2SK2084S [KEXIN]
Silicon N-Channel MOSFET; 硅N沟道MOSFET
| 型号： | 2SK2084S |
| 厂家： | 
GUANGDONG KEXIN INDUSTRIAL CO.,LTD |
| 描述： | Silicon N-Channel MOSFET |
| 文件： | 总1页 (文件大小：44K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SMD Type
MOSFET
Silicon N-Channel MOSFET
2SK2084S
Features
TO-252
Unit: mm
Low on-resistance
+0.15
-0.15
+0.1
2.30
-0.1
6.50
+0.2
5.30
-0.2
+0.8
0.50
-0.7
High speed switching
Low drive current
Suitable for Switching regulator, DC - DC converter
0.127
max
+0.1
0.80
-0.1
+0.1
0.60
-0.1
2.3
4.60
1 Gate
+0.15
-0.15
2 Drain
3 Source
Absolute Maximum Ratings Ta = 25
Parameter
Drain to source voltage
Gate to source voltage
Drain current
Symbol
VDSS
VGSS
ID
Rating
Unit
V
20
V
20
7
20
A
Power dissipation
PD
W
Channel temperature
Storage temperature
Tch
150
Tstg
-55 to +150
Electrical Characteristics Ta = 25
Parameter
Symbol
IDSS
IGSS
VGS(off) VDS=10V,ID=1mA
Testconditons
Min
Typ
Max
100
10
Unit
A
Drain cut-off current
VDS=16V,VGS=0
Gate leakage current
VGS= 16V,VDS=0
A
Gate to source cutoff voltage
Forward transfer admittance
1.0
5
2.5
V
VDS=10V,ID=4A
VGS=10V,ID=4A
VGS=4V,ID=4A
9
0.04 0.053
S
Yfs
Drain to source on-state resistance
RDS(on)
0.058 0.075
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Ciss
Coss
Crss
td(on)
tr
800
680
165
15
pF
pF
pF
ns
ns
ns
ns
VDS=10V,VGS=0,f=1MHZ
60
ID=4A,VGS(on)=10V,RL=5
Turn-off delay time
Fall time
td(off)
tf
100
80
1
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