BCR08DS-14AT13B12 [RENESAS]

700V-0.8A-Triac Low Power Use; 700V - 0.8A可控硅低功耗应用


型号：	BCR08DS-14AT13B12
厂家：	RENESAS TECHNOLOGY CORP
描述：	700V-0.8A-Triac Low Power Use 700V - 0.8A可控硅低功耗应用可控硅
文件：	总7页 (文件大小：105K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

Preliminary Datasheet

BCR08DS-14A

R07DS0258EJ0200

Rev.2.00

700V-0.8A-Triac

Low Power Use

Aug 07, 2013

Features

•

I_{T (RMS)}: 0.8 A

_DRM:700 V

_FGTI, I_RGTI, I_RGTIII: 5 mA or 10mA

IVmode trigger is available (#B12)

•

Planar Passivation Type

Surface Mounted Type

Completed Pb Free

Outline

RENESAS Package code: PRSP0004ZA-A

(Package name: SOT-223)

2, 4

1. T₁Terminal

2. T₂Terminal

3. Gate Terminal

4. T₂Terminal

Applications

Washing machine, electric fan, air cleaner, other general purpose control applications

Maximum Ratings

Voltage class

Parameter

Symbol

Unit

Repetitive peak off-state voltage^Note1

Non- repetitive peak off-state voltage^Note1

Notes: 1. Gate open.

V_DRM

V_DSM

700

840

Parameter

Symbol

Ratings

Unit

Conditions

RMS on-state current

I_{T (RMS)}

I_TSM

I²t

0.8

Commercial frequency, sine full wave

360° conduction, Tc= 96°C^Note3

Surge on-state current

I²t for fusing

60Hz sinewave 1 full cycle, peak value,

non-repetitive

0.26

A²s

Value corresponding to 1 cycle of half

wave 60Hz, surge on-state current

Peak gate power dissipation

Average gate power dissipation

Peak gate voltage

P_GM

P_{G (AV)}

V_GM

I_GM

0.1

Peak gate current

0.5

Junction temperature

Storage temperature

Mass

– 40 to +125

0.12

°C

Tstg

—

Typical value

R07DS0258EJ0200 Rev.2.00

Aug 07, 2013

Page 1 of 6

BCR08DS-14A

Preliminary

Electrical Characteristics

Parameter

Symbol

BCR08DS-14A#B10

BCR08DS-14A#B12

Unit

Test conditions

Min.

Typ.

Max.

Min.

Typ.

Max.

Tj = 125°C

V_DRMapplied

Repetitive peak off-state

current

I_DRM

—

1.0

—

1.0

Tc = 25°C, I_TM=1.2 A

instantaneous

On-state voltage

V_TM

—

2.0

—

2.0

measurement

Tj = 25°C, V_D= 6 V

R_L= 6 Ω, R_G= 330 Ω

Gate trigger

voltage^Note2

V_FGT

—

2.0

—

2.0

ΙΙ

V_RGT

ΙΙΙ

V_RGT

ΙΙΙ

V_FGT

ΙΙΙ

Tj = 25°C, V_D= 6 V

R_L= 6 Ω, R_G= 330 Ω

Gate trigger

current^Note2

I_FGT

I_RGT

ΙΙ

ΙΙΙ

I_RGT

ΙΙΙ

I_FGT

—

Tj = 125°C

Gate non-trigger voltage

V_GD

0.2

—

0.2

—

V_D= 1/2 V_DRM

Junction to case^Note3

Thermal resistance

R_{th (j-c)}

—

°C/W

V/μs

Tj = 125°C

Critical-rate of rise of off-

state commutating

voltage ^Note4

(dv/dt)c

0.5

Tj = 125°C

Critical-rate of rise of off-

state voltage ^Note5

dv/dt

200

—

200

—

V/μs

Notes: 2. Measurement using the gate trigger characteristics measurement circuit.

3. Case temperature is measured on the T₂tab.

4. Test conditions of the critical-rate of rise of off-state commutating voltage are shown in the table below.

Commutating voltage and current waveforms (inductive

Test conditions

load)

1. Junction temperature

Time

(di/dt)c

Time

Supply Voltage

Tj = 125°C

2. Rate of decay of on-state commutating current

(di/dt)c = – 0.4 A/ms

Main Current

Main Voltage

Time

3. Peak off-state voltage

V_D= 400 V

(dv/dt)c

5. Test conditions of the critical-rate of rise of off-state voltage are shown in the table below.

Test conditions Off-state voltage waveforms

1. Junction temperature

Tj = 125°C

2. Off-state voltage waveform

Linear waveform

3. Peak off-state voltage

V_D= 200 V

dv/dt=0.8VD/(t2 - t1)

4. Gate open

R07DS0258EJ0200 Rev.2.00

Aug 07, 2013

Page 2 of6

BCR08DS-14A

Preliminary

Performance Curves

Maximum On-State Characteristics

Rated Surge On-State Current

10¹

Tj = 25°C

10⁰

10⁻¹

1.0

1.5

2.0

2.5

3.0

3.5

4.0

10⁰

10¹

10²

On-State Voltage (V)

Conduction Time (Cycles at 60Hz)

Gate Trigger Current vs.

