HM62V16256CLTTI-7 [RENESAS]
Wide Temperature Range Version 4 M SRAM (256-kword ´ 16-bit); 宽温度范围版本的4M SRAM （ 256千字“ 16位）
| 型号： | HM62V16256CLTTI-7 |
| 厂家： | 
RENESAS TECHNOLOGY CORP |
| 描述： | Wide Temperature Range Version 4 M SRAM (256-kword ´ 16-bit) |
| 文件： | 总20页 (文件大小：100K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
To all our customers
Regarding the change of names mentioned in the document, such as Hitachi
Electric and Hitachi XX, to Renesas Technology Corp.
The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas
Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.)
Accordingly, although Hitachi, Hitachi, Ltd., Hitachi Semiconductors, and other Hitachi brand
names are mentioned in the document, these names have in fact all been changed to Renesas
Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and
corporate statement, no changes whatsoever have been made to the contents of the document, and
these changes do not constitute any alteration to the contents of the document itself.
Renesas Technology Home Page: http://www.renesas.com
Renesas Technology Corp.
Customer Support Dept.
April 1, 2003
Cautions
Keep safety first in your circuit designs!
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and more reliable, but there is always the possibility that trouble may occur with them. Trouble with
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Remember to give due consideration to safety when making your circuit designs, with appropriate
measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or
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contained therein.
HM62V16256CI Series
Wide Temperature Range Version
4 M SRAM (256-kword × 16-bit)
ADE-203-1230C (Z)
Rev. 3.0
Jul. 23, 2001
Description
The Hitachi HM62V16256CI Series is 4-Mbit static RAM organized 262,144-word × 16-bit.
HM62V16256CI Series has realized higher density, higher performance and low power consumption by
employing CMOS process technology (6-transistor memory cell). It offers low power standby power
dissipation; therefore, it is suitable for battery backup systems. It is packaged in standard 44-pin plastic
TSOPII.
Features
•
•
•
Single 2.5 V and 3.0 V supply: 2.2 V to 3.6 V
Fast access time: 70 ns (max)
Power dissipation:
Active: 5.0 mW/MHz (typ)(VCC = 2.5 V)
: 6.0 mW/MHz (typ) (VCC = 3.0 V)
Standby: 2 µW (typ) (VCC = 2.5 V)
: 2.4 µW (typ) (VCC = 3.0 V)
Completely static memory.
•
No clock or timing strobe required
Equal access and cycle times
Common data input and output.
Three state output
•
•
•
•
Battery backup operation.
2 chip selection for battery backup
Temperature range: –40 to +85°C
HM62V16256CI Series
Ordering Information
Type No.
Access time
70 ns
Package
HM62V16256CLTTI-7
400-mil 44-pin plastic TSOPII (normal-bend type) (TTP-44DB)
2
HM62V16256CI Series
Pin Arrangement
44-pin TSOP
44
1
A5
A4
A3
2
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
A6
3
A7
A2
4
OE
UB
LB
A1
5
A0
6
CS1
I/O0
I/O1
I/O2
I/O3
VCC
VSS
I/O4
I/O5
I/O6
I/O7
WE
A17
A16
A15
A14
A13
7
I/O15
I/O14
I/O13
I/O12
VSS
VCC
I/O11
I/O10
I/O9
I/O8
CS2
A8
