BCR8KM-16LA-A8 [RENESAS]
Triac Medium Power Use; 三端双向可控硅中功率使用型号: | BCR8KM-16LA-A8 |
厂家: | RENESAS TECHNOLOGY CORP |
描述: | Triac Medium Power Use |
文件: | 总8页 (文件大小:139K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
BCR8KM-16LA
Triac
Medium Power Use
REJ03G0336-0100
Rev.1.00
Aug.20.2004
Features
•
•
•
•
IT (RMS) : 8 A
VDRM : 800 V
•
•
•
Insulated Type
Planar Passivation Type
UL Recognized : Yellow Card No. E223904
File No. E80271
I
FGTI , IRGTI, IRGT : 30 mA
Ⅲ
Viso : 2000 V
Outline
TO-220FN
2
1. T Terminal
1
2. T Terminal
2
3. Gate Terminal
3
1
1
2
3
Applications
Switching mode power supply, washing machine, motor control, heater control, and other general purpose control
applications
Maximum Ratings
Voltage class
Parameter
Symbol
Unit
16
Repetitive peak off-state voltageNote1
Non-repetitive peak off-state voltageNote1
VDRM
VDSM
800
960
V
V
Rev.1.00, Aug.20.2004, page 1 of 7
BCR8KM-16LA
Parameter
Symbol
Ratings
Unit
Conditions
RMS on-state current
Surge on-state current
I2t for fusing
IT (RMS)
8
A
Commercial frequency, sine full wave
360° conduction, Tc = 89°C
ITSM
I2t
80
26
A
60Hz sinewave 1 full cycle, peak value,
non-repetitive
A2s
Value corresponding to 1 cycle of half
wave 60Hz, surge on-state current
Peak gate power dissipation
Average gate power dissipation
Peak gate voltage
PGM
PG (AV)
VGM
IGM
5
W
W
V
0.5
10
2
Peak gate current
A
Junction temperature
Storage temperature
Mass
Tj
– 40 to +125
– 40 to +125
2.0
°C
°C
g
Tstg
—
Typical value
Isolation voltage
Viso
2000
V
Ta = 25°C, AC 1 minute,
T1·T2·G terminal to case
Notes: 1. Gate open.
Electrical Characteristics
Parameter
Repetitive peak off-state current
On-state voltage
Symbol
IDRM
Min.
—
Typ.
—
Max.
Unit
Test conditions
2.0
1.6
mA
V
Tj = 125°C, VDRM applied
VTM
—
—
Tc = 25°C, ITM = 12 A,
Instantaneous measurement
Gate trigger voltageNote2
Ι
ΙΙ
ΙΙΙ
Ι
VFGT
—
—
—
—
—
—
0.2
—
10
—
—
—
—
—
—
—
—
—
1.5
1.5
1.5
30
30
30
—
V
V
Tj = 25°C, VD = 6 V, RL = 6 Ω,
RG = 330 Ω
Ι
VRGT
Ι
VRGT
V
ΙΙΙ
Gate trigger currentNote2
IFGT
mA
mA
mA
V
Tj = 25°C, VD = 6 V, RL = 6 Ω,
RG = 330 Ω
Ι
ΙΙ
ΙΙΙ
IRGT
Ι
IRGT
ΙΙΙ
Gate non-trigger voltage
Thermal resistance
VGD
Tj = 125°C, VD = 1/2 VDRM
°C/W Junction to caseNote3
Rth (j-c)
(dv/dt)c
3.6
—
Critical-rate of rise of off-state
commutating voltageNote4
V/µs
Tj = 125°C
Notes: 2. Measurement using the gate trigger characteristics measurement circuit.
3. The contact thermal resistance Rth (c-f) in case of greasing is 0.5°C/W.
4. Test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below.
Commutating voltage and current waveforms
Test conditions
(inductive load)
1. Junction temperature
Time
Supply Voltage
Tj = 125°C
(di/dt)c
2. Rate of decay of on-state commutating current
(di/dt)c = – 4 A/ms
Time
Time
Main Current
Main Voltage
3. Peak off-state voltage
VD = 400 V
(dv/dt)c
V
D
Rev.1.00, Aug.20.2004, page 2 of 7
BCR8KM-16LA
Performance Curves
Maximum On-State Characteristics
Rated Surge On-State Current
102
7
5
100
90
80
70
60
50
40
30
20
10
0
3
2
Tj = 125°C
101
7
5
3
2
Tj = 25°C
100
7
5
3
2
10–1
0.6 1.0 1.4 1.8 2.2 2.6 3.0 3.4 3.8
100
2
3 4 5 7 101
2
3 4 5 7 102
On-State Voltage (V)
Conduction Time (Cycles at 60Hz)
Gate Trigger Current vs.
