FX30KMJ-06 [POWEREX]
Pch POWER MOSFET HIGH-SPEED SWITCHING USE; P沟道功率MOSFET的高速开关使用
| 型号： | FX30KMJ-06 |
| 厂家： | 
POWEREX POWER SEMICONDUCTORS |
| 描述： | Pch POWER MOSFET HIGH-SPEED SWITCHING USE |
| 文件： | 总4页 (文件大小：59K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MITSUBISHI Pch POWER MOSFET
FX30KMJ-06
HIGH-SPEED SWITCHING USE
FX30KMJ-06
OUTLINE DRAWING
Dimensions in mm
10 ± 0.3
2.8 ± 0.2
φ 3.2 ± 0.2
1.1 ± 0.2
1.1 ± 0.2
E
0.75 ± 0.15
2.54 ± 0.25
0.75 ± 0.15
2.54 ± 0.25
1
2
3
3
4V DRIVE
•
1
2
3
GATE
DRAIN
SOURCE
VDSS ............................................................... –60V
•
1
rDS (ON) (MAX) ................................................ 54mΩ
ID .................................................................... –30A
•
•
2
Integrated Fast Recovery Diode (TYP.) ...........55ns
•
Viso ................................................................................ 2000V
•
TO-220FN
APPLICATION
Motor control, Lamp control, Solenoid control
DC-DC converter, etc.
MAXIMUM RATINGS (Tc = 25°C)
Symbol
VDSS
VGSS
ID
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Conditions
Ratings
Unit
V
VGS = 0V
VDS = 0V
–60
±20
V
–30
A
Drain current (Pulsed)
Avalanche drain current (Pulsed)
Source current
IDM
IDA
–120
–30
A
L = 50µH
A
IS
–30
A
Source current (Pulsed)
Maximum power dissipation
Channel temperature
Storage temperature
Isolation voltage
ISM
–120
30
A
PD
W
°C
°C
V
Tch
–55 ~ +150
–55 ~ +150
2000
2.0
Tstg
Viso
—
AC for 1minute, Terminal to case
Typical value
Weight
g
Jan.1999
MITSUBISHI Pch POWER MOSFET
FX30KMJ-06
HIGH-SPEED SWITCHING USE
ELECTRICAL CHARACTERISTICS (Tch = 25°C)
Symbol Parameter
Limits
Unit
Test conditions
Min.
–60
—
Typ.
—
Max.
—
ID = –1mA, VGS = 0V
V
(BR) DSS Drain-source breakdown voltage
V
µA
mA
V
VGS = ±20V, VDS = 0V
VDS = –60V, VGS = 0V
ID = –1mA, VDS = –10V
ID = –15A, VGS = –10V
ID = –15A, VGS = –4V
ID = –15A, VGS = –10V
ID = –15A, VDS = –10V
IGSS
IDSS
Gate-source leakage current
Drain-source leakage current
Gate-source threshold voltage
Drain-source on-state resistance
Drain-source on-state resistance
Drain-source on-state voltage
Forward transfer admittance
Input capacitance
—
±0.1
–0.1
–2.3
54
—
—
VGS (th)
rDS (ON)
rDS (ON)
VDS (ON)
yfs
–1.3
—
–1.8
41
mΩ
mΩ
V
—
66
92
—
–0.62
22
–0.81
—
—
S
Ciss
—
4210
466
265
18
—
pF
pF
pF
ns
VDS = –10V, VGS = 0V, f = 1MHz
Coss
Crss
Output capacitance
—
—
Reverse transfer capacitance
Turn-on delay time
—
—
td (on)
tr
—
—
Rise time
—
56
—
ns
VDD = –30V, ID = –15A, VGS = –10V, RGEN = RGS = 50Ω
td (off)
tf
Turn-off delay time
—
274
131
–1.0
—
—
ns
Fall time
—
—
ns
IS = –15A, VGS = 0V
Channel to case
VSD
Source-drain voltage
Thermal resistance
—
–1.5
4.17
—
V
Rth (ch-c)
trr
—
°C/W
ns
IS = –30A, dis/dt = 100A/µs
Reverse recovery time
—
55
PERFORMANCE CURVES
POWER DISSIPATION DERATING CURVE
MAXIMUM SAFE OPERATING AREA
–2
50
40
30
20
10
0
–102
–7
–5
tw =
10µs
–3
–2
100µs
–101
–7
–5
1ms
–3
–2
TC = 25°C
10ms
Single Pulse
100ms
–100
–7
–5
DC
–3
–2
0
1
2
–2
–2 –3 –5–7
–10
–2 –3 –5–7
–10
–2 –3 –5–7
–10
0
50
100
150
200
CASE TEMPERATURE TC (°C)
DRAIN-SOURCE VOLTAGE VDS (V)
OUTPUT CHARACTERISTICS
(TYPICAL)
OUTPUT CHARACTERISTICS
(TYPICAL)
–
50
–20
–16
–12
–8
VGS =
–5V
VGS =
–10V
–10V
–6V
PD = 30W
–
40
–
30
–
20
–
10
0
–8V
–8V
–6V
–3V
–5V
–4V
–4V
Tc = 25°C
Pulse Test
–3V
Tc = 25°C
Pulse Test
–4
PD = 30W
0
–
–
2.0
–
3.0
–
4.0
–
5.0
0
1.0
0
–0.4
–0.8
–1.2
–1.6
–2.0
DRAIN-SOURCE VOLTAGE VDS (V)
DRAIN-SOURCE VOLTAGE VDS (V)
Jan.1999
MITSUBISHI Pch POWER MOSFET
FX30KMJ-06
HIGH-SPEED SWITCHING USE
ON-STATE VOLTAGE VS.
