FX30KMJ-03-A8 [RENESAS]
High-Speed Switching Use Pch Power MOS FET; 高速开关使用P沟道功率MOS FET
| 型号： | FX30KMJ-03-A8 |
| 厂家： | 
RENESAS TECHNOLOGY CORP |
| 描述： | High-Speed Switching Use Pch Power MOS FET |
| 文件： | 总7页 (文件大小：204K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
FX30KMJ-03
High-Speed Switching Use
Pch Power MOS FET
REJ03G0260-0100
Rev.1.00
Aug.20.2004
Features
•
•
•
•
•
Drive voltage : 4 V
DSS : – 30 V
DS(ON) (max) : 61 mΩ
V
r
ID : – 30 A
Recovery Time of the Integrated Fast Recovery Diode (TYP.) : 50 ns
Outline
TO-220FN
rain
Source
1
Applications
Motor control, lamp contrnverters, etc.
Maximum Rati
(Tc = 25°C)
Parameter
Drain-source voltage
Gate-source voltage
Drain current
bol
VDSS
VGSS
ID
Ratings
–30
Unit
Conditions
V
V
VGS = 0 V
±20
VDS = 0 V
–30
A
Drain current (Pulsed)
Avalanche current (Pulsed)
Source current
IDM
–120
A
IDA
–30
A
L = 10 µH
IS
–30
A
Source current (Pulsed)
Maximum power dissipation
Channel temperature
Storage temperature
Isolation voltage
ISM
–120
A
PD
25
W
°C
°C
V
Tch
Tstg
Viso
– 55 to +150
– 55 to +150
2000
AC 1 minute,
Terminal to case
Mass
—
2.0
g
Typical value
Rev.1.00, Aug.20.2004, page 1 of 6
FX30KMJ-03
Electrical Characteristics
(Tch = 25°C)
Parameter
Drain-source breakdown voltage
Gate-source leakage current
Drain-source leakage current
Gate-source threshold voltage
Drain-source on-state resistance
Drain-source on-state resistance
Drain-source on-state voltage
Forward transfer admittance
Input capacitance
Symbol
V(BR)DSS
IGSS
Min.
–30
—
Typ.
—
Max.
—
Unit
V
Test conditions
ID = –1 mA, VGS = 0 V
VGS = ±20 V, VDS = 0 V
VDS = –30 V, VGS = 0 V
ID = –1 mA, VDS = –10 V
ID = –15 A, VGS = –10 V
ID = – 5 A, VGS = – 4 V
ID = –15 A, VGS = –10 V
ID = –15 A, VDS = –10 V
—
±0.1
–0.1
–2.3
61
µA
mA
V
IDSS
—
—
VGS(th)
rDS(ON)
rDS(ON)
VDS(ON)
| yfs |
Ciss
–1.3
—
–1.8
48
mΩ
mΩ
V
—
96
120
–0.92
—
—
–0.72
11.9
2460
410
170
20
—
S
—
—
pF
pF
pF
ns
VDS = –10 V, VGS = 0 V,
f = 1MHz
Output capacitance
Coss
Crss
td(on)
—
—
Reverse transfer capacitance
Turn-on delay time
—
—
—
—
VDD = –15 V, ID = –15 A,
VGS = –10 V,
Rise time
tr
—
84
—
s
RGEN = RGS = 50 Ω
Turn-off delay time
td(off)
—
123
60
—
Fall time
tf
—
—
Source-drain voltage
VSD
—
–1.0
—
–15 A, VGS = 0 V
el to case
Thermal resistance
Rth(ch-c)
trr
—
Reverse recovery time
—
5
15 A, dis/dt = 50 A/µs
Rev.1.00, Aug.20.2004, page 2 of 6
FX30KMJ-03
Performance Curves
Drain Power Dissipation Derating Curve
Maximum Safe Operating Area
–2
50
40
30
20
10
0
–102
–7
–5
tw = 10µs
–3
–2
100µs
–101
–7
–5
1ms
–3
–2
10ms
–100
–7
–5
DC
Tc = 25°C
Single Pulse
–3
–2
0
1
2
–2
–2 –3 –5–7
–10
–2 –3 –5–7
–10
–2 –3 –5–7
0
0
0
50
100
150
200
–10
Case Temperature Tc (°C)
Draiurce Voltage V
(V)
DS
Output Characteristics (Typical)
cs (Typical)
– 5V
–50
–40
–30
–20
–10
0
– 4
0
V
=
GS
–10V
V
–7V
– 8V
– 6V
– 4V
–5V
P
D
= 25W
Tc = 25°C
Pulse T
Tc = 25°C
Pulse Test
– 3V
–1.0
–2
0
–0.4
–0.8
–1.2
–1.6
–2.0
Drain-S
Drain-Source Voltage V
(V)
DS
Gate-Sal)
On-State Resistance vs.