Junction Temperature
Gate Characteristics (I, II and III)
103
7
3
2
Typical Example
V
GM
= 10V
P
G(AV)
= 0.5W
5
4
3
P
= 5W
101
7
5
GM
I , I
RGT I RGT III
I
= 2A
GM
2
3
2
V
= 1.5V
GT
102
7
100
7
I
FGT I
5
5
4
3
3
2
I
I , I
RGT I RGT III
FGT I
V
= 0.2V
GD
2
10–1
7
5
101
101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104
–60–40–20 0 20 40 60 80 100120140
Gate Current (mA)
Junction Temperature (°C)
Gate Trigger Voltage vs.
Junction Temperature
Maximum Transient Thermal Impedance
Characteristics (Junction to case)
102 2 3 5 7 103 2 3 5
4.0
103
Typical Example
7
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
5
4
3
2
102
7
5
4
3
2
101
10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102
–60–40–20 0 20 40 60 80 100120140
Junction Temperature (°C)
Conduction Time (Cycles at 60Hz)
Rev.1.00, Aug.20.2004, page 3 of 7
BCR8KM-16LA
Maximum Transient Thermal Impedance
Characteristics (Junction to ambient)
Maximum On-State Power Dissipation
103
7
5
16
No Fins
14
12
10
8
3
2
102
7
360° Conduction
Resistive,
inductive loads
5
3
2
101
7
5
6
3
2
100
7
5
4
2
3
2
10–1
0
101 2 3 5 7102 2 3 5 7103 2 3 5 7104 2 3 5 7105
0
2
4
6
8
10 12 14 16
Conduction Time (Cycles at 60Hz)
RMS On-State Current (A)
Allowable Case Temperature vs.
RMS On-State Current
Allowable Ambient Temperature vs.
RMS On-State Current
160
160
140
120
100
80
All fins are black painted
aluminum and greased
Curves apply regardless
of conduction angle
140
120
100
80
120 × 120 × t2.3
100 × 100 × t2.3
60 × 60 × t2.3
60
60
Curves apply
regardless of
40
40
conduction angle
Resistive,
inductive loads
Natural convection
360° Conduction
Resistive,
inductive loads
20
20
0
0
0
2
4
6
8
10 12 14 16
0
2
4
6
8
10 12 14 16
RMS On-State Current (A)
RMS On-State Current (A)
Allowable Ambient Temperature vs.
RMS On-State Current
Repetitive Peak Off-State Current vs.
Junction Temperature
105
7
5
160
140
120
100
80
Natural convection
No Fins
Curves apply regardless
of conduction angle
Resistive, inductive loads
Typical Example
3
2
104
7
5
3
2
60
103
7
5
40
3
2
20
102
0
0
0.5 1.0
1.5 2.0 2.5
3.0
–60–40–20 0 20 40 60 80 100120140
RMS On-State Current (A)
Junction Temperature (°C)
Rev.1.00, Aug.20.2004, page 4 of 7
BCR8KM-16LA
Holding Current vs.
Junction Temperature
Latching Current vs.
Junction Temperature
103
7
103
7
5
4
3
Typical Example
Typical Example
Distribution
5
4
3
2
–
–
, G
T
2
102
–
+
, G
T
2
2
7
5
4
3
102
7
2
101
5
4
3
7
5
4
3
+
+
, G
T
2
2
2
101
100
–40 –20
–60–40–20 0 20 40 60 80 100120140
0
20 40 60 80 100 120 140 160
Junction Temperature (°C)
Junction Temperature (°C)
Breakover Voltage vs.
Junction Temperature
Breakover Voltage vs.
Rate of Rise of Off-State Voltage
160
160
140
120
100
80
Typical Example
Tj = 125°C
Typical Example
140
120
100
80
I Quadrant
III Quadrant
60
60
40
40
20
20
0
0
–60–40–20 0 20 40 60 80 100120140
101 2 3 45 7 102 2 3 45 7 103 2 3 457 104
Junction Temperature (°C)
Rate of Rise of Off-State Voltage (V/µs)
Gate Trigger Current vs.
