and microwave amplification  
needs. This 50Ω gain block is based on a reliable HBT proprietary MMIC design,  
providing unsurpassed performance for small-signal applications. Designed with an  
external bias resistor, the NBB-310 provides flexibility and stability. The NBB-310 is  
packaged in a low-cost, surface-mount ceramic package, providing ease of assem-  
bly for high-volume tape-and-reel requirements. It is available in either packaged or  
chip (NBB-310-D) form, where its gold metallization is ideal for hybrid circuit  
designs.  
Ordering Information  
NBB-310  
NBB-310-T1  
NBB-310-D  
Cascadable Broadband GaAs MMIC Amplifier DC to 12GHz  
Tape & Reel, 1000 Pieces  
NBB-310 Chip Form (100 pieces minimum order)  
NBB-310-PCBA-41X Fully Assembled Evaluation Board  
NBB-X-K1 Extended Frequency InGaP Amp Designer’s Tool Kit  
Optimum Technology Matching® Applied  
GaAs HBT  
GaAs MESFET  
InGaP HBT  
SiGe BiCMOS  
Si BiCMOS  
SiGe HBT  
GaAs pHEMT  
Si CMOS  
Si BJT  
GaN HEMT  
9
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-  
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.  
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical  
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.  
Rev A11 DS070327  
1 of 12  
NBB-310  
Absolute Maximum Ratings  
Parameter  
RF Input Power  
Rating  
+20  
Unit  
dBm  
mW  
mA  
Caution! ESD sensitive device.  
Power Dissipation  
350  
Device Current  
70  
The information in this publication is believed to be accurate and reliable. How-  
ever, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use,  
nor for any infringement of patents, or other rights of third parties, resulting  
from its use. No license is granted by implication or otherwise under any patent  
or patent rights of RFMD. RFMD reserves the right to change component cir-  
cuitry, recommended application circuitry and specifications at any time without  
prior notice.  
Channel Temperature  
Operating Temperature  
Storage Temperature  
200  
°C  
-45 to +85  
-65 to +150  
°C  
°C  
Exceeding any one or a combination of these limits may cause permanent  
damage.  
Specification  
Parameter  
Unit  
Condition  
Min.  
Typ.  
Max.  
V =+5V, I =50mA, Z =50Ω, T =+25°C  
Overall  
D
CC  
0
A
Small Signal Power Gain, S21  
12.5  
12.0  
11.0  
9.0  
13.0  
12.5  
11.5  
dB  
dB  
dB  
dB  
dB  
f=0.1GHz to 1.0GHz  
f=1.0GHz to 4.0GHz  
f=4.0GHz to 8.0GHz  
f=8.0GHz to 12.0GHz  
f=0.1GHz to 8.0GHz  
f=0.1GHz to 7.0GHz  
f=7.0GHz to 10.0GHz  
10.0  
Gain Flatness, GF  
±0.6  
1.4:1  
1.75:1  
2.0:1  
12.0  
Input and Output VSWR  
f=10.0GHz to 12.0GHz  
BW3 (3dB)  
Bandwidth, BW  
GHz  
Output Power @  
-1dB Compression, P1dB  
13.8  
15.2  
14.5  
12.0  
4.9  
dBm  
dBm  
dBm  
dBm  
dB  
f=2.0GHz  
f=6.0GHz  
f=8.0GHz  
f=12.0GHz  
f=3.0GHz  
Noise Figure, NF  
Third Order Intercept, IP3  
Reverse Isolation, S12  
+24.0  
-17  
dBm  
dB  
f=2.0GHz  
f=0.1GHz to 12.0GHz  
Device Voltage, V  
4.4  
4.65  
4.9  
V
D
Gain Temperature Coefficient,  
-0.0015  
dB/°C  
δG /δT  
T
MTTF versus Temperature  
@ ICC=50mA  
Case Temperature  
Junction Temperature  
MTTF  
85  
139  
°C  
°C  
>1,000,000  
hours  
Thermal Resistance  
θ
216  
°C/W  
JC  
JT TCASE  
--------------------------  
= θJCC Watt)  
VD ICC  
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical  
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.  
2 of 12  
Rev A11 DS070327  
NBB-310  
Pin  
1
Function  
RF IN  
Description  
Interface Schematic  
RF input pin. This pin is NOT internally DC blocked. A DC blocking capacitor,  
suitable for the frequency of operation, should be used in most applica-  
tions. DC coupling of the input is not allowed, because this will override the  
internal feedback loop and cause temperature instability.  
