HD74CBT3253T [RENESAS]

CBT/FST/QS/5C/B SERIES, DUAL 1 LINE TO 4 LINE MULTIPLEXER AND DEMUX/DECODER, TRUE OUTPUT, PDSO16, TTP-16;
HD74CBT3253T
型号: HD74CBT3253T
厂家: RENESAS TECHNOLOGY CORP    RENESAS TECHNOLOGY CORP
描述:

CBT/FST/QS/5C/B SERIES, DUAL 1 LINE TO 4 LINE MULTIPLEXER AND DEMUX/DECODER, TRUE OUTPUT, PDSO16, TTP-16

解复用器 逻辑集成电路 光电二极管
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HD74CBT3253  
Dual 1-of-4 FET Multiplexer / Demultiplexer  
ADE-205-616A (Z)  
Rev.1  
May 2001  
Description  
The HD74CBT3253 is a dual 1-of-4 high-speed TTL-compatible emultiplexer. The  
low on-state resistance of the switch allows connections to be mn delay.  
1OE, 2OE, S0, and S1 select the appropriate B output for t
Features  
Minimal propagation delay through the sw
5 switch connection between two po
TTL-compatible input levels.  
Ultra low quiescent power.  
-Ideally suited for notebook
HD74CBT3253  
Function Table  
Inputs  
1OE  
X
2OE  
H
S1  
X
X
L
S0  
X
X
L
Function  
Disconnect 1A and 2A  
Disconnect 1A and 2A  
1A to 1B1 and 2A to 2B1  
1A to 1B2 and 2A to 2B2  
1A to 1B3 and 2A to 2B3  
1A to 1B4 and 2A to 2B4  
H
X
L
L
L
L
L
H
L
L
L
H
H
L
L
H
H:  
L:  
High level  
Low level  
Immaterial  
X:  
Pin Arrangement  
1
2
8
15  
14  
13  
12  
11  
10  
9
1OE  
S1  
VCC  
2OE  
S0  
1B4  
2B4  
2B3  
2B2  
2B1  
2A  
GN
(Top view)  
Rev.1, May 2001, page 2 of 2  
HD74CBT3253  
Absolute Maximum Ratings  
Item  
Symbol  
Ratings  
0.5 to 7.0  
0.5 to 7.0  
50  
Unit  
V
Conditions  
Supply voltage range  
Input voltage range *1  
Input clamp current  
Continuous output current  
Continuous current through  
VCC  
VI  
V
IIK  
mA  
mA  
mA  
VI < 0  
IO  
128  
VO = 0 to VCC  
ICC or IGND  
100  
VCC or GND  
Maximum power dissipation  
at Ta = 25°C (in still air) *2  
PT  
500  
mW  
TSSOP  
Storage temperature  
Tstg  
65 to 150  
Notes:  
The absolute maximum ratings are values which must not iceeded, and  
furthermore, no two of which may be realized at the sam
1. The input and output voltage ratings may be exceedet clamp-current  
ratings are observed.  
2. The maximum package power dissipation was perature of 150°C.  
Recommended Operating Conditions  
Item  
Sym
.5  
5.5  
5
Unit  
V
Conditions  
Supply voltage range  
Input voltage range  
Output voltage range  
Input transition rise or fall
Operating free-air tem
V
V
ns / V  
°C  
VCC = 4.5 to 5.5 V  
40  
85  
Note: Unused or h or low.  