Gate Current Pulse Width
Commutation Characteristics
102
103
Typical Example
Tj = 125°C
Time
Main Voltage
(dv/dt)c
Main Current
Typical Example
7
7
V
D
I
5
4
3
5
4
3
RGT I
I = 4A
T
τ = 500µs
(di/dt)c
Time
I
T
I
τ
RGT III
V = 200V
D
f = 3Hz
2
2
III Quadrant
101
7
102
7
I
FGT I
Minimum
Characteristics
Value
5
4
3
5
4
3
2
2
I Quadrant
3 4 5 7 101
100
101
100
2
3 4 5 7 101
2
3 4 5 7 102
100
2
2
3 4 5 7 102
Rate of Decay of On-State
Commutating Current (A/ms)
Gate Current Pulse Width (µs)
Rev.1.00, Aug.20.2004, page 5 of 7
BCR8KM-16LA
Gate Trigger Characteristics Test Circuits
6Ω 6Ω
A
A
6V
6V
330Ω
330Ω
V
V
Test Procedure I
Test Procedure II
6Ω
A
6V
330Ω
V
Test Procedure III
Rev.1.00, Aug.20.2004, page 6 of 7
BCR8KM-16LA
Package Dimensions
TO-220FN
EIAJ Package Code
Mass (g) (reference value)
2.0
Lead Material
Cu alloy
JEDEC Code
2.8 0.2
10 0.3
φ 3.2 0.2
1.1 0.2
1.1 0.2
0.75 0.15
2.54 0.25
0.75 0.15
2.54 0.25
Dimension in Millimeters
Min Typ Max
Symbol
A
A
A
b
1
2
D
E
e
x
Note 1) The dimensional figures indicate representative values unless
otherwise the tolerance is specified.
y
y1
ZD
ZE
Order Code
Standard order
code example
Lead form
Standard packing
Quantity
Standard order code
Straight type
Lead form
Plastic Magazine (Tube)
Plastic Magazine (Tube)
50 Type name
50 Type name – Lead forming code
BCR8KM-16LA
BCR8KM-16LA-A8
Note : Please confirm the specification about the shipping in detail.
Rev.1.00, Aug.20.2004, page 7 of 7
Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
Keep safety first in your circuit designs!
1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble
may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage.
Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary
circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap.
Notes regarding these materials
1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's
application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party.
2. Renesas Technology Corp. assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data,
diagrams, charts, programs, algorithms, or circuit application examples contained in these materials.
3. All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of
publication of these materials, and are subject to change by Renesas Technology Corp. without notice due to product improvements or other reasons. It is
therefore recommended that customers contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor for the latest product
information before purchasing a product listed herein.
The information described here may contain technical inaccuracies or typographical errors.
Renesas Technology Corp. assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors.
Please also pay attention to information published by Renesas Technology Corp. by various means, including the Renesas Technology Corp. Semiconductor
home page (http://www.renesas.com).
4. When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to
evaluate all information as a total system before making a final decision on the applicability of the information and products. Renesas Technology Corp. assumes
no responsibility for any damage, liability or other loss resulting from the information contained herein.
5. Renesas Technology Corp. semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life
is potentially at stake. Please contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor when considering the use of a
product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater
use.
6. The prior written approval of Renesas Technology Corp. is necessary to reprint or reproduce in whole or in part these materials.
7. If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and
cannot be imported into a country other than the approved destination.
Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited.
8. Please contact Renesas Technology Corp. for further details on these materials or the products contained therein.
RENESAS SALES OFFICES
http://www.renesas.com
Renesas Technology America, Inc.
450 Holger Way, San Jose, CA 95134-1368, U.S.A
Tel: <1> (408) 382-7500 Fax: <1> (408) 382-7501
Renesas Technology Europe Limited.
Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, United Kingdom
Tel: <44> (1628) 585 100, Fax: <44> (1628) 585 900
Renesas Technology Europe GmbH
Dornacher Str. 3, D-85622 Feldkirchen, Germany
Tel: <49> (89) 380 70 0, Fax: <49> (89) 929 30 11
Renesas Technology Hong Kong Ltd.
7/F., North Tower, World Finance Centre, Harbour City, Canton Road, Hong Kong
Tel: <852> 2265-6688, Fax: <852> 2375-6836
Renesas Technology Taiwan Co., Ltd.
FL 10, #99, Fu-Hsing N. Rd., Taipei, Taiwan
Tel: <886> (2) 2715-2888, Fax: <886> (2) 2713-2999
Renesas Technology (Shanghai) Co., Ltd.
26/F., Ruijin Building, No.205 Maoming Road (S), Shanghai 200020, China
Tel: <86> (21) 6472-1001, Fax: <86> (21) 6415-2952
Renesas Technology Singapore Pte. Ltd.
1, Harbour Front Avenue, #06-10, Keppel Bay Tower, Singapore 098632
Tel: <65> 6213-0200, Fax: <65> 6278-8001
© 2004. Renesas Technology Corp., All rights reserved. Printed in Japan.
Colophon .1.0
相关型号:
©2020 ICPDF网 联系我们和版权申明