FX20ASJ-2-T13 [RENESAS]
High-Speed Switching Use Pch Power MOS FET; 高速开关使用P沟道功率MOS FET
| 型号： | FX20ASJ-2-T13 |
| 厂家： | 
RENESAS TECHNOLOGY CORP |
| 描述： | High-Speed Switching Use Pch Power MOS FET |
| 文件： | 总7页 (文件大小：173K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
FX20ASJ-2
High-Speed Switching Use
Pch Power MOS FET
REJ03G1441-0200
(Previous: MEJ02G0281-0101)
Rev.2.00
Aug 07, 2006
Features
•
•
•
•
•
Drive voltage : 4 V
DSS : – 100 V
DS(ON) (max) : 0.26 Ω
V
r
ID : – 20 A
Integrated Fast Recovery Diode (TYP.) : 100 ns
Outline
RENESAS Package code: PRSS0004ZA-A
(Package name: MP-3A)
4
1. Gate
2. Drain
3. Source
4. Drain
1
2
3
2, 4
Applications
Motor control, Lamp coDC converters, etc.
Maximum Ratings
(Tc = 25°C)
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Symbol
VDSS
VGSS
ID
Ratings
–100
Unit
Conditions
VGS = 0 V
V
V
±20
VDS = 0 V
–20
A
Drain current (Pulsed)
Avalanche drain current (Pulsed)
Source current
IDM
–80
A
IDA
–20
A
L = 50 µH
IS
–20
A
Source current (Pulsed)
Maximum power dissipation
Channel temperature
Storage temperature
Mass
ISM
–80
A
PD
35
W
°C
°C
g
Tch
Tstg
—
– 55 to +150
– 55 to +150
0.32
Typical value
Rev.2.00 Aug 07, 2006 page 1 of 6
FX20ASJ-2
Electrical Characteristics
(Tch = 25°C)
Parameter
Drain-source breakdown voltage
Gate-source leakage current
Drain-source leakage current
Gate-source threshold voltage
Drain-source on-state resistance
Drain-source on-state resistance
Drain-source on-state voltage
Forward transfer admittance
Input capacitance
Symbol
V(BR)DSS
IGSS
Min
–100
—
Typ
—
Max
—
Unit
V
Test Conditions
ID = –1 mA, VGS = 0 V
VGS = ±20 V, VDS = 0 V
VDS = –100 V, VGS = 0 V
ID = –1 mA, VDS = –10 V
ID = –10 A, VGS = –10 V
ID = –10 A, VGS = – 4 V
ID = –10 A, VGS = –10 V
ID = –10 A, VDS = –10 V
—
±0.1
–0.1
–2.3
0.26
0.32
–2.6
—
µA
mA
V
IDSS
—
—
VGS(th)
rDS(ON)
rDS(ON)
VDS(ON)
| yfs |
Ciss
Coss
Crss
td(on)
–1.3
—
–1.8
0.20
0.25
–2.0
10.3
2360
198
99
Ω
—
Ω
—
V
—
S
—
—
pF
pF
pF
ns
ns
ns
s
VDS = –10 V, VGS = 0 V,
f = 1MHz
Output capacitance
—
—
Reverse transfer capacitance
Turn-on delay time
—
—
—
13
—
VDD = –50 V, ID = –10 A,
GS = –10 V,
RGEN = RGS = 50 Ω
V
Rise time
tr
—
30
—
Turn-off delay time
td(off)
—
139
74
—
Fall time
tf
—
—
Source-drain voltage
VSD
—
–1.0
—
IS = –10 A, VGS = 0 V
hannel to case
Thermal resistance
Rth(ch-c)
trr
—
Reverse recovery time
—
100
–20 A, dis/dt = 100 A/µs
Rev.2.00 Aug 07, 2006 page 2 of 6
FX20ASJ-2
Performance Curves
Power Dissipation Derating Curve
Maximum Safe Operating Area
–2
50
40
30
20
10
0
–102
–7
–5
–3
–2
–101
–7
–5
DC
–3
–2
–100
–7
–5
Tc = 25°C
Single Pulse
–3
–2
0
1
2
–2 –3 –5–7 –2
–10
–2 –3 –5–7
–10
–2 –3 –5–7
–10
0
50
100
150
200
Case Temperature Tc (°C)
Drain-Source Voltage VDS (V)
cteristics (Typical)
Output Characteristics (Typical)
–
50
VGS =
–10V
Tc = 25°C
Pulse Test
–5V
–4V
–8V
–6V
–
40
Tc = 25°C
Pulse Test
V
–5V
–
30
–
–
20
–3V
–10
–4
PD = 35W
0
0
–
10
–
20
0
0
–4
–8
–12
–16
–20
Drain-So
Drain-Source Voltage VDS (V)
On-State Resistance vs.