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
A9
A10
A11
A12
(Top view)
Pin Description
Pin name
A0 to A17
I/O0 to I/O15
CS1
Function
Address input
Data input/output
Chip select 1
Chip select 2
Write enable
CS2
WE
OE
Output enable
Lower byte select
Upper byte select
Power supply
Ground
LB
UB
VCC
VSS
3
HM62V16256CI Series
Block Diagram
LSB
A12
V CC
V SS
A11
A10
A9
•
•
•
•
•
A8
Memory matrix
2,048 x 2,048
Row
decoder
A13
A14
A15
A16
A17
MSB
A7
I/O0
•
•
•
•
Column I/O
Input
data
Column decoder
control
I/O15
LSB
MSB
A4 A3 A2 A1 A5 A6 A0
•
•
CS2
CS1
LB
Control logic
UB
WE
OE
4
HM62V16256CI Series
Operation Table
CS1 CS2 WE
OE
×
UB
×
LB
×
I/O0 to I/O7
High-Z
High-Z
High-Z
Dout
I/O8 to I/O15
Operation
Standby
H
×
×
High-Z
High-Z
High-Z
Dout
×
L
×
×
×
×
Standby
×
L
L
L
L
L
L
L
×
×
×
H
L
H
L
Standby
H
H
H
H
H
H
H
H
H
H
L
L
Read
L
H
L
L
Dout
High-Z
Dout
Lower byte read
Upper byte read
Write
L
H
L
High-Z
Din
×
L
Din
L
×
H
L
L
Din
High-Z
Din
Lower byte write
Upper byte write
Output disable
L
×
H
×
High-Z
High-Z
H
H
×
High-Z
Note: H: VIH, L: VIL, ×: VIH or VIL
Absolute Maximum Ratings
Parameter
Symbol
VCC
Value
–0.5 to + 4.6
Unit
Power supply voltage relative to VSS
V
Terminal voltage on any pin relative to VSS
Power dissipation
VT
–0.5*1 to VCC + 0.3*2
V
PT
1.0
W
°C
°C
Storage temperature range
Tstg
Tbias
–55 to +125
–40 to +85
Storage temperature range under bias
Notes: 1. VT min: –3.0 V for pulse half-width ≤ 30 ns.
2. Maximum voltage is +4.6 V.
DC Operating Conditions
Parameter
Symbol Min
Typ
Max
3.6
Unit
Note
Supply voltage
VCC
VSS
2.2
0
2.5/3.0
0
V
0
V
Input high voltage
Input low voltage
VCC = 2.2 V to 2.7 V VIH
VCC = 2.7 V to 3.6 V VIH
VCC = 2.2 V to 2.7 V VIL
VCC = 2.7 V to 3.6 V VIL
2.0
2.2
–0.2
–0.3
–40
—
VCC + 0.3
VCC + 0.3
0.4
V
—
V
—
V
1
1
—
0.6
V
Ambient temperature range
Ta
—
85
°C
Note: 1. VIL min: –3.0 V for pulse half-width ≤ 30 ns.
5
HM62V16256CI Series
DC Characteristics
Parameter
Symbol Min
Typ*1 Max
Unit Test conditions
Input leakage current
Output leakage current
|ILI|
—
—
—
—
1
1
µA
µA
Vin = VSS to VCC
|ILO|
CS1 = VIH or CS2 = VIL or
OE = VIH or WE = VIL or
LB = UB = V ,
IH
VI/O = VSS to VCC
Operating current
ICC
—
—
5
7
20
25
mA
mA
CS1 = VIL, CS2 = VIH,
Others = VIH/VIL, II/O = 0 mA
Average operating current
ICC1
Min. cycle, duty = 100%,
II/O = 0 mA, CS1 = VIL, CS2 = VIH,
Others = VIH/VIL
ICC2
—
2
5
mA
Cycle time = 1 µs, duty = 100%,
II/O = 0 mA, CS1 ≤ 0.2 V,
CS2 ≥ VCC – 0.2 V
VIH ≥ VCC – 0.2 V, VIL ≤ 0.2 V
Standby current
Standby current
ISB
—
—
0.1
0.8
0.3
20
mA
CS2 = VIL
2
ISB1
*
µA
0 V ≤ Vin
(1) 0 V ≤ CS2 ≤ 0.2 V or
(2) CS1 ≥ VCC – 0.2 V,
CS2 ≥ VCC – 0.2 V or
(3) LB = UB ≥ VCC – 0.2 V
CS2 ≥ VCC – 0.2 V
CS1 ≤ 0.2 V
Output high VCC =2.2 V to 2.7 V VOH
voltage
2.0
2.4
—
—
—
V
IOH = –0.5 mA
VCC =2.7 V to 3.6 V VOH
VCC =2.2 V to 3.6 V VOH
—
V
V
V
IOH = –1 mA
IOH = –100 µA
IOL = 0.5 mA
VCC – 0.2—
—
Output low
voltage
VCC =2.2 V to 2.7 V VOL
—
—
0.4
VCC =2.7 V to 3.6 V VOL
VCC =2.2 V to 3.6 V VOL
—
—
—
—
0.4
0.2
V
V
IOL = 2 mA
IOL = 100 µA
Notes: 1. Typical values are at VCC = 2.5 V/3.0 V, Ta = +25°C and not guaranteed.
