BCR8KM-14LC-A8 [RENESAS]
Triac Medium Power Use; 三端双向可控硅中功率使用
| 型号： | BCR8KM-14LC-A8 |
| 厂家： | 
RENESAS TECHNOLOGY CORP |
| 描述： | Triac Medium Power Use |
| 文件： | 总8页 (文件大小：125K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BCR8KM-14LC
Triac
Medium Power Use
REJ03G0334-0200
Rev.2.00
Dec.17.2004
Features
•
•
•
•
IT (RMS) : 8 A
VDRM : 700 V
•
The product guaranteed maximum junction
temperature 150°C.
Insulated Type
Planar Passivation Type
•
•
I
FGTI , IRGTI, IRGT : 50 mA
Viso : 2000 V
Outline
TO-220FN
2
1. T Terminal
1
2. T Terminal
2
3. Gate Terminal
3
1
1
2
3
Applications
Motor control, heater control
Maximum Ratings
Parameter
Voltage class
Symbol
Unit
14
Repetitive peak off-state voltageNote1
Non-repetitive peak off-state voltageNote1
VDRM
VDSM
700
800
V
V
Rev.2.00, Dec.17.2004, page 1 of 7
BCR8KM-14LC
Parameter
Symbol
Ratings
Unit
Conditions
RMS on-state current
Surge on-state current
I2t for fusing
IT (RMS)
8
A
Commercial frequency, sine full wave
360° conduction, Tc = 98°C
ITSM
I2t
48
A
60Hz sinewave 1 full cycle, peak value,
non-repetitive
9.5
A2s
Value corresponding to 1 cycle of half
wave 60Hz, surge on-state current
Peak gate power dissipation
Average gate power dissipation
Peak gate voltage
PGM
PG (AV)
VGM
IGM
5
W
W
V
0.5
10
2
Peak gate current
A
Junction temperature
Storage temperature
Mass
Tj
– 40 to +150
– 40 to +150
2.0
°C
°C
g
Tstg
—
Typical value
Isolation voltage
Viso
2000
V
Ta = 25°C, AC 1 minute,
T1·T2·G terminal to case
Notes: 1. Gate open.
Electrical Characteristics
Parameter
Repetitive peak off-state current
On-state voltage
Symbol
IDRM
Min.
—
Typ.
Max.
2.0
Unit
mA
V
Test conditions
—
—
Tj = 125°C, VDRM applied
VTM
—
2.0
Tc = 25°C, ITM = 12 A,
Instantaneous measurement
Gate trigger voltageNote2
Ι
ΙΙ
ΙΙΙ
Ι
VFGT
—
—
—
—
—
—
0.2
—
10
—
—
—
—
—
—
—
—
—
1.5
1.5
1.5
50
50
50
—
V
V
Tj = 25°C, VD = 6 V, RL = 6 Ω,
RG = 330 Ω
Ι
VRGT
Ι
VRGT
V
ΙΙΙ
Gate trigger currentNote2
IFGT
mA
mA
mA
V
Tj = 25°C, VD = 6 V, RL = 6 Ω,
RG = 330 Ω
Ι
ΙΙ
ΙΙΙ
IRGT
Ι
IRGT
ΙΙΙ
Gate non-trigger voltage
Thermal resistance
VGD
Tj = 125°C, VD = 1/2 VDRM
Junction to caseNote3
Tj = 125°C
Rth (j-c)
(dv/dt)c
3.9
—
°C/W
V/µs
Critical-rate of rise of off-state
commutating voltageNote4
Notes: 2. Measurement using the gate trigger characteristics measurement circuit.