Rev.1, May 2001, page 3 of 3  
HD74CBT3253  
Block Diagram  
6
7
1A  
1B1  
1B2  
1B3  
1B4  
2B1  
2B2  
2B3  
2B4  
5
4
3
9
10  
11  
12  
13  
2A  
14  
S0  
2
S1  
1
1OE  
15  
2OE  
Rev.1, May 2001, page 4 of 4  
HD74CBT3253  
DC Electrical Characteristics  
(Ta = 40 to 85°C)  
Item  
Symbol  
VCC (V)  
Min  
Typ*1  
Max  
1.2  
Unit  
V
Test conditions  
Clamp diode voltage VIK  
4.5  
IIN = 18 mA  
Input voltage  
VIH  
VIL  
4.0 to 5.5 2.0  
V
4.0 to 5.5  
4.5  
0.8  
7
On-state switch  
resistance *2  
RON  
5
VIN = 0 V,  
IIN = 64 mA  
4.5  
4.5  
5
7
VIN = 0 V,  
IIN = 30 mA  
10  
15  
VIN = 2.4 V,  
= 15 mA  
Input current  
IIN  
0 to 5.5  
5.5  
5.5 V or GND  
Off-state leakage  
current  
IOZ  
VCC  
Quiescent supply  
current  
ICC  
5.5  
5.5  
IN = VCC or GND,  
IO = 0 mA  
Increase in ICC  
per input *3  
ICC  
One input at 3.4 V,  
other inputs at VCC or  
GND  
Notes:  
For condition shown as Min oes under recommended operating  
conditions.  
1. All typical values are at ed), Ta = 25°C.  
2. Measured by the voterminals at the indicated current through the  
switch. On-state lower voltage of the two (A or B) terminals.  
3. This is the incinput that is at the specified TTL voltage level  
rather than
Capacitance  
(Ta = 25°C)  
Item  
bol VCC (V)  
Min  
Typ  
Max  
Unit  
Test conditions  
Control input  
capacitance  
CIN  
5.0  
3.5  
pF  
VIN = 0 or 3 V  
Input / output  
capacitance  
A port CI/O (OFF)  
B port  
5.0  
5.0  
15  
5
pF  
VO = 0 or 3 V  
OE = VCC  
Note: This parameter is determined by device characterization is not production tested.  
Rev.1, May 2001, page 5 of 5  
HD74CBT3253  
Switching Characteristics  
(Ta = 40 to 85°C)  
VCC = 4.0 V  
Test  
conditions  
FROM  
(Input)  
TO  
(Output)  
Item  
Symbol  
Min  
Max  
Unit  
Propagation delay  
time *1  
tPLH  
tPHL  
0.35  
ns  
CL = 50 pF  
RL = 500 Ω  
A or B  
B or A  
Propagation delay  
time  
tPLH  
tPHL  
6.6  
7.1  
ns  
ns  
CL = 50 pF  
RL = 500 Ω  
S
S
A
B
Enable time  
tZH  
tZL  
CL = 50
RL =
7.3  
7.9  
A or B  
B
Disable time  
tHZ  
tLZ  
ns  
7.3  
A or B  
VCC = 5.0 0.5 V  
ditions  
FROM  
(Input)  
TO  
(Output)  
Item  
Symbol  
Min  
Propagation delay  
time *1  
tPLH  
tPHL  
CL = 50 pF  
RL = 500 Ω  
A or B  
B or A  
Propagation delay  
time  
tPLH  
tPH
ns  
CL = 50 pF  
RL = 500 Ω  
S
S
A
B
Enable time  
CL = 50 pF  
RL = 500 Ω  
6.4  
7.4  
OE  
S
A or B  
B
Disable time  
ns  
CL = 50 pF  
RL = 500 Ω  
.3  
7.0  
OE  
A or B  
Note: 1. The propagatiis the calculated RC time constant of the typical on-state resistance of the  
switch and the spcified load capacitance, when driven by an ideal voltage source (zero output  
impedance).  
Rev.1, May 2001, page 6 of 6  
HD74CBT3253  
Test Circuit  
See under table  
OPEN  
GND  
S1  
500 Ω  
*1  
CL = 50 pF  
500 Ω  
Load circuit for outputs  
Symbol  
tPLH/ tPHL  
tZH / tHZ  
tZL / tL
S1  
OP
Note: 1. CL ince.  
Rev.1, May 2001, page 7 of 7  
HD74CBT3253  
Waveforms – 1  
tr  
tf  
3 V  
90 %  
1.5 V  
90 %  
1.5 V  
Input  
10 %  
10 %  
tPHL  
GND  
VOH  
tPLH  
1.5 V  
Output  
VOL  
Waveforms – 2  
tf  
3 V  
90 %  
1.5 V  
Output  
Control  
10
GND  
3.5 V  
tLZ  
Waveform - A  
Waveform - B  
VOL + 0.3 V  
VOH - 0.3 V  
VOL  
VOH  
tHZ  
1.5 V  
GND  
Notes: 1. All input pulses are supplied by generators having the following characteristics :  
PRR 10 MHz, ZO = 50 , tr 2.5 ns, tf 2.5 ns.  
