BCR8LM-12LA-A8#B00 [RENESAS]
TRIAC;
| 型号： | BCR8LM-12LA-A8#B00 |
| 厂家： | 
RENESAS TECHNOLOGY CORP |
| 描述： | TRIAC 栅 三端双向交流开关 栅极 |
| 文件： | 总7页 (文件大小：132K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Preliminary Datasheet
BCR8LM-12LA
R07DS0683EJ0100
Rev.1.00
600V - 8A - Triac
Medium Power Use
Feb 25, 2013
Features
IT (RMS) : 8 A
DRM : 600 V
FGTI, IRGTI, IRGT III : 10 mA
iso : 1800V
Insulated Type
Planar Type
UL Recognized : File No. E223904
V
I
V
Outline
RENESAS Package code: PRSS0003AF-A)
Package name: TO-220FL)
(
2
1. T1 Terminal
2. T2 Terminal
3. Gate Terminal
3
1
1
2
3
Applications
Switching mode power supply, washing machine, motor control, heater control, and other general purpose AC power
control applications
Maximum Ratings
Voltage class
Parameter
Symbol
Unit
12
Repetitive peak off-state voltageNote1
Non-repetitive peak off-state voltageNote1
VDRM
VDSM
600
720
V
V
Parameter
Symbol
Ratings
Unit
Conditions
RMS on-state current
IT (RMS)
ITSM
I2t
8
A
Commercial frequency, sine full wave
360conduction, Tc = 82C
Surge on-state current
I2t for fusion
80
26
A
60 Hz sine wave 1 full cycle, peak value,
non-repetitive
A2s
Value corresponding to 1 cycle of half
wave 60 Hz, surge on-state current
Peak gate power dissipation
Average gate power dissipation
Peak gate voltage
PGM
PG (AV)
VGM
IGM
5
W
W
V
0.5
10
2
Peak gate current
A
Junction Temperature
Storage temperature
Mass
Tj
–40 to +125
–40 to +125
1.5
C
C
g
Tstg
—
Typical value
Isolation voltage Note4
Viso
1800
V
Ta = 25C, AC 1 minute,
T1 T2 G terminal to case
R07DS0683EJ0100 Rev.1.00
Feb 25, 2013
Page 1 of 6
BCR8LM-12LA
Preliminary
Electrical Characteristics
Parameter
Repetitive peak off-state current
On-state voltage
Symbol
IDRM
Min.
—
Typ.
—
Max.
2.0
Unit
mA
V
Test conditions
Tj = 125C, VDRM applied
VTM
—
—
1.6
Tc = 25C, ITM = 12 A,
instantaneous measurement
Holding current
IH
—
—
—
—
—
—
—
10
—
—
—
—
—
—
—
1.5
1.5
1.5
10
mA
V
Tj = 25C, VD = 12 V, RGT1 =∞
Gate trigger voltage Note2
VFGT
Tj = 25C, VD = 6 V, RL = 6 ,
RG = 330
VRGT
V
VRGT
V
Gate trigger current Note2
IFGT
mA
mA
mA
Tj = 25C, VD = 6 V, RL = 6 ,
RG = 330
IRGT
10
IRGT
10
Gate non-trigger voltage
Thermal resistance
VGD
0.2
—
—
—
—
V
Tj = 125C, VD = 1/2 VDRM
Junction to caseNote3
Rth (j-c)
4.3
C/W
Notes: 1. Gate open.
2. Measurement using the gate trigger characteristics measurement circuit.
3. The contact thermal resistance Rth (c-f) in case of greasing is 0.5C/W.
4. Make sure that your finished product containing this device meets your safe isolation requirements.
For safety, it is advisable that heatsink is electrically floating.
R07DS0683EJ0100 Rev.1.00
Feb 25, 2013
Page 2 of 6
BCR8LM-12LA
Preliminary
Performance Curves
Maximum On-State Characteristics
Rated Surge On-State Current
102
101
100
100
80
60
40
20
0
Tj = 150°C
Tj = 25°C
0
1
2
3
4
100
101
102
On-State Voltage (V)
Conduction Time (Cycles at 60Hz)
Gate Trigger Current vs.
Junction Temperature
Gate Characteristics (I, II and III)
103
102
101
Typical Example
V
= 10V
P
= 0.5W
GM
GT
G(AV)
101
P
= 5W
GM
I
= 2A
GM
I
RGT III
V
= 1.5V
100
I
, I
RGT I FGT I
I
10−1
I , I
RGT I RGT III
FGT I
V
= 0.2V
GD
101
102
103
104
–40
0
40
80
120
160
Gate Current (mA)
Junction Temperature (°C)
Gate Trigger Voltage vs.
Junction Temperature
Maximum Transient Thermal Impedance
Characteristics (Junction to case)
102
103
104
103
102
101
5
Typical Example
4
3
2
1
0
10−1
100
101
102
–40
0
40
80
120
160
Junction Temperature (°C)
Conduction Time (Cycles at 60Hz)
R07DS0683EJ0100 Rev.1.00
Feb 25, 2013
Page 3 of 6
BCR8LM-12LA
Preliminary
Maximum Transient Thermal Impedance
Characteristics (Junction to ambient)
Maximum On-State Power Dissipation
16
103
102
No Fins
14
12
10
8
360° Conduction
Resistive,
inductive loads
101
6
100
4
2
10−1
0
101
102
103
104
105
0
2
4
6
8
10 12 14 16
Conduction Time (Cycles at 60Hz)
RMS On-State Current (A)
Allowable Case Temperature vs.
RMS On-State Current
Allowable Ambient Temperature vs.