3. The contact thermal resistance Rth (c-f) in case of greasing is 0.5°C/W.
4. Test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below.
Commutating voltage and current waveforms
Test conditions
(inductive load)
1. Junction temperature
Time
Supply Voltage
Tj = 125°C
(di/dt)c
2. Rate of decay of on-state commutating current
(di/dt)c = – 4 A/ms
Time
Time
Main Current
Main Voltage
3. Peak off-state voltage
VD = 400 V
(dv/dt)c
V
D
Rev.2.00, Dec.17.2004, page 2 of 7
BCR8KM-14LC
Performance Curves
Maximum On-State Characteristics
Rated Surge On-State Current
2
10
60
50
40
30
20
10
0
7
5
Tj = 25°C
3
2
1
10
7
5
3
2
0
10
7
5
3
2
-1
10
0.6 1.0 1.4 1.8 2.2 2.6 3.0 3.4 3.8
100
2
3
5
7 101
2
3
5
7 102
On-State Voltage (V)
Conduction Time (Cycles at 60 Hz)
Gate Trigger Current vs.
Junction Temperature
Gate Characteristics (I, II and III)
2
103
7
10
7
Typical Example
5
5
3
2
IRGTIII
VGM = 10 V
3
2
1
10
PGM =5 W
7
5
102
VGT = 1.5 V
PG(AV) = 0.5 W
3
2
IGM = 2 A
IFGTI
7
5
0
10
IFGT I
IRGT II
IRGT III
7
5
3
2
IRGTI
3
2
VGD = 0.2 V
101
-60 -40 -20
-1
10
1
2
3
4
10
2
3
5 710
2
3
5 7 10
2
3
5 7 10
0
20 40 60 80 100 120 140 160
Gate Current (mA)
Junction Temperature (°C)
Gate Trigger Voltage vs.
Junction Temperature
Maximum Transient Thermal Impedance
Characteristics (Junction to case)
2
3
10
2
3
5 710
2
3
5
103
7
4.0
Typical Example
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
5
3
2
102
7
5
3
2
101
-60 -40 -20
-1
0
1
2
0
20 40 60 80 100 120 140 160
10
2
3
5 7 10
2
3
5 7 10
2
3
5 710
Junction Temperature (°C)
Conduction Time (Cycles at 60 Hz)
Rev.2.00, Dec.17.2004, page 3 of 7
BCR8KM-14LC
Maximum Transient Thermal Impedance
Characteristics (Junction to ambient)
Maximum On-State Power Dissipation
3
10
16
7
5
No Fins
14
12
10
8
3
2
2
10
360° Conduction
Resistive,
inductive loads
7
5
3
2
1
10
7
5
6
3
2
0
10
4
7
5
2
3
2
-1
0
10
1
2
3
4
5
10 2 3 5 710 2 3 5 710 2 3 5 710 2 3 5 710
0
2
4
6
8
10
Conduction Time (Cycles at 60 Hz)
RMS On-State Current (A)
Allowable Case Temperature vs.
RMS On-State Current
Allowable Ambient Temperature vs.
RMS On-State Current
160
140
120
100
80
160
140
120
100
80
Curves apply regardless
of conduction angle
All fins are black painted
aluminum and greased
120 × 120 × t2.3
100 × 100 × t2.3
60 × 60 × t2.3
60
60
Curves apply
regardless of
conduction angle
Resistive,
inductive loads
Natural convection
40
40
360° Conduction
Resistive,
inductive loads
20
20
0
0
0
2
4
6
8
10 12 14 16
0
2
4
6
8
10 12 14 16
RMS On-State Current (A)
RMS On-State Current (A)
Allowable Ambient Temperature vs.
RMS On-State Current
Repetitive Peak Off-State Current vs.
Junction Temperature
6
10
160
140
120
100
80
7
5
Natural convection
No Fins
Curves apply regardless
of conduction angle
Resistive, inductive loads
Typical Example
3
2
5
10
7
5
3
2
4
10
7
5
60
3
2
3
40
10
7
5
20
3
2
2
0
10
-60 -40 -20
0
20 40 60 80 100 120 140 160
0.0
0.5
1.0
1.5
2.0
2.5
3.0
RMS On-State Current (A)
Junction Temperature (°C)
Rev.2.00, Dec.17.2004, page 4 of 7
BCR8KM-14LC
Holding Current vs.
Junction Temperature
Latching Current vs.