2. Waveform - A is for an output with internal conditions such that the output is low except  
when disabled by the output control.  
3. Waveform - B is for an output with internal conditions such that the output is high except  
when disabled by the output control.  
4. The output are measured one at a time with one transition per measurement.  
Rev.1, May 2001, page 8 of 8  
HD74CBT3253  
Package Dimensions  
As of January, 2001  
Unit: mm  
5.00  
5.30 Max  
16  
9
1
8
0.65  
0.13 M  
0.65 Max  
1.0  
+ 0.08  
*0.22  
0.07  
0.20 0.06  
6.40 0.20  
0.10  
TTP-16DA  
*Dimension including the plating thickness  
Base material dimension  
ference value)  
0.05 g  
Rev.1, May 2001, page 9 of 9  
HD74CBT3253  
Disclaimer  
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,  
copyright, trademark, or other intellectual property rights for information contained in this document.  
Hitachi bears no responsibility for problems that may arise with third party’s rights, including  
intellectual property rights, in connection with use of the information contained in this document.  
2. Products and product specifications may be subject to change without notice. Confirm that you have  
received the latest product standards or specifications before final design, purchase or use.  
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,  
contact Hitachi’s sales office before using the product in an application that demands especially high  
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk  
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,  
traffic, safety equipment or medical equipment for life support.  
4. Design your application so that the product is used within the ranges by Hitachi particularly  
for maximum rating, operating supply voltage range, heat radiationstallation  
conditions and other characteristics. Hitachi bears no responsige when used  
beyond the guaranteed ranges. Even within the guaranteed seeable  
failure rates or failure modes in semiconductor devices auch as fail-  
safes, so that the equipment incorporating Hitachi prory, fire or other  
consequential damage due to operation of the Hita
5. This product is not designed to be radiation resi
6. No one is permitted to reproduce or duplicart of this document without  
written approval from Hitachi.  
7. Contact Hitachi’s sales office for any ent or Hitachi semiconductor  
products.  
Sales Offices  
Hitachi, Ltd.  
Semiconductor &
Nippon Bldg., 2-6-2, 0-0004, Japan  
Tel: (03) 3270-2111 F
URL  
NorthAmeric
Europe  
Asia  
conductor.hitachi.com/  
w.hitachi-eu.com/hel/ecg  
icapac.hitachi-asia.com  
Japan  
/www.hitachi.co.jp/Sicd/indx.htm  
For further information write to:  
Hitachi Semiconductor  
Hitachi Europe Ltd.  
Hitachi Asia Ltd.  
Hitachi Asia (Hong Kong) Ltd.  
Group III (Electronic Components)  
7/F., North Tower  
(America) Inc.  
Electronic Components Group  
Hitachi Tower  
179 East Tasman Drive Whitebrook Park  
San Jose,CA 95134  
Tel: <1> (408) 433-1990 Maidenhead  
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Fax : <65>-538-6933/538-3877  
URL : http://www.hitachi.com.sg  
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Fax : <852>-(2)-730-0281  
URL : http://semiconductor.hitachi.com.hk  
Fax: <44> (1628) 585200  
Hitachi Asia Ltd.  
(Taipei Branch Office)  
4/F, No. 167, Tun Hwa North Road  
Hung-Kuo Building  
Taipei (105), Taiwan  
Tel : <886>-(2)-2718-3666  
Fax : <886>-(2)-2718-8180  
Telex : 23222 HAS-TP  
URL : http://www.hitachi.com.tw  
Hitachi Europe GmbH  
Electronic Components Group  
Dornacher Straße 3  
D-85622 Feldkirchen, Munich  
Germany  
Tel: <49> (89) 9 9180-0  
Fax: <49> (89) 9 29 30 00  
Copyright © Hitachi, Ltd., 2001. All rights reserved. Printed in Japan.  
Colophon 4.0  
Rev.1, May 2001, page 10 of 10  

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