BCR08ES-14A [RENESAS]
700V - 0.8A - Triac Low Power Use; 700V - 0.8A - 三端双向可控硅低功耗应用型号: | BCR08ES-14A |
厂家: | RENESAS TECHNOLOGY CORP |
描述: | 700V - 0.8A - Triac Low Power Use |
文件: | 总4页 (文件大小:102K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
Preliminary Datasheet
BCR08ES-14A
R07DS0971EJ0001
Rev.0.01
700V - 0.8A - Triac
Low Power Use
Nov 28, 2012
Features
IT (RMS) : 0.8 A
DRM : 700 V
Non-Insulated Type
V
Planar Passivation Type
Surface Mounted Type
Completed Pb Free
I
FGTI, IRGTI, IRGTIII : 5 mA or 10mA
mode trigger is available (#B11, #B12)
Outline
RENESAS Package code: PLZZ0004CA-A)
Package name: UPAK)
(
3
2, 4
2
1
1. Gate Terminal
2. T2 Terminal
3. T1 Terminal
4. T2 Terminal
4
1
3
Applications
Hybrid IC, solid state relay, electric fan, washing machine, and other general purpose control applications
Maximum Ratings
Voltage class
Parameter
Symbol
Unit
14
Repetitive peak off-state voltageNote1
Non- repetitive peak off-state voltageNote1
VDRM
VDSM
700
840
V
V
Parameter
Symbol
Ratings
Unit
Conditions
RMS on-state current
IT (RMS)
ITSM
I2t
0.8
A
Commercial frequency, sine full wave
360° conduction, Ta= 40°CNote3
Surge on-state current
I2t for fusing
8
A
60 Hz sinewave 1 full cycle, peak value,
non-repetitive
0.26
A2s
Value corresponding to 1 cycle of half
wave 60 Hz, surge on-state current
Peak gate power dissipation
Average gate power dissipation
Peak gate voltage
PGM
PG (AV)
VGM
IGM
1
W
W
V
0.1
6
0.5
Peak gate current
A
Junction temperature
Storage temperature
Mass
Tj
– 40 to +125
– 40 to +125
50
°C
°C
mg
Tstg
—
Typical value
R07DS0971EJ0001 Rev.0.01
Nov 28, 2012
Page 1 of 3
BCR08ES-14A
Preliminary
Electrical Characteristics
Parameter
Symbol BCR08ES-14A#B10 BCR08ES-14A#B11 BCR08ES-14A#B12 Unit
Test conditions
Min.
Max.
Min.
Max.
Min.
Max.
Repetitive peak
off-state current
IDRM
VTM
—
1.0
—
1.0
—
1.0
mA Tj = 125C
VDRM applied
On-state voltage
—
2.0
—
2.0
—
2.0
V
Tc = 25C, ITM =1.2 A
instantaneous
measurement
Gate trigger
voltageNote2
VFGT
—
—
—
—
—
—
—
—
2.0
2.0
2.0
―
5
—
—
—
—
—
—
—
—
2.0
2.0
2.0
2.0
5
—
—
—
—
—
—
—
—
2.0
2.0
2.0
2.0
10
V
V
V
V
Tj = 25C, VD = 6 V
RL = 6 , RG = 330
VRGT
VRGT
VFGT
Gate trigger
currentNote2
IFGT
mA Tj = 25C, VD = 6 V
RL = 6 , RG = 330
IRGT
5
5
10
mA
mA
mA
IRGT
5
5
10
IFGT
7
10
―
Gate non-trigger
voltage
VGD
0.2
—
0.2
—
0.2
—
V
Tj = 125C
VD = 1/2 VDRM
Thermal resistance
Rth (j-a)
—
65
—
—
65
—
—
65
—
C/W Junction to ambientNote3
Critical-rate of rise of
off-state commutating
voltage Note4
(dv/dt)c
0.5
0.5
0.5
V/s Tj = 125C
Notes: 1. Gate open.