2. This characteristic is guaranteed only for L-version.
Capacitance (Ta = +25°C, f = 1.0 MHz)
Parameter
Symbol
Cin
Min
—
Typ
—
Max
8
Unit
pF
Test conditions Note
Input capacitance
Input/output capacitance
Vin = 0 V
VI/O = 0 V
1
1
CI/O
—
—
10
pF
Note: 1. This parameter is sampled and not 100% tested.
6
HM62V16256CI Series
AC Characteristics (Ta = –40 to +85°C, VCC = 2.2 V to 3.6 V, unless otherwise noted.)
Test Conditions
•
Input pulse levels: VIL = 0.4 V, VIH = 2.2 V (VCC = 2.2 V to 2.7 V)
: VIL = 0.4 V, VIH = 2.4 V (VCC = 2.7 V to 3.6 V)
Input rise and fall time: 5 ns
•
•
Input/output timing reference levels: 1.1 V (VCC = 2.2 V to 2.7 V)
: 1.4 V (VCC = 2.7 V to 3.6 V)
•
Output load: See figures (Including scope and jig)
VTM
1.4 V
R1
RL=500 Ω
Dout
Dout
R1 = 3070 Ω
30pF
R2
R2 = 3150 Ω
50pF
VTM = 2.3 V
Output load (A)
(VCC = 2.2 V to 2.7 V)
Output load (B)
(VCC = 2.7 V to 3.6 V)
7
HM62V16256CI Series
Read Cycle
HM62V16256CI
-7
Parameter
Symbol
tRC
Min
70
—
—
—
—
10
—
10
10
5
Max
—
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Notes
Read cycle time
Address access time
Chip select access time
tAA
70
70
70
40
—
tACS1
tACS2
tOE
Output enable to output valid
Output hold from address change
LB, UB access time
tOH
tBA
70
—
Chip select to output in low-Z
tCLZ1
tCLZ2
tBLZ
2, 3
—
2, 3
LB, UB enable to low-z
—
2, 3
Output enable to output in low-Z
Chip deselect to output in high-Z
tOLZ
5
—
2, 3
tCHZ1
tCHZ2
tBHZ
0
25
25
25
25
1, 2, 3
1, 2, 3
1, 2, 3
1, 2, 3
0
LB, UB disable to high-Z
0
Output disable to output in high-Z
tOHZ
0
8
HM62V16256CI Series
Write Cycle
HM62V16256CI
-7
Min
70
60
60
50
55
0
Parameter
Symbol
tWC
Max
—
—
—
—
—
—
—
—
—
—
25
25
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Notes
Write cycle time
Address valid to end of write
Chip selection to end of write
Write pulse width
tAW
tCW
5
4
tWP
LB, UB valid to end of write
Address setup time
tBW
tAS
6
7
Write recovery time
tWR
0
Data to write time overlap
Data hold from write time
Output active from end of write
Output disable to output in High-Z
Write to output in high-Z
tDW
30
0
tDH
tOW
5
2
tOHZ
tWHZ
0
1, 2
1, 2
0
Notes: 1. tCHZ, tOHZ, tWHZ and tBHZ are defined as the time at which the outputs achieve the open circuit
conditions and are not referred to output voltage levels.
2. This parameter is sampled and not 100% tested.
3. At any given temperature and voltage condition, tHZ max is less than tLZ min both for a given device
and from device to device.