RMS On-State Current
160
140
120
100
80
160
140
120
100
80
Curves apply regardless
of conduction angle
All fins are black painted
aluminum and greased
120 120 t2.3
100 100 t2.3
60 60 t2.3
60
60
Curves apply
regardless of
40
40
conduction angle
Resistive,
inductive loads
Natural convection
360° Conduction
Resistive,
inductive loads
20
20
0
0
0
0
2
4
6
8
10 12 14 16
2
4
6
8
10 12 14 16
RMS On-State Current (A)
RMS On-State Current (A)
Allowable Ambient Temperature vs.
RMS On-State Current
Repetitive Peak Off-State Current vs.
Junction Temperature
160
140
120
100
80
103
102
Natural convection
No Fins
Curves apply regardless
of conduction angle
Resistive, inductive loads
Typical Example
101
60
100
40
20
10−1
0
0
0.5 1.0 1.5 2.0 2.5 3.0
RMS On-State Current (A)
–40
0
40
80
120
160
Junction Temperature (°C)
R07DS0683EJ0100 Rev.1.00
Feb 25, 2013
Page 4 of 6
BCR8LM-12LA
Preliminary
Breakover Voltage vs.
Junction Temperature
Holding Current vs.
Junction Temperature
103
160
140
120
100
80
Typical Example
Typical Example
102
60
40
20
101
−40
0
−40
0
40
80
120
160
0
40
80
120
160
Junction Temperature (°C)
Junction Temperature (°C)
Breakover Voltage vs.
Rate of Rise of Off-State Voltage (Tj = 125°C)
Gate Trigger Current vs.
Gate Current Pulse Width
103
102
101
160
Typical Example
Tj = 125°C
140
120
100
80
I
FGT I
I
RGT I
I
RGT III
60
III Quadrant
40
I Quadrant
20
0
101
102
103
104
100
101
Gate Current Pulse Width (μs)
102
Rate of Rise of Off-State Voltage (V/μs)
Gate Trigger Characteristics Test Circuits
6Ω
6Ω
A
A
6V
6V
330Ω
330Ω
V
V
Test Procedure I
6Ω
Test Procedure II
A
6V
330Ω
V
Test Procedure III
R07DS0683EJ0100 Rev.1.00
Feb 25, 2013
Page 5 of 6
BCR8LM-12LA
Preliminary
Package Dimensions
Package Name
TO-220FL
JEITA Package Code
RENESAS Code
PRSS0003AF-A
Previous Code
TO-220FL
MASS[Typ.]
1.5g
Unit: mm
⎯
10.0 0.3
2.8 0.2
φ 3.2 0.2
1.15 0.2
1.15 0.2
0.75 0.15
2.54 0.25
0.40 0.15
2.54 0.25
Ordering Information
Orderable Part Number
BCR8LM-12LA#B00
BCR8LM-12LA-A8#B00
Packing
Quantity
50 pcs. Straight type
50 pcs. A8 Lead form
Remark
Tube
Tube
Note: Please confirm the specification about the shipping in detail.
R07DS0683EJ0100 Rev.1.00
Feb 25, 2013
Page 6 of 6
SALES OFFICES
http://www.renesas.com
Refer to "http://www.renesas.com/" for the latest and detailed information.
Renesas Electronics America Inc.
2880 Scott Boulevard Santa Clara, CA 95050-2554, U.S.A.
Tel: +1-408-588-6000, Fax: +1-408-588-6130
Renesas Electronics Canada Limited
1101 Nicholson Road, Newmarket, Ontario L3Y 9C3, Canada
Tel: +1-905-898-5441, Fax: +1-905-898-3220
Renesas Electronics Europe Limited
Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K
Tel: +44-1628-651-700, Fax: +44-1628-651-804
Renesas Electronics Europe GmbH
Arcadiastrasse 10, 40472 Düsseldorf, Germany
Tel: +49-211-65030, Fax: +49-211-6503-1327
Renesas Electronics (China) Co., Ltd.
7th Floor, Quantum Plaza, No.27 ZhiChunLu Haidian District, Beijing 100083, P.R.China
Tel: +86-10-8235-1155, Fax: +86-10-8235-7679
Renesas Electronics (Shanghai) Co., Ltd.
Unit 204, 205, AZIA Center, No.1233 Lujiazui Ring Rd., Pudong District, Shanghai 200120, China
Tel: +86-21-5877-1818, Fax: +86-21-6887-7858 / -7898
Renesas Electronics Hong Kong Limited
Unit 1601-1613, 16/F., Tower 2, Grand Century Place, 193 Prince Edward Road West, Mongkok, Kowloon, Hong Kong
Tel: +852-2886-9318, Fax: +852 2886-9022/9044
Renesas Electronics Taiwan Co., Ltd.
13F, No. 363, Fu Shing North Road, Taipei, Taiwan
Tel: +886-2-8175-9600, Fax: +886 2-8175-9670
Renesas Electronics Singapore Pte. Ltd.
80 Bendemeer Road, Unit #06-02 Hyflux Innovation Centre Singapore 339949
Tel: +65-6213-0200, Fax: +65-6213-0300
Renesas Electronics Malaysia Sdn.Bhd.
Unit 906, Block B, Menara Amcorp, Amcorp Trade Centre, No. 18, Jln Persiaran Barat, 46050 Petaling Jaya, Selangor Darul Ehsan, Malaysia
Tel: +60-3-7955-9390, Fax: +60-3-7955-9510
Renesas Electronics Korea Co., Ltd.
11F., Samik Lavied' or Bldg., 720-2 Yeoksam-Dong, Kangnam-Ku, Seoul 135-080, Korea
Tel: +82-2-558-3737, Fax: +82-2-558-5141
© 2013 Renesas Electronics Corporation. All rights reserved.
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