Ground connection. For best performance, keep traces physically short  
and connect immediately to ground plane.  
2
3
GND  
RF output and bias pin. Biasing is accomplished with an external series  
RF OUT  
resistor and choke inductor to V . The resistor is selected to set the DC  
CC  
RF OUT  
current into this pin to a desired level. The resistor value is determined by  
the following equation:  
(VCC VDEVICE  
)
-------------------------------------------  
R =  
ICC  
RF IN  
Care should also be taken in the resistor selection to ensure that the cur-  
rent into the part never exceeds maximum datasheet operating current  
over the planned operating temperature. This means that a resistor  
between the supply and this pin is always required, even if a supply near  
8.0V is available, to provide DC feedback to prevent thermal runaway.  
Because DC is present on this pin, a DC blocking capacitor, suitable for the  
frequency of operation, should be used in most applications. The supply  
side of the bias network should also be well bypassed.  
Same as pin 2.  
4
GND  
Package Drawing  
45°  
0.055  
(1.40)  
UNITS:  
Inches  
(mm)  
0.040  
(1.02)  
0.070  
(1.78)  
0.020  
0.200 sq.  
(5.08)  
0.005  
(0.13)  
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical  
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.  
Rev A11 DS070327  
3 of 12  
NBB-310  
Typical Bias Configuration  
Application notes related to biasing circuit, device footprint, and thermal considerations are available on request.  
VCC  
RCC  
4
2
L choke  
(optional)  
1
3
In  
Out  
C block  
C block  
VDEVICE  
VD = 5 V  
Recommended Bias Resistor Values  
Supply Voltage, V (V)  
8
10  
12  
140  
15  
20  
300  
CC  
Bias Resistor, R (Ω)  
60  
100  
200  
CC  
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical  
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.  
4 of 12  
Rev A11 DS070327  
NBB-310  
Chip Outline Drawing - NBB-310-D  
Chip Dimensions: 0.017” x 0.017” x 0.004”  
UNITS:  
Inches  
(mm)  
Back of chip is ground.  
OUTPUT  
INPUT  
0.017 ± 0.001  
(0.44 ± 0.03)  
GND  
VIA  
0.017 ± 0.001  
(0.44 ± 0.03)  
0.004 ± 0.001  
(0.10 ± 0.03)  
Sales Criteria - Unpackaged Die  
Die Sales Information  
• All segmented die are sold 100% DC-tested. Testing parameters for wafer-level sales of die material shall be nego-  
tiated on a case-by-case basis.  
• Segmented die are selected for customer shipment in accordance with RFMD Document #6000152 - Die Product  
Final Visual Inspection Criteria1.  
• Segmented die has a minimum sales volume of 100 pieces per order. A maximum of 400 die per carrier is allow-  
able.  
Die Packaging  
• All die are packaged in GelPak ESD protective containers with the following specification:  
O.D.=2"X2", Capacity=400 Die (20X20 segments), Retention Level=High(X0).  
• GelPak ESD protective containers are placed in a static shield bag. RFMD recommends that once the bag is  
opened the GelPak/s should be stored in a controlled nitrogen environment. Do not press on the cover of a closed  
GelPak, handle by the edges only. Do not vacuum seal bags containing GelPak containers.  
• Precaution must be taken to minimize vibration of packaging during handling, as die can shift during transit 2.  
Package Storage  
• Unit packages should be kept in a dry nitrogen environment for optimal assembly, performance, and reliability.  
• Precaution must be taken to minimize vibration of packaging during handling, as die can shift during transit2.  
Die Handling  
• Proper ESD precautions must be taken when handling die material.  
• Die should be handled using vacuum pick-up equipment, or handled along the long side with a sharp pair of twee-  
zers. Do not touch die with any part of the body.  
• When using automated pick-up and placement equipment, ensure that force impact is set correctly. Excessive force  
may damage GaAs devices.  
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical  
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.  
Rev A11 DS070327  
5 of 12  
NBB-310  
Die Attach  
• The die attach process mechanically attaches the die to the circuit substrate. In addition, the utilization of proper die  
attach processes electrically connect the ground to the trace on which the chip is mounted. It also establishes the  
thermal path by which heat can leave the chip.  
