HD74CBT3257 [HITACHI]

4-bit 1-of-2 FET Multiplexer / Demultiplexer; 4位1的- 2 FET多路复用器/多路解复用器
HD74CBT3257
型号: HD74CBT3257
厂家: HITACHI SEMICONDUCTOR    HITACHI SEMICONDUCTOR
描述:

4-bit 1-of-2 FET Multiplexer / Demultiplexer
4位1的- 2 FET多路复用器/多路解复用器

解复用器 逻辑集成电路 光电二极管
文件: 总11页 (文件大小:103K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
HD74CBT3257  
4-bit 1-of-2 FET Multiplexer / Demultiplexer  
ADE-205-624B (Z)  
Rev. 2  
Nov. 2001  
Description  
The HD74CBT3257 is a 4-bit 1-of-2 high-speed TTL-compatible FET multiplexer / demultiplexer. The  
low on-state resistance of the switch allows connections to be made with minimal propagation delay.  
Output enable (OE) and select control (S) inputs select the appropriate B1 and B2 outputs for the A-input  
data.  
Features  
Minimal propagation delay through the switch.  
5 switch connection between two ports.  
TTL-compatible input levels.  
Ultra low quiescent power.  
-Ideally suited for notebook applications.  
Package type  
Product code example: HD74CBT3257TELL  
Package type  
Package code  
Package suffix  
Taping code  
TSSOP-16pin  
TTP-16DA  
T
ELL(2000pcs / Reel)  
Notes: 1. As for the Pb-free package is attached the “V” to the end of package code.  
2. As for the Pb-free product is attached the “–E” to the end of product code.  
HD74CBT3257  
Function Table  
Inputs  
OE  
L
S
L
Function  
A port = B1 port  
A port = B2 port  
Disconnect  
L
H
X
H
H:  
L:  
High level  
Low level  
Immaterial  
X:  
Pin Arrangement  
1
2
3
4
5
6
7
8
16  
15  
14  
13  
12  
11  
10  
9
S
1B1  
1B2  
1A  
VCC  
OE  
4B1  
4B2  
4A  
2B1  
2B2  
2A  
3B1  
3B2  
3A  
GND  
(Top view)  
Rev.2, Nov. 2001, page 2 of 11  
HD74CBT3257  
Absolute Maximum Ratings  
Item  
Symbol  
Ratings  
0.5 to 7.0  
0.5 to 7.0  
50  
Unit  
V
Conditions  
Supply voltage range  
Input voltage range *1  
Input clamp current  
Continuous output current  
VCC  
VI  
V
IIK  
mA  
mA  
mA  
VI < 0  
IO  
128  
VO = 0 to VCC  
Continuous current through  
VCC or GND  
I
CC or IGND  
100  
Maximum power dissipation  
PT  
500  
mW  
TSSOP  
at Ta = 25°C (in still air) *2  
Storage temperature  
Tstg  
65 to 150  
°C  
Notes:  
The absolute maximum ratings are values which must not individually be exceeded, and  
furthermore, no two of which may be realized at the same time.  
1. The input and output voltage ratings may be exceeded even if the input and output clamp-current  
ratings are observed.  
2. The maximum package power dissipation was calculated using a junction temperature of 150°C.  
Recommended Operating Conditions  
Item  
Symbol  
VCC  
Min  
4.0  
0
Max  
5.5  
5.5  
5.5  
5
Unit  
V
Conditions  
Supply voltage range  
Input voltage range  
Output voltage range  
Input transition rise or fall rate  
Operating free-air temperature  
VI  
V
VI/O  
0
V
t / v  
Ta  
0
ns / V  
°C  
VCC = 4.5 to 5.5 V  
40  
85  
Note: Unused or floating inputs must be held high or low.  