GATE-SOURCE VOLTAGE
(TYPICAL)
ON-STATE RESISTANCE VS.
DRAIN CURRENT
(TYPICAL)
–5.0
–4.0
–3.0
–2.0
–1.0
0
100
80
60
40
20
0
Tc = 25°C
Pulse Test
Tc = 25°C
Pulse Test
V
GS = –4V
ID =
–10V
–50A
–30A
–15A
0
–2
–4
–6
–8
–10
–10–1 –2 –3 –5–7–100 –2 –3 –5–7–101 –2 –3 –5–7–102
GATE-SOURCE VOLTAGE
V
GS (V)
DRAIN CURRENT ID (A)
FORWARD TRANSFER ADMITTANCE
VS.DRAIN CURRENT
(TYPICAL)
TRANSFER CHARACTERISTICS
(TYPICAL)
–50
–40
–30
–20
–10
0
102
7
Tc = 25°C
V
DS = –10V
5
4
3
Pulse Test
TC =
125°C
75°C
25°C
2
101
7
V
DS = –10V
5
4
3
Pulse Test
2
100
0
–2
–4
–6
–8
–10
–100
–2 –3 –4–5 –7–101
–2 –3 –4–5 –7–102
GATE-SOURCE VOLTAGE
V
GS (V)
DRAIN CURRENT ID (A)
CAPACITANCE VS.
DRAIN-SOURCE VOLTAGE
(TYPICAL)
SWITCHING CHARACTERISTICS
(TYPICAL)
2
5
Tch = 25°C
f = 1MH
GS = 0V
t
d(off)
104
7
5
Z
3
2
V
t
f
3
2
Ciss
102
7
t
r
103
7
5
5
Coss
Crss
3
2
3
2
t
d(on)
102
7
5
Tch = 25°C
GS = –10V
DD = –30V
V
V
R
101
7
3
2
GEN = RGS = 50Ω
5
–3 –5–7–100 –2 –3 –5–7–101 –2 –3 –5–7–102 –2 –3
–7–100 –2 –3 –5 –7–101 –2 –3 –5 –7
DRAIN-SOURCE VOLTAGE
V
DS (V)
DRAIN CURRENT ID (A)
Jan.1999
MITSUBISHI Pch POWER MOSFET
FX30KMJ-06
HIGH-SPEED SWITCHING USE
GATE-SOURCE VOLTAGE
VS.GATE CHARGE
(TYPICAL)
SOURCE-DRAIN DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
–10
–8
–6
–4
–2
0
–50
–40
–30
–20
–10
0
Tch = 25°C
= –30A
V
GS = 0V
TC =
I
D
Pulse Test
125°C
V
DS =
–10V
–20V
–40V
75°C
25°C
0
20
40
60
80
(nC)
100
0
–0.4
–0.8
–1.2
–1.6
–2.0
GATE CHARGE
Qg
SOURCE-DRAIN VOLTAGE VSD (V)
ON-STATE RESISTANCE VS.
CHANNEL TEMPERATURE
(TYPICAL)
THRESHOLD VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
101
7
–4.0
–3.2
–2.4
–1.6
–0.8
0
V
GS = –10V
V
DS = –10V
ID = –1mA
I
D
= 1/2I
D
5
4
3
Pulse Test
2
100
7
5
4
3
2
10–1
–50
0
50
100
150
–50
0
50
100
150
CHANNEL TEMPERATURE Tch (°C)
CHANNEL TEMPERATURE Tch (°C)
BREAKDOWN VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTICS
1.4
1.2
1.0
0.8
0.6
0.4
101
7
5
V
I
GS = 0V
D = –1mA
D = 1.0
3
2
0.5
0.2
100
7
5
0.1
3
2
0.05
P
DM
0.02
0.01
10–1
tw
7
5
T
Single Pulse
tw
D
=
3
2
T
10–2
–50
0
50
100
150
10–42 3 5710–32 3 5710–22 3 5710–12 3 57100 2 3 57101 2 3 57102
CHANNEL TEMPERATURE Tch (°C)
PULSE WIDTH tw (s)
Jan.1999
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