Junction Temperature

Gate Characteristics

V_GM= 6V

10³

10²

10¹

Typical Example

10¹

P_GM= 1W

PG(AV) =

GT = 2V

0.1W

I_GM=

0.5A

IFGT I ,IRGT I,IRGTIII

10⁰

I_{FGT I},

I_{RGT I}, I_{RGT III}

10⁻¹

V_GD= 0.2V

IFGT III

VD=6V

RL=6Ω

10¹

10²

10³

–40

120

160

Junction Temperature (°C)

Gate Current (mA)

Gate Trigger Voltage vs.

Junction Temperature

Maximum Transient Thermal Impedance

Characteristics (Junction to case)

10²

10³

10⁴

10³

10²

10¹

Typical Example

10⁻¹

10⁰

10¹

10²

–40

120

160

Junction Temperature (°C)

Conduction Time (Cycles at 60Hz)

R07DS0258EJ0200 Rev.2.00

Aug 07, 2013

Page 3 of6

BCR08DS-14A

Preliminary

Allowable Case Temperature vs.

RMS On-State Current

Maximum On-State Power Dissipation

2.0

160

140

120

100

Curves apply regardless of

conduction angle

1.6

1.2

0.8

0.4

360°

Conduction

Resistive,

inductive loads

Conduction

Resistive,

inductive loads

0.2

0.4

0.6

0.8

1.0

0.2 0.4 0.6 0.8 1.0 1.2 1.4

RMS On-State Current (A)

Repetitive Peak Off-State Current vs.

Junction Temperature

Holding Current vs.

Junction Temperature

10⁵

10⁴

10³

10²

10³

10²

10¹

Typical Example

–40

120

160

–40

120

160

Junction Temperature (°C)

Latching Current vs.

Junction Temperature

Breakover Voltage vs.

Junction Temperature

10²

160

140

120

100

Typical Example

–

, G

Typical Example

Distribution

10¹

10⁰

–

, G

Typical Example

40 80

Junction Temperature (°C)

–

10⁻¹

–40

120

160

120

160

Junction Temperature (°C)

R07DS0258EJ0200 Rev.2.00

Aug 07, 2013

Page 4 of6

BCR08DS-14A

Preliminary

Breakover Voltage vs.

Rate of Rise of Off-State Voltage

Commutation Characteristics (Tj=125°C)

10¹

160

140

120

100

Conditions

= 200V

Typical Example

Tj = 125°C

Typical Example

= 1A

= 500μs

Tj = 125°C

III Quadrant

10⁰

I Quadrant

III Quadrant

Minimum

Characteristics

Value

10⁻¹

10⁰

10¹

10⁰

10¹

10²

10³

Rate of Rise of Off-State Voltage (V/μs)

Rate of Decay of On-State

Commutating Current (A/ms)

Gate Trigger Current vs.

Gate Current Pulse Width

Gate Trigger Characteristics Test Circuits

6Ω 6Ω

10³

Typical Example

RGT III

RGT I

330Ω

10²

Test Procedure I

Test Procedure II

FGT I

6Ω

FGT III

10¹

10⁰

330Ω

10¹

Gate Current Pulse Width (μs)

10²

Test Procedure III

Test Procedure IV

R07DS0258EJ0200 Rev.2.00

Aug 07, 2013

Page 5 of6

BCR08DS-14A

Preliminary

Package Dimensions

Package Name

SOT-223

JEITA Package Code

RENESAS Code

PRSP0004ZA-A

Previous Code

MASS[Typ.]

0.12g

Unit: mm

6.6 ± 0.1

3.0 ± 0.1

1.8 max.

0.33 ± 0.1

0.05 ± 0.05

0.74 ± 0.1

0.1

0.33 ± 0.1

2.3

0.1

Ordering Information

Orderable Part Number

BCR08DS-14AT13#B10

BCR08DS-14AT13#B12

Packing

Quantity

Remark

Embossed Tape

3000 pcs. Taping direction “T1”

Note : Please confirm the specification about the shipping in detail.

R07DS0258EJ0200 Rev.2.00

Aug 07, 2013

Page 6 of6

Notice

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Colophon 2.2

BCR08DS-14AT13B12 [RENESAS]

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