2SK3212-E [RENESAS]
Silicon N Channel MOS FET High Speed Power Switching; 硅N沟道MOS FET高速电源开关
| 型号： | 2SK3212-E |
| 厂家： | 
RENESAS TECHNOLOGY CORP |
| 描述： | Silicon N Channel MOS FET High Speed Power Switching |
| 文件： | 总8页 (文件大小：94K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2SK3212
Silicon N Channel MOS FET
High Speed Power Switching
REJ03G1092-0300
(Previous: ADE-208-752A)
Rev.3.00
Sep 07, 2005
Features
•
Low on-resistance
RDS =0.1 Ω typ.
•
•
High speed switching
4 V gate drive device can be driven from 5 V source
Outline
RENESAS Package code: PRSS0003AD-A
(Package name: TO-220FM)
D
G
1. Gate
2. Drain
3. Source
1
2
3
S
Rev.3.00 Sep 07, 2005 page 1 of 7
2SK3212
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Symbol
VDSS
VGSS
ID
Ratings
Unit
V
100
±20
V
10
A
Note1
Drain peak current
ID(pulse)
40
A
Body-drain diode reverse drain current
Avalanche current
IDR
10
A
Note3
IAP
10
10
A
Note3
Avalanche energy
EAR
Pch Note2
mJ
W
°C
°C
Channel dissipation
20
Channel temperature
Tch
150
Storage temperature
Tstg
–55 to +150
Notes: 1. PW ≤ 10µs, duty cycle ≤ 1 %
2. Value at Tc = 25°C
3. Value at Tch = 25°C, Rg ≥ 50Ω
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
Typ
—
Max
—
Unit
Test Conditions
ID = 10 mA, VGS = 0
Drain to source breakdown voltage
Gate to source breakdown voltage
Gate to source leak current
Zero gate voltage drain current
Gate to source cutoff voltage
Static drain to source on state
resistance
V(BR)DSS
V(BR)GSS
IGSS
100
±20
—
V
V
—
—
IG = ±100 µA, VDS = 0
VGS = ±16 V, VDS = 0
VDS = 100 V, VGS = 0
ID = 1 mA, VDS = 10 V
ID = 5 A, VGS = 10 VNote4
ID = 5 A, VGS = 4 V Note4
ID = 5 A, VDS = 10 V Note4
—
±10
10
2.5
130
170
—
µA
µA
V
IDSS
—
—
VGS(off)
RDS(on)
RDS(on)
|yfs|
1.0
—
—
100
130
7.5
420
185
100
12
mΩ
mΩ
S
—
Forward transfer admittance
Input capacitance
4.5
—
Ciss
Coss
Crss
td(on)
tr
—
pF
pF
pF
ns
ns
ns
ns
V
VDS = 10 V, VGS = 0,
f = 1 MHz
Output capacitance
—
—
Reverse transfer capacitance
Turn-on delay time
—
—
—
—
ID = 5 A, VGS = 10 V,
RL = 6 Ω
Rise time
—
60
—
Turn-off delay time
td(off)
tf
—
105
70
—
Fall time
—
—
Body–drain diode forward voltage
VDF
—
0.9
90
—
IF = 10 A, VGS = 0
Body–drain diode reverse recovery
time
trr
—
—
ns
IF = 10 A, VGS = 0
diF/ dt = 50 A/ µs
Note: 4. Pulse test
Rev.3.00 Sep 07, 2005 page 2 of 7
2SK3212
Main Characteristics
Power vs. Temperature Derating
Maximum Safe Operation Area
100
50
40
30
20
10
20
10
5
2
1
Operation in
this area is
0.5
limited by R
DS(on)
0.2
0.1
Ta = 25°C
0
10 20
100
50
200
1
2
5
50
100
150
200
Case Temperature TC (°C)
Drain to Source Voltage VDS (V)
Typical Output Characteristics
Typical Transfer Characteristics
10
8
10
8
10 V
Pulse Test
VDS = 10 V
Pulse Test
3.5 V
6 V
4 V
6
6
3 V
4
4
Tc = 75°C
–25°C
2
2
VGS =2.5 V
25°C
0
0
1
2
3
4
5
2
4
6
8
10
Drain to Source Voltage VDS (V)
Gate to Source Voltage VGS (V)
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