• Die should be mounted to a clean, flat surface. Epoxy or eutectic die attach are both acceptable attachment meth-  
ods. Top and bottom metallization are gold. Conductive silver-filled epoxies are recommended. This procedure  
involves the use of epoxy to form a joint between the backside gold of the chip and the metallized area of the sub-  
strate.  
• All connections should be made on the topside of the die. It is essential to performance that the backside be well  
grounded and that the length of topside interconnects be minimized.  
• Some die utilize vias for effective grounding. Care must be exercised when mounting die to preclude excess run-out  
on the topside.  
Die Wire Bonding  
• Electrical connections to the chip are made through wire bonds. Either wedge or ball bonding methods are accept-  
able practices for wire bonding.  
• All bond wires should be made as short as possible.  
Notes  
1RFMD Document #6000152 - Die Product Final Visual Inspection Criteria. This document provides guidance for die inspec-  
tion personnel to determine final visual acceptance of die product prior to shipping to customers.  
2RFMD takes precautions to ensure that die product is shipped in accordance with quality standards established to minimize  
material shift. However, due to the physical size of die-level product, RFMD does not guarantee that material will not shift dur-  
ing transit, especially under extreme handling circumstances. Product replacement due to material shift will be at the discre-  
tion of RFMD.  
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical  
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.  
6 of 12  
Rev A11 DS070327  
NBB-310  
Extended Frequency InGaP Amplifier Designer’s Tool Kit  
NBB-X-K1  
This tool kit was created to assist in the design-in of the RFMD NBB- and NLB-series InGap HBT gain block amplifiers. Each tool  
kit contains the following.  
• 5 each NBB-300, NBB-310 and NBB-400 Ceramic Micro-X Amplifiers  
• 5 each NLB-300, NLB-310 and NLB-400 Plastic Micro-X Amplifiers  
• 2 Broadband Evaluation Boards and High Frequency SMA Connectors  
• Broadband Bias Instructions and Specification Summary Index for ease of operation  
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical  
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.  
Rev A11 DS070327  
7 of 12  
NBB-310  
Tape and Reel Dimensions  
All Dimensions in Millimeters  
Carrier tape basic dimensions are based on EIA 481. The pocket is designed to hold the part for shipping and loading onto SMT  
manufacturing equipment, while protecting the body and the solder terminals from damaging stresses. The individual pocket  
design can vary from vendor to vendor, but width and pitch will be consistent.  
Carrier tape is wound or placed onto a shipping reel 178 mm (7 inches) in diameter. The center hub design is large enough to  
ensure the radius formed by the carrier tape around it does not put unnecessary stress on the parts.  
Prior to shipping, moisture sensitive parts (MSL Level 2a-5a) are baked and placed into the pockets of the carrier tape. A cover  
tape is sealed over the top of the entire length of the carrier tape. The reel is sealed in a moisture barrier ESD bag with the  
appropriate units of desiccant and a humidity indicator card, which is placed in a cardboard shipping box. It is important to  
note that unused moisture sensitive parts need to be resealed in the moisture barrier bag. If the reels exceed the exposure  
limit and need to be rebaked, most carrier tape and shipping reels are not rated as bakeable at 125°C. If baking is required,  
devices may be baked according to section 4, table 4-1, column 8 of Joint Industry Standard IPC/JEDEC J-STD-033.  
Table 1 provides useful information for carrier tape and reels used for shipping the devices described in this document.  
Table 1. Tape and Reel  
Reel  
Diameter  
Inch (mm)  
Hub  
Diameter  
Inch (mm)  
Width  
(mm)  
Pocket Pitch  
(mm)  
Units per  
Reel  
RFMD Part Number  
Feed  
NBB-310  
7 (178)  
2.4 (61)  
12  
8
Single  
1000  
Notes:  
Ao = 5.8 ±.1  
Bo = 6.1 ±.1  
F = 5.50 ±.05  
Ko = 2.0 ±.1  
P = 8.0 ±.1  
1. All dimensions are in millimeters (mm).  
2. Unless otherwise specified, all dimension tolerances per EIA-481.  
3. 10 sprocket hole pitch cumulative tolerance ±.02.  
W = 12.0 ±.3  
4.0  
See Note 3  
+.1  
Ø1.5  
.0  
2.00±.05  
0.30±.05  
1.75  
W
15 inch Trailer  
Top View  
15 inch Leader  
Pin 1  
Location  
Sprocket holes toward  
rear of reel  
F
Bo  
3.1±.1  
1.3±.1  
Ko  
1.3±.1  
3.1±.1  
P
Ao  
Direction of Feed  
Figure 1. Carrier Tape Drawing with Part Orientation  
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical  
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.  
