2SK3211STL-E [RENESAS]
Silicon N Channel MOS FET High Speed Power Switching; 硅N沟道MOS FET高速电源开关
| 型号： | 2SK3211STL-E |
| 厂家： | 
RENESAS TECHNOLOGY CORP |
| 描述： | Silicon N Channel MOS FET High Speed Power Switching |
| 文件： | 总9页 (文件大小：94K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2SK3211(L), 2SK3211(S)
Silicon N Channel MOS FET
High Speed Power Switching
REJ03G1091-0400
Rev.4.00
May 15, 2006
Features
•
Low on-resistance
RDS = 60 mΩ typ.
•
•
High speed switching
4 V gate drive device can be driven from 5 V source
Outline
RENESAS Package code: PRSS0004AE-A RENESAS Package code: PRSS0004AE-B
(Package name: LDPAK(S)-(1))
(Package name: LDPAK(L))
4
D
4
1. Gate
G
2. Drain
3. Source
4. Drain
1
2
3
1
S
2
3
Rev.4.00 May 15, 2006 page 1 of 8
2SK3211(L), 2SK3211(S)
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Symbol
VDSS
VGSS
ID
Ratings
Unit
200
V
V
±20
25
A
Note1
Drain peak current
ID(pulse)
100
A
Body-drain diode reverse drain current
Avalanche current
IDR
25
25
A
Note3
IAP
A
Note3
Avalanche energy
EAR
Pch Note2
41
mJ
W
°C
°C
Channel dissipation
100
Channel temperature
Tch
150
Storage temperature
Tstg
–55 to +150
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value at Tc = 25°C
3. Value at Tch = 25°C, Rg ≥ 50 Ω
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
Typ
—
Max
—
Unit
Test Conditions
Drain to source breakdown voltage
Gate to source breakdown voltage
Gate to source leak current
Zero gate voltage drain current
Gate to source cutoff voltage
V(BR)DSS
V(BR)GSS
IGSS
200
±20
—
V
V
ID = 10 mA, VGS = 0
—
—
IG = ±100 µA, VDS = 0
VGS = ±16 V, VDS = 0
VDS = 200 V, VGS = 0
ID = 1 mA, VDS = 10 V
ID = 15 A, VGS = 10 VNote4
ID = 15 A, VGS = 4 V Note4
ID = 15 A, VDS = 10 V Note4
—
±10
10
2.5
75
85
—
µA
µA
V
IDSS
—
—
VGS(off)
RDS(on)
RDS(on)
|yfs|
1.0
—
—
Static drain to source on state
resistance
60
mΩ
mΩ
S
—
65
Forward transfer admittance
Input capacitance
18
—
30
Ciss
Coss
Crss
td(on)
tr
2420
790
340
20
—
pF
pF
pF
ns
ns
ns
ns
V
VDS = 10 V, VGS = 0,
f = 1 MHz
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
—
—
—
—
—
—
ID = 15 A, VGS = 10 V,
RL = 2 Ω
—
230
590
330
0.95
230
—
Turn-off delay time
Fall time
td(off)
tf
—
—
—
—
Body–drain diode forward voltage
VDF
—
—
IF = 25 A, VGS = 0
Body–drain diode reverse recovery
time
trr
—
—
ns
IF = 25 A, VGS = 0
diF/ dt = 50 A/ µs
Note: 4. Pulse test
Rev.4.00 May 15, 2006 page 2 of 8
2SK3211(L), 2SK3211(S)
Main Characteristics
Power vs. Temperature Derating
Maximum Safe Operation Area
1000
100
10
160
120
80
40
0
DC Operation
(Tc = 2
5°C)
1
Operation in
this area is
limited by RDS (on)
0.1
0.01
Ta = 25°C
1
3
10
30
100 300 1000
0
50
100
150
200
Case Temperature Tc (°C)
Drain to Source Voltage VDS (V)
Typical Output Characteristics
Typical Transfer Characteristics
50
40
30
20
10
0
20
16
12
8
Pulse Test
3.5 V
10 V
6 V
VDS = 10 V
Pulse Test
4 V
3 V
Tc = 75°C
25°C
4
VGS = 2.5 V
–25°C
0
0
2
4
6
8
10
0
1
2
3
4
5
Drain to Source Voltage VDS (V)
Gate to Source Voltage VGS (V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
Static Drain to Source on State Resistance
vs. Drain Current
2.5
500
Pulse Test
Pulse Test
2.0
1.5
1.0
0.5
0
200
100
VGS = 4 V
50
ID = 15 A
10 A
10 V
20
10
5 A
