BCR08ES-14AT14B12 [RENESAS]

700V - 0.8A - Triac Low Power Use; 700V - 0.8A - 三端双向可控硅低功耗应用


型号：	BCR08ES-14AT14B12
厂家：	RENESAS TECHNOLOGY CORP
描述：	700V - 0.8A - Triac Low Power Use 700V - 0.8A - 三端双向可控硅低功耗应用可控硅
文件：	总4页 (文件大小：102K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

Preliminary Datasheet

BCR08ES-14A

R07DS0971EJ0001

Rev.0.01

700V - 0.8A - Triac

Low Power Use

Nov 28, 2012

Features



I_{T (RMS)}: 0.8 A

_DRM: 700 V



Non-Insulated Type

Planar Passivation Type

Surface Mounted Type

Completed Pb Free

_FGTI, I_RGTI, I_RGTIII: 5 mA or 10mA

mode trigger is available (#B11, #B12)

Outline

RENESAS Package code: PLZZ0004CA-A)

Package name: UPAK)

(

2, 4

1. Gate Terminal

2. T₂Terminal

3. T₁Terminal

4. T₂Terminal

Applications

Hybrid IC, solid state relay, electric fan, washing machine, and other general purpose control applications

Maximum Ratings

Voltage class

Parameter

Symbol

Unit

Repetitive peak off-state voltage^Note1

Non- repetitive peak off-state voltage^Note1

V_DRM

V_DSM

700

840

Parameter

Symbol

Ratings

Unit

Conditions

RMS on-state current

I_{T (RMS)}

I_TSM

I²t

0.8

Commercial frequency, sine full wave

360° conduction, Ta= 40°C^Note3

Surge on-state current

I²t for fusing

60 Hz sinewave 1 full cycle, peak value,

non-repetitive

0.26

A²s

Value corresponding to 1 cycle of half

wave 60 Hz, surge on-state current

Peak gate power dissipation

Average gate power dissipation

Peak gate voltage

P_GM

P_{G (AV)}

V_GM

I_GM

0.1

0.5

Peak gate current

Junction temperature

Storage temperature

Mass

– 40 to +125

°C

Tstg

—

Typical value

R07DS0971EJ0001 Rev.0.01

Nov 28, 2012

Page 1 of 3

BCR08ES-14A

Preliminary

Electrical Characteristics

Parameter

Symbol BCR08ES-14A#B10 BCR08ES-14A#B11 BCR08ES-14A#B12 Unit

Test conditions

Min.

Max.

Min.

Max.

Min.

Max.

Repetitive peak

off-state current

I_DRM

V_TM

—

1.0

—

1.0

—

1.0

mA Tj = 125C

V_DRMapplied

On-state voltage

—

2.0

—

2.0

—

2.0

Tc = 25C, I_TM=1.2 A

instantaneous

measurement

Gate trigger

voltage^Note2



V_FGT

—

2.0

―

—

2.0

—

2.0

Tj = 25C, V_D= 6 V

R_L= 6 , R_G= 330 





V_RGT



 V_RGT



V_FGT



Gate trigger

current^Note2



I_FGT

mA Tj = 25C, V_D= 6 V



R_L= 6 , R_G= 330 



I_RGT





I_RGT



I_FGT



―

Gate non-trigger

voltage

V_GD

0.2

—

0.2

—

0.2

—

Tj = 125C

V_D= 1/2 V_DRM

Thermal resistance

R_{th (j-a)}

—

C/W Junction to ambient^Note3

Critical-rate of rise of

off-state commutating

voltage ^Note4

(dv/dt)c

0.5

V/s Tj = 125C

Notes: 1. Gate open.

2. Measurement using the gate trigger characteristics measurement circuit.

3. Soldering with ceramic plate (25 mm  25 mm  t0.7 mm)

4. Test conditions of the critical-rate of rise of off-state commutating voltage are shown in the table below.

Commutating voltage and current waveforms

Test conditions

(inductive load)

1. Junction temperature

Time

Supply Voltage

Tj = 125°C

(di/dt)c

2. Rate of decay of on-state commutating current

(di/dt)c = – 0.4 A/ms

Time

Main Current

Main Voltage

3. Peak off-state voltage

V_D= 400 V

(dv/dt)c

R07DS0971EJ0001 Rev.0.01

Nov 28, 2012

Page 2 of 3

BCR08ES-14A

Preliminary

Package Dimensions

Package Name

UPAK

JEITA Package Code

SC-62

RENESAS Code

PLZZ0004CA-A

Previous Code

UPAK / UPAKV

MASS[Typ.]

0.050g

Unit: mm

4.5 0.1

1.8 Max

1.5 0.1

(1.5)

0.44 Max

0.53 Max

0.48 Max

0.44 Max

1.5

3.0

Ordering Information

Orderable Part Number

BCR08ES-14AT14#B10

BCR08ES-14AT14#B11

BCR08ES-14AT14#B12

Packing

Quantity

Remark

Embossed Tape

4000 pcs. Taping direction “T1”

R07DS0971EJ0001 Rev.0.01

Nov 28, 2012

Page 3 of 3

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Colophon 2.2

BCR08ES-14AT14B12 [RENESAS]

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