Drain Current (Typical)
On-S
Gate-Source cal)
–50
–40
–30
–20
–10
0
0.5
0.4
0.3
0.2
0.1
0
Tc = 25°C
Pulse Test
V
GS =
–4V
–10V
ID =
–40A
Tc = 25°C
Pulse Test
–20A
–10A
–2
0
–4
–6
–8
–10
–10–1 –2 –3 –5–7–100 –2 –3 –5–7–101 –2 –3 –5–7–102
Gate-Source Voltage VGS (V)
Drain Current ID (A)
Rev.2.00 Aug 07, 2006 page 3 of 6
FX20ASJ-2
Forward Transfer Admittance vs.
Drain Current (Typical)
Transfer Characteristics (Typical)
–50
2
Tc = 25°C
V
= –10V
DS
Pulse Test
101
7
–40
–30
–20
–10
0
5
4
3
Tc = 25°C 75°C
125°C
2
100
7
V
= –10V
DS
Pulse Test
5
4
3
2
0
–2
–4
–6
–8
–10
–7–100
–2 –3 –4–5 –7–101
–2 –3 –4–5 –7
Gate-Source Voltage VGS (V)
Drain Current ID (A)
Capacitance vs.
Drain-Source Voltage (Typical)
haracteristics (Typical)
3
2
(off)
Ciss
103
7
t
t
f
Tch = 25°C
f = 1MHz
5
4
V
GS
= 0V
r
3
2
td(on)
Coss
102
7
01
7
Tch = 25°C
V
DD
= –50V
= –10V
= R
V
GS
5
4
5
4
R
GEN
= 50Ω
GS
3
3
–3 –5–7–100 –2 –3 –5–7–1
–5 –7–100
–2 –3 –4–5 –7–101
–2 –3 –4–5
Drain-Sourc
Drain Current ID (A)
Gat
Gate
Source-Drain Diode Forward
Characteristics (Typical)
–10
–8
–6
–4
–2
0
–50
–40
–30
–20
–10
0
V
= 0V
GS
Pulse Test
Tch = 25°C
= –20A
I
D
V
–20V
DS =
–50V
TC =
–80V
25°C
75°C
125°C
0
10
20
30
40
50
0
–0.4
–0.8
–1.2
–1.6
–2.0
Gate Charge Qg (nC)
Source-Drain Voltage VSD (V)
Rev.2.00 Aug 07, 2006 page 4 of 6
FX20ASJ-2
Threshold Voltage vs.
Channel Temperature (Typical)
On-State Resistance vs.
Channel Temperature (Typical)
101
7
–4.0
–3.2
–2.4
–1.6
–0.8
0
V
= –10V
V
= –10V
GS
= –10A
Pulse Test
DS
I = –1mA
D
I
D
5
4
3
2
100
7
5
4
3
2
10–1
–50
0
50
100
150
–50
0
50
100
150
Channel Temperature Tch (°C)
Channel Temperature Tch (°C)
Breakdown Voltage vs.
Channel Temperature (Typical)
Transiepedance Characteristics
1.4
1.2
1.0
0.8
0.6
0.4
101
7
5
V
= 0V
GS
= –1mA
D
I
D
3
2
.01
Single Pulse
P
DM
tw
T
tw
T
D
=
–50
0
50
10–42 3 5710–32 3 5710–22 3 5710–12 3 57100 2 3 57101 2 3 57102
Pulse Width tw (s)
Channel Tempe
Switching Time
Switching Waveform
Vin
Vout
Monitor
Vin Monitor
10%
D.U.T.
90%
R
GEN
R
L
90%
90%
V
DD
R
GS
10%
10%
Vout
t
t
t
t
f
d(on)
r
d(off)
Rev.2.00 Aug 07, 2006 page 5 of 6
FX20ASJ-2
Package Dimensions
Package Name
MP-3A
JEITA Package Code
SC-63
RENESAS Code
PRSS0004ZA-A
Previous Code
MASS[Typ.]
0.32g
Unit: mm
2.3
6.6
5.3 0.2
0.5 0.2
0.1 0.1
0.76 0.2
0.76
0.5
2.3 0.2
Order Code
Standard order
code example
Lead form
Standard p
Standard order code
Surface-mounted type Taping
Surface-mounted type
Plas
(
Note: Please confirm thhipping in detail.
