2SK2084L [RENESAS]
Silicon N Channel MOS FET; 硅N沟道MOS FET
| 型号： | 2SK2084L |
| 厂家： | 
RENESAS TECHNOLOGY CORP |
| 描述： | Silicon N Channel MOS FET |
| 文件： | 总8页 (文件大小：88K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2SK2084(L), 2SK2084(S)
Silicon N Channel MOS FET
REJ03G0995-0200
(Previous: ADE-208-1342)
Rev.2.00
Sep 07, 2005
Application
High speed power switching
Features
•
•
•
•
•
Low on-resistance
High speed switching
Low drive current
4 V gate drive device can be driven from 5 V source
Suitable for switching regulator, DC - DC converter
Outline
RENESAS Package code: PRSS0004ZD-B
(Package name: DPAK(L)-(2))
RENESAS Package code: PRSS0004ZD-C
(Package name: DPAK(S))
D
4
4
1. Gate
G
2. Drain
3. Source
4. Drain
1
2
3
1
S
2
3
Rev.2.00 Sep 07, 2005 page 1 of 7
2SK2084(L), 2SK2084(S)
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Symbol
VDSS
Ratings
Unit
20
V
V
VGSS
±20
ID
7
A
1
Drain peak current
ID(pulse)
IDR
Pch*2
*
28
A
Body to drain diode reverse drain current
Channel dissipation
7
20
A
W
°C
°C
Channel temperature
Tch
150
Storage temperature
Tstg
–55 to +150
Notes: 1. PW ≤10 µs, duty cycle ≤ 1 %
2. Value at Tc = 25°C
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
20
±20
—
—
1.0
—
—
5
Typ
—
Max
—
Unit
Test conditions
Drain to source breakdown voltage
Gate to source breakdown voltage
Gate to source leak current
Zero gate voltage drain current
Gate to source cutoff voltage
V(BR)DSS
V(BR)GSS
IGSS
V
V
ID = 10 mA, VGS = 0
—
—
IG = ±100 µA, VDS = 0
VGS = ±16 V, VDS = 0
VDS = 16 V, VGS = 0
ID = 1 mA, VDS = 10 V
ID = 4 A, VGS = 10 V*3
ID = 4 A, VGS = 4 V*3
ID = 4 A, VDS = 10 V*3
—
±10
100
2.5
0.053
0.075
—
µA
µA
V
IDSS
—
VGS(off)
RDS(on)
—
Static drain to source on state
resistance
0.04
0.058
9
Ω
Ω
Forward transfer admittance
Input capacitance
|yfs|
Ciss
Coss
Crss
td(on)
tr
S
—
—
—
—
—
—
—
—
—
800
680
165
15
—
pF
pF
pF
ns
ns
ns
ns
V
VDS = 10 V, VGS = 0,
f = 1 MHz
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
—
—
—
ID = 4 A, VGS = 10 V,
RL = 5 Ω
60
—
Turn-off delay time
Fall time
td(off)
tf
100
80
—
—
Body to drain diode forward voltage
VDF
trr
0.9
80
—
IF = 7 A, VGS = 0
Body to drain diode reverse recovery
time
—
ns
IF = 7 A, VGS = 0,
diF / dt = 20 A / µs
Note: 3. Pulse Test
Rev.2.00 Sep 07, 2005 page 2 of 7
2SK2084(L), 2SK2084(S)
Main Characteristics
Power vs. Temperature Derating
Maximum Safe Operation Area
40
30
20
10
50
30
10 µ
s
100 µs
10
3
1
Operation in
this area is
limited by R
DS(on)
0.3
0.1
Ta = 25°C
0
50
100
150
200
0.3
1
3
10
30
Case Temperature TC (°C)
Drain to Source Voltage VDS (V)
Typical Output Characteristics
Typical Transfer Characteristics
20
16
12
8
20
16
12
8
10 V
6 V
4 V
Pulse Test
VDS = 10 V
Pulse Test
3.5 V
3 V
Tc = 75°C
25°C
4
4
VGS = 2.5 V
–25°C
0
0
1
2
3
4
5
2
4
6
8
10
Drain to Source Voltage VDS (V)
Gate to Source Voltage VGS (V)
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
Static Drain to Source on State
Resistance vs. Drain Current
0.2
0.5
0.4
0.3
0.2
0.1
Pulse Test
Pulse Test
0.1
VGS = 4 V
ID = 5 A
0.05
10 V
0.02
0.01
2 A
1 A
0
2
4
6
8
10
0.1 0.2
0.5
1
2
5
10 20
Gate to Source Voltage VGS (V)
Drain Current ID (A)
Rev.2.00 Sep 07, 2005 page 3 of 7
2SK2084(L), 2SK2084(S)
Static Drain to Source on State
Resistance vs. Temperature
Forward Transfer Admittance
vs. Drain Current
20
10
5
0.20
0.16
0.12
0.08
0.04
Pulse Test
VDS = 10 V
Pulse Test
5 A
Tc = –25°C
25°C
75°C
1 A
2 A
VGS = 4 V
2
1
1 A
2 A
5 A
10 V
40
0
0.5
0.1 0.2
0.5
1
2
5
10
–40
0
80
120
160
Case Temperature TC (°C)
Drain Current ID (A)
Body to Drain Diode Reverse
Recovery Time
Typical Capacitance vs.