1
2
5
10 20
50 100
0
4
8
12
16
20
Gate to Source Voltage VGS (V)
Drain Current ID (A)
Rev.4.00 May 15, 2006 page 3 of 8
2SK3211(L), 2SK3211(S)
Static Drain to Source on State
Resistance vs. Temperature
Forward Transfer Admittance
vs. Drain Current
50
250
200
150
100
50
Pulse Test
Tc = –25°C
25°C
20
10
5
75°C
5,10,15 A
VGS = 4 V
5,10,15 A
2
1
10 V
VDS = 10 V
Pulse Test
0
0.5
–40
0
40
80
120
160
0.1 0.3
1
3
10
30
100
Case Temperature TC (°C)
Drain Current ID (A)
Body to Drain Diode Reverse
Recovery Time
Typical Capacitance
vs. Drain to Source Voltage
1000
500
10000
5000
di / dt = 50 A / µs
VGS = 0, Ta = 25°C
Ciss
2000
1000
500
200
100
50
Coss
Crss
200
100
50
20
10
VGS = 0
20
10
f = 1 MHz
0.1 0.3
1
3
10
30
100
0
10
20
30
40
50
Reverse Drain Current IDR (A)
Drain to Source Voltage VDS (V)
Dynamic Input Characteristics
ID = 20 A
Switching Characteristics
1000
500
200
160
120
80
20
16
12
8
t
d(off)
VDD = 150 V
100 V
50 V
t
f
200
100
VGS
t
r
50
VGS = 10 V, VDD = 30 V
PW = 5 µs, duty < 1 %
t
d(on)
40
4
0
VDD = 150 V
100 V
50 V
20
10
VDS
0
20
2
0.1 0.2
1
10
40
80
120
160
200
0.5
5
Drain Current ID (A)
Gate Charge Qg (nc)
Rev.4.00 May 15, 2006 page 4 of 8
2SK3211(L), 2SK3211(S)
Reverse Drain Current vs.
Source to Drain Voltage
Maximum Avalanche Energy vs.
Channel Temperature Derating
20
16
12
8
50
40
30
20
Pulse Test
IAP = 25 A
VDD = 50 V
duty < 0.1 %
Rg > 50 Ω
10 V
5 V
4
10
0
VGS = 0, –5 V
0
0.2
0.4
0.6
0.8
1.0
25
50
75
100
125
150
Source to Drain Voltage VSD (V)
Channel Temperature Tch (°C)
Normalized Transient Thermal Impedance vs. Pulse Width
3
1
Tc = 25°C
D = 1
0.5
0.3
0.1
θ
θ
γ
θ
ch – c(t) = s (t) • ch – c
ch – c = 1.25°C/W, Tc = 25°C
PW
T
P
DM
D =
0.03
0.01
PW
T
10 µ
100 µ
1 m
10 m
100 m
1
10
Pulse Width PW (S)
Avalanche Test Circuit
Avalanche Waveform
VDSS
L
1
2
2
EAR
=
• L • IAP •
VDS
Monitor
VDSS – VDD
IAP
Monitor
VV(BR)DSS
IAP
Rg
VDS
VDD
D. U. T
ID
Vin
15 V
50 Ω
VDD
0
Rev.4.00 May 15, 2006 page 5 of 8
2SK3211(L), 2SK3211(S)
Switching Time Test Circuit
Switching Time Waveforms
90%
Vout
Monitor
Vin Monitor
D.U.T.
10%
10%
Vin
RL
Vout
10%
VDD
= 30 V
Vin
10 V
50 Ω
90%
90%
t
t
t
r
d(on)
t
f
d(off)
Rev.4.00 May 15, 2006 page 6 of 8
2SK3211(L), 2SK3211(S)
Package Dimensions
Package Name
LDPAK(L)
JEITA Package Code
RENESAS Code
PRSS0004AE-A
Previous Code
MASS[Typ.]
1.40g
Unit: mm
LDPAK(L) / LDPAK(L)V
4.44 0.2
1.3 0.15
10.2 0.3
1.3 0.2
1.37 0.2
2.49 0.2
+ 0.2
0.86
– 0.1
0.76 0.1
2.54 0.5
0.4 0.1
2.54 0.5
Package Name
LDPAK(S)-(1)
JEITA Package Code
SC-83
RENESAS Code
PRSS0004AE-B
Previous Code
MASS[Typ.]
1.30g
Unit: mm
LDPAK(S)-(1) / LDPAK(S)-(1)V
4.44 0.2
7.8
6.6
10.2 0.3
1.3 0.15
2.49 0.2
+ 0.2
0.1
– 0.1
2.2
1.37 0.2
0.4 0.1
+ 0.2
– 0.1
1.3 0.2
0.86
2.54 0.5
2.54 0.5
Rev.4.00 May 15, 2006 page 7 of 8
2SK3211(L), 2SK3211(S)
Ordering Information
Part Name
Quantity
Shipping Container
2SK3211L-E
500 pcs
1000pcs
Box (Sack)
Taping
2SK3211STL-E
Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of
production before ordering the product.
Rev.4.00 May 15, 2006 page 8 of 8
Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
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Colophon .6.0
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