BCR10 [INFINEON]
NPN/PNP Silicon Digital Tansistor Array (Switching circuit, inverter, interface circuit, drive circuit); NPN / PNP硅数字Tansistor阵列（开关电路，逆变器，接口电路，驱动电路）
| 型号： | BCR10 |
| 厂家： | 
Infineon |
| 描述： | NPN/PNP Silicon Digital Tansistor Array (Switching circuit, inverter, interface circuit, drive circuit) |
| 文件： | 总5页 (文件大小：67K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BCR 10PN
NPN/PNP Silicon Digital Tansistor Array
• Switching circuit, inverter, interface circuit,
drive circuit
• Two (galvanic) internal isolated NPN/PNP
Transistor in one package
Ω
Ω
• Built in bias resistor (R =10k , R =10k )
1
2
Tape loading orientation
Type
Marking Ordering Code Pin Configuration
Package
BCR 10PN W1s
Q62702-C2411 1=E1 2= B1 3=C2 4=E2 5=B2 6=C1 SOT-363
Maximum Ratings
Parameter
Symbol
Values
Unit
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Input on Voltage
V
CEO
V
CBO
V
EBO
V
i(on)
50
V
50
10
20
DC collector current
I
100
mA
mW
°C
C
Total power dissipation, T = 115°C
P
250
S
tot
j
Junction temperature
Storage temperature
T
T
150
- 65 ... + 150
stg
Thermal Resistance
1)
≤
Junction ambient
R
R
275
K/W
thJA
Junction - soldering point
≤ 140
thJS
1) Package mounted on pcb 40mm x 40mm x 1.5mm / 0.5cm2 Cu
Semiconductor Group
1
Nov-26-1996
BCR 10PN
Electrical Characteristics at T =25°C, unless otherwise specified
A
Parameter
Symbol
Values
typ.
Unit
min.
max.
DC Characteristics
Collector-emitter breakdown voltage
V
V
V
(BR)CEO
(BR)CBO
CBO
I = 100 µA, I = 0
50
50
-
-
-
-
-
-
-
-
-
C
B
Collector-base breakdown voltage
I = 10 µA, I = 0
-
C
B
Collector cutoff current
= 40 V, I = 0
I
I
nA
mA
-
V
CB
100
0.75
-
E
Emitter cutoff current
= 10 V, I = 0
EBO
V
EB
-
C
DC current gain
I = 5 mA, V = 5 V
h
FE
30
-
C
CE
Collector-emitter saturation voltage 1)
I = 10 mA, I = 0.5 mA
V
V
V
V
CEsat
i(off)
0.3
1.5
C
B
Input off voltage
I = 100 µA, V = 5 V
0.8
C
CE
Input on Voltage
I = 2 mA, V = 0.3 V
i(on)
1
-
2.5
13
C
CE
Ω
Input resistor
Resistor ratio
R
7
10
1
k
-
1
R /R
0.9
1.1
1
2
AC Characteristics for NPN Type
Transition frequency
f
MHz
pF
T
I = 10 mA, V = 5 V, f = 100 MHz
-
-
130
3
-
-
C
CE
Collector-base capacitance
= 10 V, f = 1 MHz
C
cb
V
CB
1) Pulse test: t < 300µs; D < 2%
Semiconductor Group
2
Nov-26-1996
BCR 10PN
NPN TYPE
DC Current Gain h = f (I )
Collector-Emitter Saturation Voltage
V = f(I ), h = 20
CEsat
FE
C
V
CE
= 5V (common emitter configuration)
C
FE
10 2
10 3
-
hFE
IC
V
10 2
10 1
10 0
10 1
10 0
10 -1
10 0
10 1
mA
IC
0.0
0.2
0.4
0.6
V
1.0
VCEsat
Input on Voltage V
= f(I )
Input off voltage V = f(I )
i(off) C
i(on)
C
V
CE
= 0.3V (common emitter configuration)
V
CE
= 5V (common emitter configuration)
10 2
mA
10 1
mA
IC
IC
10 1
10 0
10 -1
10 0
10 -1
10 -2
10 -1
10 0
10 1
V
0.0
0.5
1.0
1.5
2.0
V
3.0
Vi(on)
Vi(off)
Semiconductor Group
3
Nov-26-1996
BCR 10PN
PNP TYPE
DC Current Gain h = f (I )
Collector-Emitter Saturation Voltage
V = f(I ), h = 20
CEsat
FE
C
V
CE
= 5V (common emitter configuration)
C
FE
10 2
10 3
-
hFE
IC
mA
10 2
10 1
10 0
10 1
10 0
10 -1
10 0
10 1
mA
IC
0.0
0.2
0.4
0.6
V
1.0
VCEsat
Input on Voltage V
= f(I )
Input off voltage V = f(I )
i(off) C
i(on)
C
V
CE
= 0.3V (common emitter configuration)
V
CE
= 5V (common emitter configuration)
10 2
mA
10 1
mA
IC
IC
10 1
10 0
10 -1
10 0
10 -1
10 -2
10 -1
10 0
10 1
V
0.0
0.5
1.0
1.5
V
2.5
Vi(on)
Vi(off)
Semiconductor Group
4
Nov-26-1996
BCR 10PN
Total power dissipation P = f (T *;T )
tot
A
S
* Package mounted on epoxy
300
mW
Ptot
TS
TA
200
150
100
50
0
0
20
40
60
80
100 120 °C 150
TA,TS
Permissible Pulse Load R
= f(t )
Permissible Pulse Load P
/ P = f(t )
totDC p
thJS
p
totmax
10 3
K/W
10 3
-
RthJS
10 2
Ptotmax/PtotDC
D = 0
0.005
0.01
0.02
0.05
0.1
10 2
10 1
10 0
10 1
0.2
0.5
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D = 0
10 0
10 -1
10 -6
10 -5
10 -4
10 -3
10 -2
10 -1 s 10 0
tp
10 -6
10 -5
10 -4
10 -3
10 -2
10 -1 s 10 0
tp
Semiconductor Group
5
Nov-26-1996
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