Static Drain to Source on State
Resistance vs. Drain Current
500
2.5
2.0
1.5
1.0
0.5
Pulse Test
Pulse Test
200
100
50
VGS = 4 V
10 V
ID = 5 A
20
10
2 A
12
1 A
16
0
4
8
20
0.1 0.2 0.5
1
2
5
10 20 50
Gate to Source Voltage VGS (V)
Drain Current ID (A)
Rev.3.00 Sep 07, 2005 page 3 of 7
2SK3212
Static Drain to Source on State
Resistance vs. Temperature
Forward Transfer Admittance
vs. Drain Current
50
500
400
300
200
100
Pulse Test
20
10
5
Tc = –25°C
25°C
1, 2 A
5 A
VGS = 4 V
75°C
2
5 A
1, 2 A
10 V
1
VDS = 10 V
Pulse Test
0
0.5
–40
0
40
80
120
160
0.1 0.3
1
3
10
30
100
Case Temperature TC (°C)
Drain Current ID (A)
Body to Drain Diode Reverse
Recovery Time
Typical Capacitance
vs. Drain to Source Voltage
1000
500
5000
di / dt = 50 A / µs
VGS = 0, Ta = 25°C
2000
1000
500
200
100
50
Ciss
200
Coss
Crss
100
50
20
10
VGS = 0
20
10
f = 1 MHz
0.1 0.3
1
3
10
30
100
0
10
20
30
40
50
Reverse Drain Current IDR (A)
Drain to Source Voltage VDS (V)
Dynamic Input Characteristics
ID = 5 A
Switching Characteristics
500
300
200
160
120
80
20
VDD = 100 V
50 V
25 V
t
d(off)
16
12
8
100
t
f
VGS
30
10
t
r
t
d(on)
40
4
0
3
1
VDD = 100 V
50 V
25 V
VGS = 10 V, VDD = 30 V
VDS
PW = 5 µs, duty < 1 %
0
3
1
8
16
24
32
40
0.1
0.3
10
30100
Drain Current ID (A)
Gate Charge Qg (nc)
Rev.3.00 Sep 07, 2005 page 4 of 7
2SK3212
Reverse Drain Current vs.
Source to Drain Voltage
Maximum Avalanche Energy vs.
Channel Temperature Derating
10
8
10
8
IAP = 10 A
VDD = 50 V
duty < 0.1 %
Rg > 50 Ω
6
6
10 V
4
4
VGS = 0, –5 V
5 V
2
2
0
Pulse Test
1.6 2.0
0
0.4
0.8
1.2
25
50
75
100
125
150
Source to Drain Voltage VSD (V)
Channel Temperature Tch (°C)
Normalized Transient Thermal Impedance vs. Pulse Width
3
1
Tc = 25°C
D = 1
0.5
0.3
0.1
θ
θ
γ
θ
ch – c(t) = s (t) • ch – c
ch – c = 6.25°C/W, Tc = 25°C
PW
T
P
DM
D =
0.03
0.01
PW
T
10 µ
100 µ
1 m
10 m
100 m
1
10
Pulse Width PW (S)
Avalanche Test Circuit
Avalanche Waveform
VDSS
VDSS – VDD
L
1
2
2
EAR
=
• L • IAP •
VDS
Monitor
IAP
Monitor
V(BR)DSS
IAP
Rg
VDS
VDD
D. U. T
ID
Vin
50 Ω
15 V
VDD
0
Rev.3.00 Sep 07, 2005 page 5 of 7
2SK3212
Switching Time Test Circuit
Vin Monitor
Switching Time Waveforms
90%
Vout
Monitor
D.U.T.
RL
10%
10%
Vin
Vout
10%
VDD
= 30 V
Vin
10 V
50 Ω
90%
90%
t
t
t
r
d(on)
t
f
d(off)
Rev.3.00 Sep 07, 2005 page 6 of 7
2SK3212
Package Dimensions
JEITA Package Code
SC-67
RENESAS Code
Package Name
MASS[Typ.]
1.8g
Unit: mm
PRSS0003AD-A
TO-220FM / TO-220FMV
10.0 0.3
7.0 0.3
2.8 0.2
2.5 0.2
φ 3.2 0.2
1.2 0.2
1.4 0.2
4.45 0.3
2.5
0.7 0.1
2.54 0.5
2.54 0.5
0.5 0.1
Ordering Information
Part Name
Quantity
Shipping Container
2SK3212-E
500 pcs
Box (Sack)
Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of
production before ordering the product.
Rev.3.00 Sep 07, 2005 page 7 of 7
Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
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Colophon .3.0
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