FX20ASJ-2 [RENESAS]
High-Speed Switching Use Pch Power MOS FET; 高速开关使用P沟道功率MOS FET型号: | FX20ASJ-2 |
厂家: | RENESAS TECHNOLOGY CORP |
描述: | High-Speed Switching Use Pch Power MOS FET |
文件: | 总7页 (文件大小:173K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
FX20ASJ-2
High-Speed Switching Use
Pch Power MOS FET
REJ03G1441-0200
(Previous: MEJ02G0281-0101)
Rev.2.00
Aug 07, 2006
Features
•
•
•
•
•
Drive voltage : 4 V
DSS : – 100 V
DS(ON) (max) : 0.26 Ω
V
r
ID : – 20 A
Integrated Fast Recovery Diode (TYP.) : 100 ns
Outline
RENESAS Package code: PRSS0004ZA-A
(Package name: MP-3A)
4
1. Gate
2. Drain
3. Source
4. Drain
1
2
3
2, 4
Applications
Motor control, Lamp coDC converters, etc.
Maximum Ratings
(Tc = 25°C)
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Symbol
VDSS
VGSS
ID
Ratings
–100
Unit
Conditions
VGS = 0 V
V
V
±20
VDS = 0 V
–20
A
Drain current (Pulsed)
Avalanche drain current (Pulsed)
Source current
IDM
–80
A
IDA
–20
A
L = 50 µH
IS
–20
A
Source current (Pulsed)
Maximum power dissipation
Channel temperature
Storage temperature
Mass
ISM
–80
A
PD
35
W
°C
°C
g
Tch
Tstg
—
– 55 to +150
– 55 to +150
0.32
Typical value
Rev.2.00 Aug 07, 2006 page 1 of 6
FX20ASJ-2
Electrical Characteristics
(Tch = 25°C)
Parameter
Drain-source breakdown voltage
Gate-source leakage current
Drain-source leakage current
Gate-source threshold voltage
Drain-source on-state resistance
Drain-source on-state resistance
Drain-source on-state voltage
Forward transfer admittance
Input capacitance
Symbol
V(BR)DSS
IGSS
Min
–100
—
Typ
—
Max
—
Unit
V
Test Conditions
ID = –1 mA, VGS = 0 V
VGS = ±20 V, VDS = 0 V
VDS = –100 V, VGS = 0 V
ID = –1 mA, VDS = –10 V
ID = –10 A, VGS = –10 V
ID = –10 A, VGS = – 4 V
ID = –10 A, VGS = –10 V
ID = –10 A, VDS = –10 V
—
±0.1
–0.1
–2.3
0.26
0.32
–2.6
—
µA
mA
V
IDSS
—
—
VGS(th)
rDS(ON)
rDS(ON)
VDS(ON)
| yfs |
Ciss
Coss
Crss
td(on)
–1.3
—
–1.8
0.20
0.25
–2.0
10.3
2360
198
99
Ω
—
Ω
—
V
—
S
—
—
pF
pF
pF
ns
ns
ns
s
VDS = –10 V, VGS = 0 V,
f = 1MHz
Output capacitance
—
—
Reverse transfer capacitance
Turn-on delay time
—
—
—
13
—
VDD = –50 V, ID = –10 A,
GS = –10 V,
RGEN = RGS = 50 Ω
V
Rise time
tr
—
30
—
Turn-off delay time
td(off)
—
139
74
—
Fall time
tf
—
—
Source-drain voltage
VSD
—
–1.0
—
IS = –10 A, VGS = 0 V
hannel to case
Thermal resistance
Rth(ch-c)
trr
—
Reverse recovery time
—
100
–20 A, dis/dt = 100 A/µs
Rev.2.00 Aug 07, 2006 page 2 of 6
FX20ASJ-2
Performance Curves
Power Dissipation Derating Curve
Maximum Safe Operating Area
–2
50
40
30
20
10
0
–102
–7
–5
–3
–2
–101
–7
–5
DC
–3
–2
–100
–7
–5
Tc = 25°C
Single Pulse
–3
–2
0
1
2
–2 –3 –5–7 –2
–10
–2 –3 –5–7
–10
–2 –3 –5–7
–10
0
50
100
150
200
Case Temperature Tc (°C)
Drain-Source Voltage VDS (V)
cteristics (Typical)
Output Characteristics (Typical)
–
50
VGS =
–10V
Tc = 25°C
Pulse Test
–5V
–4V
–8V
–6V
–
40
Tc = 25°C
Pulse Test
V
–5V
–
30
–
–
20
–3V
–10
–4
PD = 35W
0
0
–
10
–
20
0
0
–4
–8
–12
–16
–20
Drain-So
Drain-Source Voltage VDS (V)
On-State Resistance vs.