Junction Temperature
3
103
7
10
7
Typical Example
–
, G
Typical Example
+
T
2
Distribution
5
3
2
5
3
2
2
10
7
5
3
2
102
7
1
5
10
7
5
3
2
3
2
+
–
+
, G
, G
T
T
2
Typical Example
–
2
101
0
10
-60 -40 -20
0
20 40 60 80 100 120 140 160
-60 -40 -20
0
20 40 60 80 100 120 140 160
Junction Temperature (°C)
Junction Temperature (°C)
Breakover Voltage vs.
Junction Temperature
Breakover Voltage vs.
Rate of Rise of Off-State Voltage (Tj = 125°C)
160
140
120
100
80
160
Typical Example
Typical Example
Tj = 125°C
140
120
100
80
III Quadrant
60
60
I Quadrant
40
40
20
20
0
0
1
2
3
10 2 3 5 710 2 3 5 710 2 3 5 710
4
-60 -40 -20
0
20 40 60 80 100 120 140 160
Junction Temperature (°C)
Rate of Rise of Off-State Voltage (V/µs)
Breakover Voltage vs.
Rate of Rise of Off-State Voltage (Tj = 150°C)
Commutation Characteristics (Tj = 125°C)
7
160
Time
Main Voltage
Typical Example
Tj = 150°C
5
(dv/dt)c
V
D
140
120
100
80
Main Current
(di/dt)c
Time
3
2
I
T
τ
III Quadrant
101
7
5
Minimum
Characteristics Value
I Quadrant
60
3
2
Typical Example
Tj = 125°C
40
I Quadrant
I
= 4 A
τ = 500 ms
T
III Quadrant
20
100
7
100
V
= 200 V
D
f = 3 Hz
0
2
3
5 7 101
2
3
5 7 102
1
10 2 3 5 710 2 3 5 710 2 3 5 710
2
3
4
Rate of Decay of On-State
Commutating Current (A/ms)
Rate of Rise of Off-State Voltage (V/µs)
Rev.2.00, Dec.17.2004, page 5 of 7
BCR8KM-14LC
Gate Trigger Current vs.
Gate Current Pulse Width
Commutation Characteristics (Tj = 150°C)
103
7
7
5
Typical Example
IRGTIII
IRGTI
5
I Quadrant
3
2
3
2
IFGTI
101
7
III Quadrant
102
7
5
Typical Example
Tj = 150°C
5
3
2
Time
Main Voltage
(dv/dt)c
Main Current
I = 4 A
T
τ = 500 ms
3
2
V
D
(di/dt)c
Time
I
T
V
= 200 V
D
f = 3 Hz
100
7
100
τ
101
100
2
3
5 7 101
2
3
5 7 102
2
3
5 7 101
2
3
5 7 102
Rate of Decay of On-State
Commutating Current (A/ms)
Gate Current Pulse Width (µs)
Gate Trigger Characteristics Test Circuits
6Ω
6Ω
A
A
6 V
6 V
330 Ω
330 Ω
V
V
Test Procedure I
Test Procedure II
6Ω
A
6 V
330 Ω
V
Test Procedure III
Rev.2.00, Dec.17.2004, page 6 of 7
BCR8KM-14LC
Package Dimensions
TO-220FN
EIAJ Package Code
Mass (g) (reference value)
2.0
Lead Material
Cu alloy
JEDEC Code
2.8 0.2
10 0.3
φ 3.2 0.2
1.1 0.2
1.1 0.2
0.75 0.15
2.54 0.25
0.75 0.15
2.54 0.25
Dimension in Millimeters
Min Typ Max
Symbol
A
A
A
b
1
2
D
E
e
x
Note 1) The dimensional figures indicate representative values unless
otherwise the tolerance is specified.
y
y1
ZD
ZE
Order Code
Standard order
code example
Lead form
Standard packing
Quantity
Standard order code
Straight type
Lead form
Tube
Tube
50 Type name
50 Type name – Lead forming code
BCR8KM-14LC
BCR8KM-14LC-A8
Note : Please confirm the specification about the shipping in detail.
Rev.2.00, Dec.17.2004, page 7 of 7
Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
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