FX20K150 [DIOTEC]
Rectifier with Overvoltage Protection;型号: | FX20K150 |
厂家: | DIOTEC SEMICONDUCTOR |
描述: | Rectifier with Overvoltage Protection |
文件: | 总3页 (文件大小:124K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
FX20K120 ... FX20K150
FX20K120 ... FX20K150
Protectifiers® – LowVF-Rectifier with Overvoltage Protection
Protectifiers® – LowVF-Gleichrichter mit Überspannungs-Schutz
Version 2013-02-01
Nominal current
Nennstrom
20 A
120...150 V
Ø 8 x 7.5 [mm]
2.0 g
Stand off voltage
Sperrspannung
Ø 8±0.1
Plastic case
Kunststoffgehäuse
Weight approx.
Gewicht ca.
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
Ø 1.6±0.05
Standard packaging taped in ammo pack
Standard Lieferform gegurtet in Ammo-Pack
Dimensions - Maße [mm]
Low forward losses, high reverse pulse power capability
Niedrige Durchlass-Verluste, hohe Rückwärts-Pulsbelastbarkeit
Maximum ratings and Charactistics (TJ = 25°C)
Grenz- und Kennwerte (TJ = 25°C)
Type
Typ
Stand-off voltage Max. rev. current
Breakdown voltage
Abbruch-Spannung
Forward voltage
Durchlass-Spannung
VF [V] 1)
Sperrspannung
Max. Sperrstrom
at/bei VWM
VWM [V]
120
ID [µA]
VBR min [V]
130
@ IT [mA]
IF = 5A
< 0.82
< 0.82
IF = 20A
< 0.94
< 0.94
FX20K120
FX20K150
5
5
5
5
150
160
Max. average forward rectified current, R-load
Dauergrenzstrom in Einwegschaltung mit R-Last
TA = 50°C
IFAV
Ptot
IFRM
IFSM
i2t
20 A 2)
Total steady state power dissipation
Gesamtverlustleistung im Dauerbetrieb
TA = 50°C
f > 15 Hz
TA = 25°C
TA = 25°C
12 W
130 A 1)
Repetitive peak forward current
Periodischer Spitzenstrom
Peak forward surge current, 50/60 Hz half sine-wave
Stoßstrom für eine 50/60 Hz Sinus-Halbwelle
650/715 A
2112 A2s
Rating for fusing, t < 10 ms
Grenzlastintegral, t < 10 ms
Junction temperature – Sperrschichttemperatur
Tj
Tj
-50...+175°C
+200°C
in DC forward mode – bei Gleichstrom-Durchlassbetrieb
Storage temperature – Lagerungstemperatur
TS
-50...+175°C
1
2
Tj = 25°C
Valid, if leads are kept at ambient temperature at a distance of 10 mm from case
Gültig, wenn die Anschlussdrähte in 10 mm Abstand von Gehäuse auf Umgebungstemperatur gehalten werden
© Diotec Semiconductor AG
http://www.diotec.com/
1
FX20K120 ... FX20K150
Characteristics
Kennwerte
Leakage current
Sperrstrom
Tj = 25°C
Tj = 100°C VR = VWM
VR = VWM
IR
IR
< 5 µA
< 200 µA
ESD rating according to JESD22-A114 / contact discharge
ESD-Festigkeit gemäß JESD22-A114 / Kontaktentladung
C = 100pF R = 1.5kΩ
20 kV
Peak pulse power dissipation
Impuls-Verlustleistung
10/1000µs pulse 1) TA = 25°C
PPPM
IPPM
trr
750 W
Max. reverse peak pulse current
Max. Impuls-Strom in Sperr-Richtung
8/20µs pulse 2)
TA = 25°C
230 A
Reverse recovery time
Sperrverzug
IF = 0.5 A through/über
IR = 1 A to IR = 0.25 A
< 300 ns
< 8 K/W 3)
< 1.5 K/W
Thermal resistance junction to ambient air
Wärmewiderstand Sperrschicht – umgebende Luft
RthA
RthL
Thermal resistance junction to leads
Wärmewiderstand Sperrschicht – Anschlussdraht
103
[A]
120
[%]
100
Tj = 125°C
102
80
Tj = 25°C
10
60
40
1
IF
20
IFAV
0
400a-(5a-0,8v)
10-1
0.4
1.0
1.4
VF 0.8
1.2
[V] 1.8
0
TC
100
150
50
[°C]
Forward characteristics (typical values)
Durchlasskennlinien (typische Werte)
Rated forward current vs. temp. of the case
Zul. Richtstrom in Abh. v. d. Temp. Des Gehäuses
1
2
3
See curve IPP = f (t) 10/1000µs – Siehe Kurve IPP = f (t) 10/1000µs
See curve IPP = f (t) 8/20µs – Siehe Kurve IPP = f (t) 8/20µs
Valid, if leads are kept at ambient temperature at a distance of 10 mm from case
Gültig, wenn die Anschlussdrähte in 10 mm Abstand von Gehäuse auf Umgebungstemperatur gehalten werden
2
http://www.diotec.com/
© Diotec Semiconductor AG
FX20K120 ... FX20K150
tr = 10 µs
tr = 8 µs
100
[%]
100
[%]
80
80
60
60
IPPM/2
IPPM/2
PPPM/2
40
PPPM/2
40
IPP
IPP
20
20
PPP
PPP
tP
tP
t
0
0
0
t
1
2
3
[ms] 4
0
20
40
60 [µs]
10/1000µs - pulse waveform
10/1000µs - Impulsform
8/20µs - pulse waveform
8/20µs - Impulsform
© Diotec Semiconductor AG
http://www.diotec.com/
3
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