4. A write occures during the overlap of a low CS1, a high CS2, a low WE and a low LB or a low UB.
A write begins at the latest transition among CS1 going low, CS2 going high, WE going low and LB
going low or UB going low. A write ends at the earliest transition among CS1 going high, CS2
going low, WE going high and LB going high or UB going high. tWP is measured from the beginning
of write to the end of write.
5. tCW is measured from the later of CS1 going low or CS2 going high to the end of write.
6. tAS is measured from the address valid to the beginning of write.
7. tWR is measured from the earliest of CS1 or WE going high or CS2 going low to the end of write
cycle.
9
HM62V16256CI Series
Timing Waveform
Read Cycle
tRC
Address
Valid address
tAA
tACS1
CS1
2, 3
2, 3
1, 2, 3
tCLZ1
*
tCHZ1
*
CS2
tACS2
tCLZ2
1, 2, 3
*
tCHZ2
*
1, 2, 3
tBHZ
*
tBA
LB, UB
2, 3
tBLZ
*
1, 2, 3
tOHZ
*
tOE
OE
2, 3
tOLZ
*
tOH
High impedance
Dout
Valid data
10
HM62V16256CI Series
Write Cycle (1) (WE Clock)
tWC
Valid address
Address
7
tWR
*
5
5
tCW
*
CS1
tCW
*
CS2
tBW
LB, UB
tAW
4
tWP
*
6
WE
tAS*
tDW
Valid data
tDH
Din
1, 2
tWHZ
*
2
tOW
*
High impedance
Dout
11
HM62V16256CI Series
Write Cycle (2) (CS Clock, OE= VIH)
tWC
Valid address
tAW
Address
6
7
5
5
tAS
*
tWR*
tCW
*
CS1
tCW
*
CS2
tBW
LB, UB
4
tWP
*
WE
tDW
Valid data
tDH
Din
High impedance
Dout
12
HM62V16256CI Series
Write Cycle (3) (LB, UB Clock, OE = VIH)
tWC
Valid address
tAW
Address
5
5
7
tCW
*
tWR
*
CS1
tCW
*
CS2
6
tBW
tAS
*
LB, UB
4
tWP
*
WE
tDW
Valid data
tDH
Din
High impedance
Dout
13
HM62V16256CI Series
Low VCC Data Retention Characteristics (Ta = –40 to +85°C)
Parameter
Symbol
Min
Typ*3
Max
Unit
Test conditions*2
VCC for data retention
VDR
2.0
—
3.6
V
Vin ≥ 0V
(1) 0 V ≤ CS2 ≤ 0.2 V or
(2) CS2 ≥ VCC – 0.2 V,
CS1 ≥ VCC – 0.2 V or
(3) LB = UB ≥ VCC – 0.2 V,
CS2 ≥ VCC – 0.2 V,
CS1 ≤ 0.2 V
1
Data retention current
ICCDR
*
—
0.8
20
µA
VCC = 3.0 V, Vin ≥ 0V
(1) 0 V ≤ CS2 ≤ 0.2 V or
(2) CS2 ≥ VCC – 0.2 V,
CS1 ≥ VCC – 0.2 V or
(3) LB = UB ≥ VCC – 0.2 V,
CS2 ≥ VCC – 0.2 V,
CS1 ≤ 0.2 V
Chip deselect to data
retention time
tCDR
tR
0
—
—
—
—
ns
ns
See retention waveform
Operation recovery time
tRC*4
Notes: 1. This characteristic is guaranteed only for L-version, 10 µA max. at Ta = –40 to +40°C.
2. CS2 controls address buffer, WE buffer, CS1 buffer, OE buffer, LB, UB buffer and Din buffer. If
CS2 controls data retention mode, Vin levels (address, WE, OE, CS1, LB, UB, I/O) can be in the
high impedance state. If CS1 controls data retention mode, CS2 must be CS2 ≥ VCC – 0.2 V or 0 V
≤ CS2 ≤ 0.2 V. The other input levels (address, WE, OE, LB, UB, I/O) can be in the high
impedance state.
