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FX30KMJ-3 [POWEREX]

Pch POWER MOSFET HIGH-SPEED SWITCHING USE; P沟道功率MOSFET的高速开关使用
FX30KMJ-3
型号： FX30KMJ-3
厂家： POWEREX POWER SEMICONDUCTORS    POWEREX POWER SEMICONDUCTORS
描述：

Pch POWER MOSFET HIGH-SPEED SWITCHING USE
P沟道功率MOSFET的高速开关使用

晶体 开关 晶体管 脉冲 局域网
文件： 总4页 (文件大小：58K)
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MITSUBISHI Pch POWER MOSFET  
FX30KMJ-3  
HIGH-SPEED SWITCHING USE  
FX30KMJ-3  
OUTLINE DRAWING  
Dimensions in mm  
10 ± 0.3  
2.8 ± 0.2  
φ 3.2 ± 0.2  
1.1 ± 0.2  
1.1 ± 0.2  
E
0.75 ± 0.15  
2.54 ± 0.25  
0.75 ± 0.15  
2.54 ± 0.25  
1
2
3
3
4V DRIVE  
•
1
2
3
GATE  
DRAIN  
SOURCE  
VDSS ............................................................. –150V  
•
1
rDS (ON) (MAX) .............................................. 100mΩ  
ID .................................................................... –30A  
•
•
Integrated Fast Recovery Diode (TYP.) .........100ns  
2
•
Viso ................................................................................ 2000V  
•
TO-220FN  
APPLICATION  
Motor control, Lamp control, Solenoid control  
DC-DC converter, etc.  
MAXIMUM RATINGS (Tc = 25°C)  
Symbol  
VDSS  
VGSS  
ID  
Parameter  
Drain-source voltage  
Gate-source voltage  
Drain current  
Conditions  
Ratings  
Unit  
V
VGS = 0V  
VDS = 0V  
–150  
±20  
V
–30  
A
Drain current (Pulsed)  
Avalanche drain current (Pulsed)  
Source current  
IDM  
IDA  
–120  
A
L = 30µH  
–30  
A
IS  
–30  
A
Source current (Pulsed)  
Maximum power dissipation  
Channel temperature  
Storage temperature  
Isolation voltage  
ISM  
–120  
A
PD  
35  
W
°C  
°C  
V
Tch  
–55 ~ +150  
–55 ~ +150  
2000  
Tstg  
Viso  
—
AC for 1minute, Terminal to case  
Typical value  
Weight  
2.0  
g
Jan.1999  
MITSUBISHI Pch POWER MOSFET  
FX30KMJ-3  
HIGH-SPEED SWITCHING USE  
ELECTRICAL CHARACTERISTICS (Tch = 25°C)  
Symbol Parameter  
Limits  
Unit  
Test conditions  
Min.  
–150  
—
Typ.  
—
Max.  
—
ID = –1mA, VGS = 0V  
V
(BR) DSS Drain-source breakdown voltage  
V
µA  
mA  
V
VGS = ±20V, VDS = 0V  
VDS = –150V, VGS = 0V  
ID = –1mA, VDS = –10V  
ID = –15A, VGS = –10V  
ID = –15A, VGS = –4V  
ID = –15A, VGS = –10V  
ID = –15A, VDS = –10V  
IGSS  
IDSS  
Gate-source leakage current  
Drain-source leakage current  
Gate-source threshold voltage  
Drain-source on-state resistance  
Drain-source on-state resistance  
Drain-source on-state voltage  
Forward transfer admittance  
Input capacitance  
—
±0.1  
–0.1  
–2.0  
100  
111  
–1.50  
—
—
—
VGS (th)  
rDS (ON)  
rDS (ON)  
VDS (ON)  
yfs  
–1.0  
—
–1.5  
78  
mΩ  
mΩ  
V
—
85  
—
–1.17  
41.3  
11430  
674  
320  
61  
—
S
Ciss  
—
—
pF  
pF  
pF  
ns  
VDS = –10V, VGS = 0V, f = 1MHz  
Coss  
Crss  
Output capacitance  
—
—
Reverse transfer capacitance  
Turn-on delay time  
—
—
td (on)  
tr  
—
—
Rise time  
—
99  
—
ns  
VDD = –80V, ID = –15A, VGS = –10V, RGEN = RGS = 50Ω  
td (off)  
tf  
Turn-off delay time  
—
878  
330  
–1.0  
—
—
ns  
Fall time  
—
—
ns  
IS = –15A, VGS = 0V  
Channel to case  
VSD  
Source-drain voltage  
Thermal resistance  
—
–1.5  
3.57  
—
V
Rth (ch-c)  
trr  
—
°C/W  
ns  
IS = –30A, dis/dt = 100A/µs  
Reverse recovery time  
—
100  
PERFORMANCE CURVES  
POWER DISSIPATION DERATING CURVE  
MAXIMUM SAFE OPERATING AREA  
–2  
50  
40  
30  
20  
10  
0
–102  
–7  
–5  
tw = 10µs  
100µs  
–3  
–2  
–101  