Drain Current (Typical)
On-S
Gate-Source cal)
–50
–40
–30
–20
–10
0
0.5
0.4
0.3
0.2
0.1
0
Tc = 25°C
Pulse Test
V
GS =
–4V
–10V
ID =
–40A
Tc = 25°C
Pulse Test
–20A
–10A
–2
0
–4
–6
–8
–10
–10–1 –2 –3 –5–7–100 –2 –3 –5–7–101 –2 –3 –5–7–102
Gate-Source Voltage VGS (V)
Drain Current ID (A)
Rev.2.00 Aug 07, 2006 page 3 of 6
FX20ASJ-2
Forward Transfer Admittance vs.
Drain Current (Typical)
Transfer Characteristics (Typical)
–50
2
Tc = 25°C
V
= –10V
DS
Pulse Test
101
7
–40
–30
–20
–10
0
5
4
3
Tc = 25°C 75°C
125°C
2
100
7
V
= –10V
DS
Pulse Test
5
4
3
2
0
–2
–4
–6
–8
–10
–7–100
–2 –3 –4–5 –7–101
–2 –3 –4–5 –7
Gate-Source Voltage VGS (V)
Drain Current ID (A)
Capacitance vs.
Drain-Source Voltage (Typical)
haracteristics (Typical)
3
2
(off)
Ciss
103
7
t
t
f
Tch = 25°C
f = 1MHz
5
4
V
GS
= 0V
r
3
2
td(on)
Coss
102
7
01
7
Tch = 25°C
V
DD
= –50V
= –10V
= R
V
GS
5
4
5
4
R
GEN
= 50Ω
GS
3
3
–3 –5–7–100 –2 –3 –5–7–1
–5 –7–100
–2 –3 –4–5 –7–101
–2 –3 –4–5
Drain-Sourc
Drain Current ID (A)
Gat
Gate
Source-Drain Diode Forward
Characteristics (Typical)
–10
–8
–6
–4
–2
0
–50
–40
–30
–20
–10
0
V
= 0V
GS
Pulse Test
Tch = 25°C
= –20A
I
D
V
–20V
DS =
–50V
TC =
–80V
25°C
75°C
125°C
0
10
20
30
40
50
0
–0.4
–0.8
–1.2
–1.6
–2.0
Gate Charge Qg (nC)
Source-Drain Voltage VSD (V)
Rev.2.00 Aug 07, 2006 page 4 of 6
FX20ASJ-2
Threshold Voltage vs.
Channel Temperature (Typical)
On-State Resistance vs.
Channel Temperature (Typical)
101
7
–4.0
–3.2
–2.4
–1.6
–0.8
0
V
= –10V
V
= –10V
GS
= –10A
Pulse Test
DS
I = –1mA
D
I
D
5
4
3
2
100
7
5
4
3
2
10–1
–50
0
50
100
150
–50
0
50
100
150
Channel Temperature Tch (°C)
Channel Temperature Tch (°C)
Breakdown Voltage vs.
Channel Temperature (Typical)
Transiepedance Characteristics
1.4
1.2
1.0
0.8
0.6
0.4
101
7
5
V
= 0V
GS
= –1mA
D
I
D
3
2
.01
Single Pulse
P
DM
tw
T
tw
T
D
=
–50
0
50
10–42 3 5710–32 3 5710–22 3 5710–12 3 57100 2 3 57101 2 3 57102
Pulse Width tw (s)
Channel Tempe
Switching Time
Switching Waveform
Vin
Vout
Monitor
Vin Monitor
10%
D.U.T.
90%
R
GEN
R
L
90%
90%
V
DD
R
GS
10%
10%
Vout
t
t
t
t
f
d(on)
r
d(off)
Rev.2.00 Aug 07, 2006 page 5 of 6
FX20ASJ-2
Package Dimensions
Package Name
MP-3A
JEITA Package Code
SC-63
RENESAS Code
PRSS0004ZA-A
Previous Code
MASS[Typ.]
0.32g
Unit: mm
2.3
6.6
5.3 0.2
0.5 0.2
0.1 0.1
0.76 0.2
0.76
0.5
2.3 0.2
Order Code
Standard order
code example
Lead form
Standard p
Standard order code
Surface-mounted type Taping
Surface-mounted type
Plas
(
Note: Please confirm thhipping in detail.
Type name – T +Direction (1 or 2) +3
FX20ASJ-2-T13
FX20ASJ-2
5 Type name
Rev.2.00 Aug 07, 2006 page 6 of 6
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