2. Measurement using the gate trigger characteristics measurement circuit.
3. Soldering with ceramic plate (25 mm 25 mm t0.7 mm)
4. Test conditions of the critical-rate of rise of off-state commutating voltage are shown in the table below.
Commutating voltage and current waveforms
Test conditions
(inductive load)
1. Junction temperature
Time
Supply Voltage
Tj = 125°C
(di/dt)c
2. Rate of decay of on-state commutating current
(di/dt)c = – 0.4 A/ms
Time
Time
Main Current
Main Voltage
3. Peak off-state voltage
VD = 400 V
(dv/dt)c
V
D
R07DS0971EJ0001 Rev.0.01
Nov 28, 2012
Page 2 of 3
BCR08ES-14A
Preliminary
Package Dimensions
Package Name
UPAK
JEITA Package Code
SC-62
RENESAS Code
PLZZ0004CA-A
Previous Code
UPAK / UPAKV
MASS[Typ.]
0.050g
Unit: mm
4.5 0.1
1.8 Max
1.5 0.1
(1.5)
0.44 Max
φ
1
0.53 Max
0.48 Max
0.44 Max
1.5
1.5
3.0
Ordering Information
Orderable Part Number
BCR08ES-14AT14#B10
BCR08ES-14AT14#B11
BCR08ES-14AT14#B12
Packing
Quantity
Remark
Embossed Tape
Embossed Tape
Embossed Tape
4000 pcs. Taping direction “T1”
4000 pcs. Taping direction “T1”
4000 pcs. Taping direction “T1”
R07DS0971EJ0001 Rev.0.01
Nov 28, 2012
Page 3 of 3
SALES OFFICES
http://www.renesas.com
Refer to "http://www.renesas.com/" for the latest and detailed information.
Renesas Electronics America Inc.
2880 Scott Boulevard Santa Clara, CA 95050-2554, U.S.A.
Tel: +1-408-588-6000, Fax: +1-408-588-6130
Renesas Electronics Canada Limited
1101 Nicholson Road, Newmarket, Ontario L3Y 9C3, Canada
Tel: +1-905-898-5441, Fax: +1-905-898-3220
Renesas Electronics Europe Limited
Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K
Tel: +44-1628-651-700, Fax: +44-1628-651-804
Renesas Electronics Europe GmbH
Arcadiastrasse 10, 40472 Düsseldorf, Germany
Tel: +49-211-65030, Fax: +49-211-6503-1327
Renesas Electronics (China) Co., Ltd.
7th Floor, Quantum Plaza, No.27 ZhiChunLu Haidian District, Beijing 100083, P.R.China
Tel: +86-10-8235-1155, Fax: +86-10-8235-7679
Renesas Electronics (Shanghai) Co., Ltd.
Unit 204, 205, AZIA Center, No.1233 Lujiazui Ring Rd., Pudong District, Shanghai 200120, China
Tel: +86-21-5877-1818, Fax: +86-21-6887-7858 / -7898
Renesas Electronics Hong Kong Limited
Unit 1601-1613, 16/F., Tower 2, Grand Century Place, 193 Prince Edward Road West, Mongkok, Kowloon, Hong Kong
Tel: +852-2886-9318, Fax: +852 2886-9022/9044
Renesas Electronics Taiwan Co., Ltd.
13F, No. 363, Fu Shing North Road, Taipei, Taiwan
Tel: +886-2-8175-9600, Fax: +886 2-8175-9670
Renesas Electronics Singapore Pte. Ltd.
80 Bendemeer Road, Unit #06-02 Hyflux Innovation Centre Singapore 339949
Tel: +65-6213-0200, Fax: +65-6213-0300
Renesas Electronics Malaysia Sdn.Bhd.
Unit 906, Block B, Menara Amcorp, Amcorp Trade Centre, No. 18, Jln Persiaran Barat, 46050 Petaling Jaya, Selangor Darul Ehsan, Malaysia
Tel: +60-3-7955-9390, Fax: +60-3-7955-9510
Renesas Electronics Korea Co., Ltd.
11F., Samik Lavied' or Bldg., 720-2 Yeoksam-Dong, Kangnam-Ku, Seoul 135-080, Korea
Tel: +82-2-558-3737, Fax: +82-2-558-5141
© 2012 Renesas Electronics Corporation. All rights reserved.
Colophon 2.2
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