Rev.2, Nov. 2001, page 3 of 11  
HD74CBT3257  
Block Diagram  
2
4
1A  
1B1  
3
5
1B2  
2B1  
7
2A  
6
2B2  
3B1  
11  
9
3A  
10  
14  
3B2  
4B1  
12  
4A  
13  
4B2  
1
S
15  
OE  
Rev.2, Nov. 2001, page 4 of 11  
HD74CBT3257  
DC Electrical Characteristics  
(Ta = 40 to 85°C)  
Item  
Symbol  
VCC (V)  
Min  
Typ*1  
Max  
1.2  
Unit  
V
Test conditions  
Clamp diode voltage VIK  
4.5  
IIN = 18 mA  
Input voltage  
VIH  
VIL  
4.0 to 5.5 2.0  
V
4.0 to 5.5  
4.0  
0.8  
20  
On-state switch  
resistance *2  
RON  
14  
VIN = 2.4 V,  
IIN = 15 mA  
Typ at VCC = 4.0 V  
4.5  
4.5  
4.5  
5
7
VIN = 0 V,  
IIN = 64 mA  
5
7
VIN = 0 V,  
IIN = 30 mA  
10  
15  
VIN = 2.4 V,  
IIN = 15 mA  
Input current  
IIN  
0 to 5.5  
5.5  
1.0  
1.0  
µA  
µA  
VIN = 5.5 V or GND  
Off-state leakage  
current  
IOZ  
0 A, B VCC  
Quiescent supply  
current  
ICC  
5.5  
5.5  
3
µA  
VIN = VCC or GND,  
IO = 0 mA  
Increase in ICC  
per input *3  
ICC  
2.5  
mA  
One input at 3.4 V,  
other inputs at VCC or  
GND  
Notes:  
For condition shown as Min or Max use the appropriate values under recommended operating  
conditions.  
1. All typical values are at VCC = 5 V (unless otherwise noted), Ta = 25°C.  
2. Measured by the voltage drop between the A and B terminals at the indicated current through the  
switch. On-state resistance is determined by the lower voltage of the two (A or B) terminals.  
3. This is the increase in supply current for each input that is at the specified TTL voltage level  
rather than VCC or GND.  
Capacitance  
(Ta = 25°C)  
Item  
Symbol VCC (V)  
Min  
Typ  
Max  
Unit  
Test conditions  
Control input  
capacitance  
CIN  
5.0  
3.5  
pF  
VIN = 0 or 3 V  
Input / output  
capacitance  
A port CI/O (OFF)  
B port  
5.0  
5.0  
9
5
pF  
VO = 0 or 3 V  
OE = VCC  
Note: This parameter is determined by device characterization is not production tested.  
Rev.2, Nov. 2001, page 5 of 11  
HD74CBT3257  
Switching Characteristics  
(Ta = 40 to 85°C)  
VCC = 4.0 V  
Test  
conditions  
FROM  
(Input)  
TO  
(Output)  
Item  
Symbol  
Min  
Max  
Unit  
Propagation delay  
time *1  
tPLH  
tPHL  
0.35  
ns  
CL = 50 pF  
RL = 500 Ω  
A or B  
B or A  
Propagation delay  
time  
tPLH  
tPHL  
5.5  
ns  
ns  
CL = 50 pF  
RL = 500 Ω  
S
A
Enable time  
tZH  
tZL  
5.7  
5.6  
5.2  
5.5  
5.2  
6.4  
CL = 50 pF  
RL = 500 Ω  
S
B
OE  
S
A or B  
B
Disable time  
tHZ  
ns  
CL = 50 pF  
RL = 500 Ω  
OE  
S
A or B  
B
tLZ  
OE  
A or B  
VCC = 5.0 0.5 V  
Test  
conditions  
FROM  
(Input)  
TO  
(Output)  
Item  
Symbol  
Min  
Max  
Unit  
Propagation delay  
time *1  
tPLH  
tPHL  
0.25  
ns  
CL = 50 pF  
RL = 500 Ω  
A or B  
B or A  
Propagation delay  
time  
tPLH  
tPHL  
1.6  
5.0  
ns  
ns  
CL = 50 pF  
RL = 500 Ω  
S
A
Enable time  
tZH  
tZL  
1.6  
1.8  
1.0  
2.2  
1.0  
2.2  
5.2  
5.1  
5.0  
5.5  
5.0  
6.8  
CL = 50 pF  
RL = 500 Ω  
S
B
OE  
S
A or B  
B
Disable time  
tHZ  
ns  
CL = 50 pF  
RL = 500 Ω  
OE  
S
A or B  
B
tLZ  
OE  
A or B  
Note: 1. The propagation delay is the calculated RC time constant of the typical on-state resistance of the  
switch and the specified load capacitance, when driven by an ideal voltage source (zero output  
impedance).  
Rev.2, Nov. 2001, page 6 of 11  
HD74CBT3257  
Test Circuit  
See under table  
OPEN  
GND  
S1  
500 Ω  
*1  
CL = 50 pF  
500 Ω  
Load circuit for outputs  
Symbol  
tPLH/ tPHL  
tZH / tHZ  
tZL / tLZ  
S1  
OPEN  
OPEN  
7 V  
Note: 1. CL includes probe and jig capacitance.  