3. Typical values are at VCC = 3.0 V, Ta = +25˚C and not guaranteed.
4. tRC = read cycle time.
14
HM62V16256CI Series
Low VCC Data Retention Timing Waveform (1) (CS1 Controlled) (VCC = 2.2 V to 2.7 V)
Data retention mode
tR
tCDR
VCC
2.2 V
VDR
2.0 V
CS1
0 V
≥
CS1 VCC – 0.2 V
Low VCC Data Retention Timing Waveform (2) (CS1 Controlled) (VCC = 2.7 V to 3.6 V)
Data retention mode
tR
tCDR
VCC
2.7 V
2.2 V
VDR
CS
0 V
≥
CS VCC – 0.2 V
Low VCC Data Retention Timing Waveform (3) (CS2 Controlled) (VCC = 2.2 V to 2.7 V)
tCDR
Data retention mode
tR
VCC
2.2 V
CS2
VDR
0.4 V
0 V
<
<
0 V CS2 0.2 V
15
HM62V16256CI Series
Low VCC Data Retention Timing Waveform (4) (CS2 Controlled) (VCC = 2.7 V to 3.6 V)
tCDR
Data retention mode
tR
VCC
2.7 V
CS2
VDR
0.6 V
0 V
<
<
0 V CS2 0.2 V
Low VCC Data Retention Timing Waveform (5) (LB, UB Controlled) (VCC = 2.2 V to 2.7 V)
Data retention mode
tR
tCDR
VCC
2.2 V
VDR
2.0 V
LB, UB
0 V
≥
LB, UB VCC – 0.2 V
Low VCC Data Retention Timing Waveform (6) (LB, UB Controlled) (VCC = 2.7 V to 3.6 V)
Data retention mode
tR
tCDR
VCC
2.7 V
2.2 V
VDR
LB, UB
0 V
≥
LB, UB VCC – 0.2 V
16
HM62V16256CI Series
Package Dimensions
HM62V16256CLTTI Series (TTP-44DB)
As of January, 2001
Unit: mm
18.41
18.81 Max
44
23
22
1
0.80
0.13
0.80
*0.30 ± 0.10
0.25 ± 0.05
M
11.76 ± 0.20
1.005 Max
0° – 5°
0.50 ± 0.10
0.10
Hitachi Code
TTP-44DB
JEDEC
EIAJ
Mass (reference value)
—
—
0.43 g
*Dimension including the plating thickness
Base material dimension
17
HM62V16256CI Series
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including intellectual
property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of
bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic,
safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for
maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and
other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the
guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or
failure modes in semiconductor devices and employ systemic measures such as fail-safes, so that the
equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage
due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor
products.
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Semiconductor & Integrated Circuits
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
Tel: (03) 3270-2111 Fax: (03) 3270-5109
URL
http://www.hitachisemiconductor.com/
For further information write to:
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Tel : <852>-(2)-735-9218
Fax : <852>-(2)-730-0281
URL : http://semiconductor.hitachi.com.hk
Fax: <44> (1628) 585200
Hitachi Asia Ltd.
(Taipei Branch Office)
4/F, No. 167, Tun Hwa North Road
Hung-Kuo Building
Hitachi Europe GmbH
Electronic Components Group
Dornacher Straße 3
D-85622 Feldkirchen
Postfach 201,D-85619 Feldkirchen
Germany
Tel: <49> (89) 9 9180-0
Fax: <49> (89) 9 29 30 00
Taipei (105), Taiwan
Tel : <886>-(2)-2718-3666
Fax : <886>-(2)-2718-8180
Telex : 23222 HAS-TP
URL : http://www.hitachi.com.tw
Copyright © Hitachi, Ltd., 2001. All rights reserved. Printed in Japan.
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相关型号：
HM62V16258CLTT-5SL
Standard SRAM, 256KX16, 55ns, CMOS, PDSO44, 0.400 INCH, PLASTIC, TSOP2-44
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