Type name – T +Direction (1 or 2) +3
FX20ASJ-2-T13
FX20ASJ-2
5 Type name
Rev.2.00 Aug 07, 2006 page 6 of 6
Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
Keep safety first in your circuit designs!
1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble
may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage.
Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary
circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap.
Notes regarding these materials
1. These materials are intended as a reference to assist our customers in the selection of the Renesas TechnCorp. product best suited to the customer's
application; they do not convey any license under any intellectual property rights, or any other rights, beloRenesas Technology Corp. or a third party.
2. Renesas Technology Corp. assumes no responsibility for any damage, or infringement of any third-parginating in the use of any product data,
diagrams, charts, programs, algorithms, or circuit application examples contained in these materials.
3. All information contained in these materials, including product data, diagrams, charts, programs ants information on products at the time of
publication of these materials, and are subject to change by Renesas Technology Corp. without ovements or other reasons. It is
therefore recommended that customers contact Renesas Technology Corp. or an authorized Rduct distributor for the latest product
information before purchasing a product listed herein.
The information described here may contain technical inaccuracies or typographical errors
Renesas Technology Corp. assumes no responsibility for any damage, liability, or other rs.
Please also pay attention to information published by Renesas Technology Corp. by vhnology Corp. Semiconductor
home page (http://www.renesas.com).
4. When using any or all of the information contained in these materials, including prnd algorithms, please be sure to
evaluate all information as a total system before making a final decision on the as. Renesas Technology Corp. assumes
no responsibility for any damage, liability or other loss resulting from the inform
5. Renesas Technology Corp. semiconductors are not designed or manufactued under circumstances in which human life
is potentially at stake. Please contact Renesas Technology Corp. or an aduct distributor when considering the use of a
product contained herein for any specific purposes, such as apparatus edical, aerospace, nuclear, or undersea repeater
use.
6. The prior written approval of Renesas Technology Corp. is necessaart these materials.
7. If these products or technologies are subject to the Japanese exprted under a license from the Japanese government and
cannot be imported into a country other than the approved des
Any diversion or reexport contrary to the export control laws y of destination is prohibited.
8. Please contact Renesas Technology Corp. for further detantained therein.
RENESAS SALES OFFICES
http://www.renesas.com
Refer to "http://www.renesas.com/d information.
Renesas Technology Americ
450 Holger Way, San Jose,
Tel: <1> (408) 382-7500,
Renesas Technology Eur
Dukes Meadow, Millboard Romshire, SL8 5FH, U.K.
Tel: <44> (1628) 585-100, Fax
Renesas Technology (Shanghai)
Unit 204, 205, AZIACenter, No.1233 Lg Rd, Pudong District, Shanghai, China 200120
Tel: <86> (21) 5877-1818, Fax: <86> (287-7898
Renesas Technology Hong Kong Ltd.
7th Floor, North Tower, World Finance Centre, Harbour City, 1 Canton Road, Tsimshatsui, Kowloon, Hong Kong
Tel: <852> 2265-6688, Fax: <852> 2730-6071
Renesas Technology Taiwan Co., Ltd.
10th Floor, No.99, Fushing North Road, Taipei, Taiwan
Tel: <886> (2) 2715-2888, Fax: <886> (2) 2713-2999
Renesas Technology Singapore Pte. Ltd.
1 Harbour Front Avenue, #06-10, Keppel Bay Tower, Singapore 098632
Tel: <65> 6213-0200, Fax: <65> 6278-8001
Renesas Technology Korea Co., Ltd.
Kukje Center Bldg. 18th Fl., 191, 2-ka, Hangang-ro, Yongsan-ku, Seoul 140-702, Korea
Tel: <82> (2) 796-3115, Fax: <82> (2) 796-2145
Renesas Technology Malaysia Sdn. Bhd
Unit 906, Block B, Menara Amcorp, Amcorp Trade Centre, No.18, Jalan Persiaran Barat, 46050 Petaling Jaya, Selangor Darul Ehsan, Malaysia
Tel: <603> 7955-9390, Fax: <603> 7955-9510
© 2006. Renesas Technology Corp., All rights reserved. Printed in Japan.
Colophon .6.0
相关型号：
FX20KM-03
Power Field-Effect Transistor, 20A I(D), 30V, 0.15ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, COMPACT, TO-220FN, 3 PIN
POWEREX
FX20KM-06
Power Field-Effect Transistor, 20A I(D), 60V, 0.12ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, COMPACT, TO-220FN, 3 PIN
POWEREX
FX20KM-3
Power Field-Effect Transistor, 20A I(D), 150V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, COMPACT, TO-220FN, 3 PIN
POWEREX
©2020 ICPDF网 联系我们和版权申明