8 of 12  
Rev A11 DS070327  
NBB-310  
P1dB versus Frequency at 25°C  
POUT/Gain versus PIN at 6 GHz  
20.0  
15.0  
10.0  
5.0  
20.0  
18.0  
16.0  
14.0  
12.0  
10.0  
8.0  
6.0  
4.0  
2.0  
Pout (dBm)  
Gain (dB)  
0.0  
0.0  
-2.0  
1.0  
3.0  
5.0  
7.0  
9.0  
11.0  
13.0  
15.0  
-14.0  
-9.0  
-4.0  
1.0  
6.0  
Frequency (GHz)  
PIN (dBm)  
Third Order Intercept versus Frequency at 25°C  
POUT/Gain versus PIN at 14 GHz  
18.0  
16.0  
14.0  
12.0  
10.0  
8.0  
30.0  
25.0  
20.0  
15.0  
10.0  
5.0  
6.0  
4.0  
Pout (dBm)  
Gain (dB)  
2.0  
0.0  
0.0  
-15.0  
-10.0  
-5.0  
0.0  
5.0  
10.0  
1.0  
3.0  
5.0  
7.0  
9.0  
11.0  
13.0  
15.0  
Frequency (GHz)  
PIN (dBm)  
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical  
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.  
Rev A11 DS070327  
9 of 12  
NBB-310  
Note: The s-parameter gain results shown below include device performance as well as evaluation board and connector loss  
variations. The insertion losses of the evaluation board and connectors are as follows:  
1GHz to 4GHz=-0.06dB  
5GHz to 9GHz=-0.22dB  
10GHz to 14GHz=-0.50dB  
15GHz to 20GHz=-1.08dB  
S11 versus Frequency, Over Temperature  
S12 versus Frequency, Over Temperature  
0.0  
-10.0  
-20.0  
-30.0  
-40.0  
-50.0  
-60.0  
0.0  
-2.0  
+25 C  
-40 C  
+85 C  
-4.0  
-6.0  
-8.0  
-10.0  
-12.0  
-14.0  
-16.0  
-18.0  
-20.0  
+25 C  
-40 C  
+85 C  
0.0  
2.0  
4.0  
6.0  
8.0  
10.0  
12.0  
14.0  
2.0  
4.0  
6.0  
8.0  
10.0  
12.0  
14.0  
Frequency (GHz)  
Frequency (GHz)  
S21 versus Frequency, Over Temperature  
S22 versus Frequency, Over Temperature  
16.0  
14.0  
12.0  
10.0  
8.0  
0.0  
-5.0  
-10.0  
-15.0  
-20.0  
-25.0  
-30.0  
-35.0  
-40.0  
-45.0  
-50.0  
6.0  
4.0  
+25 C  
-40 C  
+85 C  
+25 C  
-40 C  
+85 C  
2.0  
0.0  
0.0  
2.0  
4.0  
6.0  
8.0  
10.0  
12.0  
14.0  
0.0  
2.0  
4.0  
6.0  
8.0  
10.0  
12.0  
14.0  
Frequency (GHz)  
Frequency (GHz)  
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical  
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.  
10 of 12  
Rev A11 DS070327  
NBB-310  
RoHS* Banned Material Content  
RoHS Compliant:  
Yes  
0.019  
0439  
-
Package total weight in grams (g):  
Compliance Date Code:  
Bill of Materials Revision:  
Pb Free Category:  
e3  
Parts Per Million (PPM)  
Bill of Materials  
Pb  
0
Cd  
0
Hg  
0
Cr VI  
PBB  
PBDE  
Die  
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
Molding Compound  
Lead Frame  
Die Attach Epoxy  
Wire  
0
0
0
0
0
0
0
0
0
0
0
0
Solder Plating  
0
0
0
This RoHS banned material content declaration was prepared solely on information, including analytical  
data, provided to RFMD by its suppliers, and applies to the Bill of Materials (BOM) revision noted  
* DIRECTIVE 2002/95/EC OF THE EUROPEAN PARLIAMENT AND OF THE COUNCIL of 27 January 2003 on the restriction of the  
use of certain hazardous substances in electrical and electronic equipment  
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical  
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.  
Rev A11 DS070327  
11 of 12  
NBB-310  
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical  
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.  
12 of 12  
Rev A11 DS070327  

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