2SK3217-01MR [FUJI]
Power Field-Effect Transistor, 50A I(D), 100V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220F, 3 PIN;
| 型号： | 2SK3217-01MR |
| 厂家： | 
FUJI ELECTRIC |
| 描述： | Power Field-Effect Transistor, 50A I(D), 100V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220F, 3 PIN 局域网 开关 脉冲 晶体管 |
| 文件： | 总4页 (文件大小：141K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
FUJI POWER MOS-FET
2SK3217-01MR
N-CHANNEL SILICON POWER MOS-FET
TO-220F15
Features
High speed switching
Low on-resistance
No secondary breadown
Low driving power
Avalanche-proof
Applications
2.54
Switching regulators
UPS (Uninterruptible Power Supply)
DC-DC converters
3. Source
Maximum ratings and characteristicAbsolute maximum ratings
(Tc=25°C unless otherwise specified)
Equivalent circuit schematic
Item
Drain-source voltage
Symbol
VDS
ID
Rating
100
Unit
V
Drain(D)
Continuous drain current
Pulsed drain current
±50
A
ID(puls]
VGS
EAV*1
PD
±200
±30
A
Gate-source voltage
V
Maximum Avalanche Energy
Max. power dissipation Ta=25
464
mJ
W
W
°C
°C
Gate(G)
°C
°C
2.0
Source(S)
Tc=25
PD
70
Operating and storage
temperature range
Tch
+150
-55 to +150
Tstg
*1 L=298µH, Vcc=24V
Electrical characteristics (Tc =25°C unless otherwise specified)
Min.
Typ.
Max. Units
Item
Test Conditions
Symbol
V(BR)DSS
VGS(th)
Drain-source breakdown voltaget
Gate threshold voltage
ID=1mA
ID=1mA
VGS=0V
V
100
VDS=VGS
V
2.5
3.0
3.5
100
0.5
100
Tch=25°C
µA
mA
nA
VDS=100V
VGS=0V
1
Zero gate voltage drain current
IDSS
Tch=125°C
0.1
VGS=±30V
Gate-source leakage current
Drain-source on-state resistance
Forward transcondutance
Input capacitance
VDS=0V
10
IGSS
RDS(on)
gfs
ID=25A VGS=10V
ID=25A VDS=25V
VDS=25V
20
25
mΩ
S
16.0
32.0
3200
4800
1140
345
35
Ciss
Coss
Crss
td(on)
tr
pF
ns
Output capacitance
VGS=0V
760
230
23
Reverse transfer capacitance
Turn-on time ton
f=1MHz
VCC=48V ID=50A
VGS=10V
130
110
65
195
165
100
Turn-off time toff
td(off)
tf
RGS=10 Ω
50
A
Avalanche capability
L=100µH Tch=25°C
IAV
0.97
150
0.80
1.46
V
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
IF=50A VGS=0V Tch=25°C
IF=50A VGS=0V
-di/dt=100A/µs
Tch=25°C
VSD
ns
µC
trr
Qrr
Thermalcharacteristics
Item
Min.
Typ.
Max. Units
Symbol
Test Conditions
Rth(ch-c)
channel to case
1.79
°C/W
Thermal resistance
Rth(ch-a)
channel to ambient
62.5
°C/W
1
2SK3217-01MR
FUJI POWER MOSFET
Characteristics
Safe operating area
Power Dissipation
ID=f(VDS):Single Pulse(D=0),Tc=25°C
PD=f(Tc)
103
102
101
100
10-1
80
70
60
50
40
30
20
10
0
t=
1µs
10µs
D.C.
100µs
1ms
10ms
t
100ms
t
D=
T
T
10-1
100
101
102
103
0
25
50
75
100
125
150
Tc [°C]
VDS [V]
Typical transfer characteristics
ID=f(VGS):80µs pulse test,VDS=25V,Tch=25°C
Typical output characteristics
ID=f(VDS):80µs pulse test,Tc=25°C
125
15V
VGS=20V
10V
7.0V
100
10
1
100
75
50
25
0
6.5V
6.0V
5.5V
5.0V
4.5V
0.1
0
1
2
3
4
5
0
2
4
6
8
10
VGS [V]
VDS [V]
Typical Drain-Source on-State Resistance
RDS(on)=f(ID):80µs pulse test,Tch=25°C
Typical forward transconductance
gfs=f(ID):80µs pulse test,VDS=25V,Tch=25°C
0.08
0.07
0.06
0.05
0.04
0.03
0.02
0.01
0.00
102
VGS=
6.0V
4.5V
5.0V
5.5V
101
100
10-1
6.5V
7.0V
10V
15V
20V
10-1
100
101
102
0
20
40
60
ID [A]
80
100
120
ID [A]
2
2SK3217-01MR
FUJI POWER MOSFET
Drain-source on-state resistance
Gate Threshold Voltage vs. Tch
VGS(th)=f(Tch):VDS=VGS,ID=1mA
RDS(on)=f(Tch):ID=25A,VGS=10V
80
70
60
50
40
30
20
10
0
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
max.
typ.
max.
min.
typ.
-50
-25
0
25
50
75
100
125
150
-50
-25
0
25
50
75
100
125
150
Tch [°C]
Tch [°C]
Typical capacitances
C=f(VDS):VGS=0V,f=1MHz
Typical Gate Charge Characteristics
VGS=f(Qg):ID=50A,Tch=25°C
100n
100
90
80
70
60
50
40
30
20
10
0
25
20
15
10
5
VDS
VGS
10n
Vcc=80V
50V
20V
Ciss
1n
Coss
Crss
0
100p
10-2
10-1
100
101
102
0
20
40
60
80
100
120
140
160
Qg [nC]
VDS [V]
Typical Forward Characteristics of Reverse Diode
-ID=f(VSD):80µs pulse test,Tch=25°C
Typical Switching Characteristics vs. ID
t=f(ID):Vcc=48V,VGS=10V,RG=10 Ω
100
90
80
70
60
50
40
30
20
10
0
104
103
102
101
td(off)
tf
tr
10V
0.2
5V
VGS=0V
1.0
td(on)
10-1
100
101
102
0.0
0.4
0.6
0.8
1.2
1.4
ID [A]
VSD [V]
3
2SK3217-01MR
FUJI POWER MOSFET
Maximum Avalanche Current vs. starting Tch
I(AV)=f(starting Tch),Non Repetitive
Transient Thermal Impedance
Zth(ch-c)=f(t):D=t/T
1
10
70
60
50
40
30
20
10
0
0
10
D=0.5
0.2
0.1
0.05
-1
10
0.02
0.01
t
-2
10
t
D=
0
T
T
-3
10
-6
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
10
t [sec]
0
25
50
75
100
125
150
Starting Tch [°C]
Maximum Avalanche energy vs. starting Tch
Eas=f(starting Tch):Vcc=24V,I <=50A,Non-Repetitive
AV
600
500
400
300
200
100
0
0
25
50
75
100
125
150
Starting Tch [°C]
4
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