Drain Current (Typical)
–5.0
–4.0
–3.0
–2.0
–1.0
0
200
160
120
80
Tc = 25°C
Pulse Test
Tc = 25°C
Pulse Test
I
D
= –50A
V
GS
= – 4V
–30A
–15A
–10V
40
0
0
1
2
–2 –3 –5 –7
–2 –3 –5–7
–2 –3 –5–7
–10
–2
–4
–6
–8
–10
–10–1
–10
–10
Gate-Source Voltage V
(V)
Drain Current I (A)
D
GS
Rev.1.00, Aug.20.2004, page 3 of 6
FX30KMJ-03
Forward Transfer Admittance vs.
Drain Current (Typical)
Transfer Characteristics (Typical)
Tc = 25°C
2
–50
–40
–30
–20
–10
0
V
= –10V
DS
Pulse Test
V
= –10V
DS
Pulse Test
102
7
5
4
3
125°C
75°C
2
Tc = 25°C
101
7
5
4
3
2
1
2
–2 –3 –5 –7
–2 –3 –5 –7
–10
0
–2
–4
–6
–8
–10
–100
–10
Gate-Source Voltage V
(V)
Drain Current I (A)
D
GS
Capacitance vs.
Drain-Source Voltage (Typical)
eristics (Typical)
2
Tch = 25°C
f = 1MHz
104
7
5
V
GS
= 0V
Ω
3
2
Ciss
td(off)
103
7
5
tr
Coss
Crss
3
2
102
7
5
td(on)
2
3
2
101
0
1
2
–100
–3 –5–7
–10
–2 –3 –5–7
–2 –3 –5 –7
–10
–2 –3 –5 –7
–10
Drain-Sou
Drain Current I (A)
D
Source-Drain Diode Forward
Characteristics (Typical)
–10
–8
–6
–4
–2
0
–50
Tch = 25°C
= – 30A
V
= 0V
GS
Pulse Test
I
D
–40
–30
–20
–10
0
Tc = 25°C
75°C
V
= –10V
DS
–20V
–25V
125°C
0
10
20
30
40
50
0
–0.4 –0.8
–1.2
–1.6
–2.0
Gate Charge Qg (nC)
Source-Drain Voltage V
(V)
SD
Rev.1.00, Aug.20.2004, page 4 of 6
FX30KMJ-03
On-State Resistance vs.
Channel Temperature (Typical)
Threshold Voltage vs.
Channel Temperature (Typical)
101
–4.0
–3.2
–2.4
–1.6
–0.8
0
V
= –10V
GS
= 1/2 I
Pulse Test
V
= –10V
DS
= –1mA
7
I
D
D
I
D
5
4
3
2
100
7
5
4
3
2
10–1
–50
0
50
100
150
–50
0
50
100
150
Channel Temperature Tch (°C)
Channel Temperature Tch (°C)
Breakdown Voltage vs.
Channel Temperature (Typical)
Transiedance Characteristics
1.4
1.2
1.0
0.8
0.6
0.4
101
7
5
V
= 0V
GS
= –1mA
D
I
D
Pulse
P
DM
tw
T
tw
T
D =
–3
–2
–1
0
1
2 3 57
10 10
2
4
10
10
10
10
2 3 57
2 3 57
2 3 57
2 3 57
2 3 57
–50
0
50
10
Channel Tempera
Pulse Width tw (s)
Switching
Switching Waveform
Vin
nitor
Vin Monito
GEN
10%
R
R
L
90%
90%
90%
V
DD
R
GS
10%
10%
Vout
t
t
r
t
t
f
d(on)
d(off)
Rev.1.00, Aug.20.2004, page 5 of 6
FX30KMJ-03
Package Dimensions
TO-220FN
EIAJ Package Code
Mass (g) (reference value)
2.0
Lead Material
Cu alloy
JEDEC Code
2.8 0.2
10 0.3
φ 3.2 0.2
1.1 0.2
1.1 0.2
0.75 0.15
2.54 0.25
0.75 0.15
2.54 0.25
Dimension in Millimeters
Min Typ Max
l
A
b
1
2
D
E
e
x
Note 1) The dimensional figures indicate representative values unless
otherwise the tolerance is specified.
y
y1
ZD
ZE
Order Code
Standard order
code example
Lead form
Stand
Standard order code
Straight type
Lead form
Plas
P
50 Type name
50 Type name – Lead forming code
FX30KMJ-03
FX30KMJ-03-A8
Note : Please confirhipping in detail.
Rev.1.00, Aug.20.2004, page 6 of 6
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