Rev.2, Nov. 2001, page 7 of 11  
HD74CBT3257  
Waveforms – 1  
tr  
tf  
3 V  
90 %  
1.5 V  
90 %  
1.5 V  
Input  
10 %  
10 %  
tPHL  
GND  
VOH  
tPLH  
1.5 V  
1.5 V  
Output  
VOL  
Waveforms – 2  
tf  
tr  
3 V  
90 %  
90 %  
1.5 V  
1.5 V  
Output  
Control  
10 %  
tZL  
10 %  
GND  
3.5 V  
tLZ  
Waveform - A  
Waveform - B  
1.5 V  
VOL + 0.3 V  
VOH - 0.3 V  
VOL  
VOH  
tZH  
tHZ  
1.5 V  
GND  
Notes: 1. All input pulses are supplied by generators having the following characteristics :  
PRR 10 MHz, ZO = 50 , tr 2.5 ns, tf 2.5 ns.  
2. Waveform - A is for an output with internal conditions such that the output is low except  
when disabled by the output control.  
3. Waveform - B is for an output with internal conditions such that the output is high except  
when disabled by the output control.  
4. The output are measured one at a time with one transition per measurement.  
Rev.2, Nov. 2001, page 8 of 11  
HD74CBT3257  
Package Dimensions  
As of July, 2001  
Unit: mm  
5.00  
5.30 Max  
16  
9
1
8
0.65  
0.13 M  
0.65 Max  
1.0  
+ 0.08  
– 0.07  
*0.ꢀꢀ  
0.ꢀ0 0.06  
6.40 0.ꢀ0  
0˚ – 8˚  
0.50 0.10  
0.10  
Hitachi Code  
JEDEC  
TTP-16DA  
JEITA  
Mass (reference value)  
0.05 g  
*Dimension including the plating thickness  
Base material dimension  
Rev.2, Nov. 2001, page 9 of 11  
HD74CBT3257  
As of July, 2001  
Unit: mm  
5.00  
5.30 Max  
16  
9
1
8
0.65  
0.13 M  
0.65 Max  
1.0  
*
0.ꢀ0 0.05  
6.40 0.ꢀ0  
0˚ – 8˚  
0.50 0.10  
0.10  
Hitachi Code  
JEDEC  
TTP-16DAV  
JEITA  
*Pd plating  
Mass (reference value)  
0.05 g  
Rev.2, Nov. 2001, page 10 of 11  
HD74CBT3257  
Disclaimer  
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,  
copyright, trademark, or other intellectual property rights for information contained in this document.  
Hitachi bears no responsibility for problems that may arise with third party’s rights, including  
intellectual property rights, in connection with use of the information contained in this document.  
2. Products and product specifications may be subject to change without notice. Confirm that you have  
received the latest product standards or specifications before final design, purchase or use.  
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,  
contact Hitachi’s sales office before using the product in an application that demands especially high  
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk  
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,  
traffic, safety equipment or medical equipment for life support.  
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly  
for maximum rating, operating supply voltage range, heat radiation characteristics, installation  
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used  
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable  
failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-  
safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other  
consequential damage due to operation of the Hitachi product.  
5. This product is not designed to be radiation resistant.  
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without  
written approval from Hitachi.  
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor  
products.  
Sales Offices  
Hitachi, Ltd.  
Semiconductor & Integrated Circuits  
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan  
Tel: (03) 3270-2111 Fax: (03) 3270-5109  
URL  
http://www.hitachisemiconductor.com/  
For further information write to:  
Hitachi Semiconductor  
(America) Inc.  
Hitachi Europe Ltd.  
Hitachi Asia Ltd.  
Hitachi Asia (Hong Kong) Ltd.  
Group III (Electronic Components)  
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Electronic Components Group  
Hitachi Tower  
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Tel : <65>-538-6533/538-8577  
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Fax: <44> (1628) 585200  
Hitachi Asia Ltd.  
(Taipei Branch Office)  
4/F, No. 167, Tun Hwa North Road  
Hung-Kuo Building  
Taipei (105), Taiwan  
Tel : <886>-(2)-2718-3666  
Fax : <886>-(2)-2718-8180  
Telex : 23222 HAS-TP  
URL : http://www.hitachi.com.tw  
Hitachi Europe GmbH  
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Postfach 201, D-85619 Feldkirchen  
Germany  
Tel: <49> (89) 9 9180-0  
Fax: <49> (89) 9 29 30 00  
Copyright © Hitachi, Ltd., 2001. All rights reserved. Printed in Japan.  
Colophon 5.0  
Rev.2, Nov. 2001, page 11 of 11  

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