Drain to Source Voltage
10000
200
100
50
Ciss
1000
100
10
Coss
di / dt = 20 A / µs
VGS = 0, Ta = 25°C
Crss
20
10
VGS = 0
f = 1 MHz
0.1 0.2
0.5
1
2
5
10
0
4
8
12
16
20
Reverse Drain Current IDR (A)
Drain to Source Voltage VDS (V)
Dynamic Input Characteristics
Switching Characteristics
50
40
30
20
10
20
200
100
50
t
d(off)
16
12
8
VGS
VDD = 20 V
10 V
5 V
t
f
VDS
VGS = 10 V
VDD = 20 V
PW = 5 µs
duty < 1 %
t
r
20
10
t
d(on)
4
0
VDD = 20 V
10 V
5 V
0
8
16
24
32
40
0.1 0.2
0.5
1
2
5
10
Drain Current ID (A)
Gate Charge Qg (nc)
Rev.2.00 Sep 07, 2005 page 4 of 7
2SK2084(L), 2SK2084(S)
Reverse Drain Current vs.
Source to Drain Voltage
20
16
12
8
Pulse Test
10 V
5 V
VGS = 0, –5 V
4
0
0.4
Source to Drain Voltage VSD (V)
Normalized Transient Thermal Impedance vs. Pulse Width
0.8
1.2
1.6
2.0
3
Tc = 25°C
D = 1
0.5
1
0.3
0.1
θch – c(t) = γs (t) • θch – c
θch – c = 6.25°C/W, Tc = 25°C
PW
T
P
DM
D =
0.03
0.01
PW
T
10 µ
100 µ
1 m
10 m
100 m
1
10
Pulse Width PW (s)
Switching Time Test Circuit
Vin Monitor
Waveforms
Vout
Monitor
90%
D.U.T.
R
10%
10%
Vin
L
Vout
10%
VDD
= 20 V
Vin
50 Ω
10 V
90%
90%
t
t
d(off)
d(on)
t
r
t
f
Rev.2.00 Sep 07, 2005 page 5 of 7
2SK2084(L), 2SK2084(S)
Package Dimensions
JEITA Package Code
RENESAS Code
Package Name
MASS[Typ.]
0.42g
Unit: mm
PRSS0004ZD-B
DPAK(L)-(2) / DPAK(L)-(2)V
6.5 0.5
5.4 0.5
2.3 0.2
0.55 0.1
1.15 0.1
1.2 0.3
0.8 0.1
(0.7)
0.55 0.1
0.55 0.1
2.29 0.5
2.29 0.5
JEITA Package Code
SC-63
RENESAS Code
PRSS0004ZD-C
Package Name
MASS[Typ.]
0.28g
Unit: mm
DPAK(S) / DPAK(S)V
2.3 0.2
6.5 0.5
5.4 0.5
(5.1)
0.55 0.1
(0.1)
(0.1)
0 – 0.25
(1.2)
0.55 0.1
1.0 Max.
0.8 0.1
2.29 0.5
2.29 0.5
Rev.2.00 Sep 07, 2005 page 6 of 7
2SK2084(L), 2SK2084(S)
Ordering Information
Part Name
Quantity
Shipping Container
2SK2084L-E
3000 pcs
3000 pcs
Box (Sack)
Taping
2SK2084STL-E
Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of
production before ordering the product.
Rev.2.00 Sep 07, 2005 page 7 of 7
Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
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Colophon .3.0
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