–7  
–5  
1ms  
–3  
–2  
10ms  
–100  
–7  
–5  
TC = 25°C  
–3  
–2  
Single Pulse  
DC  
1
2
3
–2  
–2 –3 –5–7  
–10  
–2 –3 –5–7  
–10  
–2 –3 –5–7  
–10  
0
50  
100  
150  
200  
CASE TEMPERATURE TC (°C)  
DRAIN-SOURCE VOLTAGE VDS (V)  
OUTPUT CHARACTERISTICS  
(TYPICAL)  
OUTPUT CHARACTERISTICS  
(TYPICAL)  
–50  
–40  
–30  
–20  
–10  
0
–20  
–16  
–12  
–8  
VGS = –10V  
–3V  
TC = 25°C  
Pulse Test  
TC = 25°C  
Pulse Test  
VGS = –10V  
–6V  
–6V  
–4V  
–5V  
–4V  
–3.5V  
PD = 35W  
–2.5V  
–3V  
–4  
PD = 35W  
0
0
–2  
–4  
–6  
–8  
–10  
0
–1.0  
–2.0  
–3.0  
–4.0  
–5.0  
DRAIN-SOURCE VOLTAGE VDS (V)  
DRAIN-SOURCE VOLTAGE VDS (V)  
Jan.1999  
MITSUBISHI Pch POWER MOSFET  
FX30KMJ-3  
HIGH-SPEED SWITCHING USE  
ON-STATE VOLTAGE VS.  
GATE-SOURCE VOLTAGE  
(TYPICAL)  
ON-STATE RESISTANCE VS.  
DRAIN CURRENT  
(TYPICAL)  
–10  
–8  
–6  
–4  
–2  
0
200  
160  
120  
80  
T
C
= 25°C  
T
C
= 25°C  
Pulse Test  
Pulse Test  
V
GS = –4V  
I
D
= –45A  
–30A  
–10V  
40  
–15A  
0
0
–2  
–4  
–6  
–8  
–10  
–100 –2 –3 –5 –7–101 –2 –3 –5 –7–102  
GATE-SOURCE VOLTAGE  
V
GS (V)  
DRAIN CURRENT ID (A)  
FORWARD TRANSFER ADMITTANCE  
VS.DRAIN CURRENT  
(TYPICAL)  
TRANSFER CHARACTERISTICS  
(TYPICAL)  
–50  
–40  
–30  
–20  
–10  
0
102  
7
T
V
C
= 25°C  
DS = –10V  
Pulse Test  
T
C
= 25°C  
75°C  
5
3
2
125°C  
101  
7
5
3
2
V
DS = –10V  
Pulse Test  
100  
0
–2  
–4  
–6  
–8  
–10  
–7–100 –2 –3 –5 –7–101 –2 –3 –5 –7  
DRAIN CURRENT (A)  
GATE-SOURCE VOLTAGE  
V
GS (V)  
ID  
CAPACITANCE VS.  
DRAIN-SOURCE VOLTAGE  
(TYPICAL)  
SWITCHING CHARACTERISTICS  
(TYPICAL)  
105  
7
2
T
C
h = 25°C  
f = 1MH  
GS = 0V  
5
Z
t
t
d(off)  
103  
7
V
3
2
Ciss  
5
104  
7
5
f
3
2
3
2
t
t
r
102  
7
103  
7
d(on)  
5
Coss  
Crss  
T
V
V
C
h = 25°C  
DD = –80V  
GS = –10V  
GEN = RGS = 50Ω  
5
3
2
3
2
R
102  
–100 –2  
–10  
–2 –3 –5 –7  
–7 –100 –2 –3 –5–7 –101 –2 –3 –5–7 –102 –2 –3 –5–7  
1
2
–7  
–5  
–3  
–10  
DRAIN-SOURCE VOLTAGE  
V
DS (V)  
DRAIN CURRENT ID (A)  
Jan.1999  
MITSUBISHI Pch POWER MOSFET  
FX30KMJ-3  
HIGH-SPEED SWITCHING USE  
GATE-SOURCE VOLTAGE  
VS.GATE CHARGE  
(TYPICAL)  
SOURCE-DRAIN DIODE  
FORWARD CHARACTERISTICS  
(TYPICAL)  
–10  
–8  
–6  
–4  
–2  
0
–50  
–40  
–30  
–20  
–10  
0
V
GS = 0V  
T
C
h = 25°C  
Pulse Test  
I
D = –30A  
TC = 125°C  
75°C  
25°C  
V
DS = –50V  
–80V  
–100V  
0
40  
80  
120  
160  
(nC)  
200  
0
–0.4  
–0.8  
–1.2  
–1.6  
–2.0  
GATE CHARGE  
Q
g
SOURCE-DRAIN VOLTAGE V  
SD (V)  
ON-STATE RESISTANCE VS.  
CHANNEL TEMPERATURE  
(TYPICAL)  
THRESHOLD VOLTAGE VS.  
CHANNEL TEMPERATURE  
(TYPICAL)  
101  
7
–4.0  
–3.2  
–2.4  
–1.6  
–0.8  
0
V
GS = –10V  
= 1/2I  
Pulse Test  
V
DS = –10V  
ID = –1mA  
I
D
D
5
3
2
100  
7
5
3
2
10–1  
–50  
0
50  
100  
150  
–50  
0
50  
100  
150  
CHANNEL TEMPERATURE Tch (°C)  
CHANNEL TEMPERATURE Tch (°C)  
BREAKDOWN VOLTAGE VS.  
CHANNEL TEMPERATURE  
(TYPICAL)  
TRANSIENT THERMAL IMPEDANCE  
CHARACTERISTICS  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
101  
7
5
V
I
GS = 0V  
D = –1mA  
D = 1.0  
3
2
0.5  
100  
7
5
0.2  
0.1  
3
2
0.05  
0.02  
P
DM  
10–1  
tw  
7
5
T
0.01  
Single Pulse  
tw  
D
=
T
3
2
10–2  
–50  
0
50  
100  
150  
10–42 3 5710–32 3 5710–22 3 5710–12 3 57100 2 3 57101 2 3 57102  
CHANNEL TEMPERATURE Tch (°C)  
PULSE WIDTH tw (s)  
Jan.1999  

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