2SK2084S [HITACHI]
Silicon N-Channel MOS FET; 硅N沟道MOS FET
| 型号： | 2SK2084S |
| 厂家： | 
HITACHI SEMICONDUCTOR |
| 描述： | Silicon N-Channel MOS FET |
| 文件： | 总10页 (文件大小：49K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2SK2084(L), 2SK2084(S)
Silicon N-Channel MOS FET
Application
High speed power switching
Features
•
•
•
•
•
Low on-resistance
High speed switching
Low drive current
4 V gate drive device can be driven from 5 V source
Suitable for Switching regulator, DC - DC converter
Outline
DPAK-2
4
4
1
2
3
1
2
3
D
1. Gate
G
2. Drain
3. Source
4. Drain
S
2SK2084(L), 2SK2084(S)
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
VDSS
Ratings
Unit
V
Drain to source voltage
Gate to source voltage
Drain current
20
VGSS
±20
V
ID
7
A
1
Drain peak current
ID(pulse)
*
28
A
Body to drain diode reverse drain current
Channel dissipation
Channel temperature
Storage temperature
IDR
7
A
Pch*2
Tch
20
W
°C
°C
150
Tstg
–55 to +150
Notes 1. PW ≤ 10 µs, duty cycle ≤ 1 %
2. Value at Tc = 25°C
2
2SK2084(L), 2SK2084(S)
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Typ
Max
Unit
Test conditions
Drain to source breakdown
voltage
V(BR)DSS
V(BR)GSS
IGSS
20
—
—
V
ID = 10 mA, VGS = 0
Gate to source breakdown
voltage
±20
—
—
V
IG = ±100 µA, VDS = 0
Gate to source leak current
—
—
1.0
—
—
±10
100
2.5
µA
µA
V
VGS = ±16 V, VDS = 0
VDS = 16 V, VGS = 0
ID = 1 mA, VDS = 10 V
ID = 4 A
Zero gate voltage drain current IDSS
—
Gate to source cutoff voltage
VGS(off)
—
Static drain to source on state RDS(on)
resistance
0.04
0.053
Ω
V
GS = 10 V*1
ID = 4 A
GS = 4 V*1
ID = 4 A
DS = 10 V*1
—
5
0.058 0.075
Ω
V
Forward transfer admittance
|yfs|
9
—
S
V
Input capacitance
Output capacitance
Ciss
—
—
—
—
—
—
—
—
800
680
165
15
—
—
—
—
—
—
—
—
pF
pF
pF
ns
ns
ns
ns
V
VDS = 10 V
VGS = 0
Coss
Reverse transfer capacitance Crss
f = 1 MHz
ID = 4 A
Turn-on delay time
Rise time
td(on)
tr
td(off)
tf
60
VGS = 10 V
RL = 5 Ω
Turn-off delay time
Fall time
100
80
Body to drain diode forward
voltage
VDF
0.9
IF = 7 A, VGS = 0
Body to drain diode reverse
recovery time
trr
—
80
—
ns
IF = 7 A, VGS = 0,
diF / dt = 20 A / µs
Note 1. Pulse Test
3
2SK2084(L), 2SK2084(S)
Power vs. Temperature Derating
40
Maximum Safe Operation Area
10 µs
50
30
100 µs
30
20
10
10
3
1
Operation in
this area is
limited by R
DS(on)
0.3
0.1
Ta = 25 °C
0
50
100
150
200
0.3
1
3
10
30
Drain to Source Voltage
V
(V)
DS
Case Temperature Tc (°C)
Typical Output Characteristics
Typical Transfer Characteristics
20
16
12
8
20
10 V
6 V
Pulse Test
V
= 10 V
4 V
DS
16
12
8
Pulse Test
3.5 V
3 V
Tc = 75 °C
4
4
V
GS
= 2.5 V
25 °C
–25 °C
0
2
4
6
8
10
0
1
2
3
4
GS
5
Drain to Source Voltage
V
(V)
DS
Gate to Source Voltage
V
(V)
4
2SK2084(L), 2SK2084(S)
Static Drain to Source State Resistance
vs. Drain Current
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
0.2
0.5
0.4
0.3
0.2
0.1
Pulse Test
Pulse Test
0.1
V
= 4 V
10 V
GS
0.05
I
= 5 A
D
0.02
0.01
2 A
1 A
0.1 0.2
0.5
1
2
5
10 20
0
2
4
6
8
10
Gate to Source Voltage
V
(V)
GS
Drain Current
I
(A)
D
Forward Transfer Admittance vs.
Drain Current
Static Drain to Source on State Resistance
vs. Temperature
20
10
5
0.20
Pulse Test
V
= 10 V
DS
Pulse Test
0.16
0.12
0.08
0.04
5 A
1 A
Tc = –25 °C
25 °C
75 °C
2
1
V
= 4 V
GS
2 A
1 A
2 A
5 A
10 V
40
0.5
0
–40
0.1 0.2
0.5
1
2
5
10
0
80
120
160
Drain Current I (A)
Case Temperature Tc (°C)
D
5
2SK2084(L), 2SK2084(S)
Typical Capacitance vs.
Drain to Source Voltage
Body to Drain Diode Reverse
Recovery Time
10000
200
100
Ciss
1000
100
10
Coss
50
di / dt = 20 A / µs
Crss
V
= 0, Ta = 25 °C
GS
20
10
V
= 0
GS
f = 1 MHz
0
4
8
12
16
20
0.1 0.2
0.5
1
2
5
10
Reverse Drain Current
I
(A)
DR
Drain to Source Voltage V
(V)
DS
Switching Characteristics
Dynamic Input Characteristics
200
100
50
50
20
16
12
8
t
t
d(off)
40
30
20
10
V
GS
V
= 20 V
10 V
5 V
DD
f
V
DS
V
V
= 10 V
= 20 V
GS
DD
t
r
PW = 5 µs
duty < 1 %
20
10
t
d(on)
4
0
V
= 20 V
10 V
5 V
DD
16
0.1 0.2
0.5
1
2
5
10
0
8
24
32
40
Drain Current
I
(A)
Gate Charge Qg (nc)
D
6
2SK2084(L), 2SK2084(S)
Reverse Drain Current vs.
Souece to Drain Voltage
20
16
12
8
Pulse Test
10 V
5 V
V
= 0, –5 V
GS
4
0
0.4
0.8
1.2
1.6
SD
2.0
(V)
Source to Drain Voltage
V
Normalized Transient Thermal Impedance vs. Pulse Width
3
1
Tc = 25°C
D = 1
0.5
0.3
0.1
θ
θ
γ
θ
ch – c(t) = s (t) • ch – c
ch – c = 6.25 °C/W, Tc = 25 °C
PW
T
P
DM
D =
0.03
0.01
PW
T
10 µ
100 µ
1 m
10 m
100 m
1
10
Pulse Width PW (S)
7
2SK2084(L), 2SK2084(S)
Switching Time Test Circuit
Waveform
Vout
Monitor
Vin Monitor
D.U.T.
90%
R
L
10%
10%
90%
Vin
V
DD
Vin
10 V
Vout
10%
50Ω
= 20 V
90%
td(off)
td(on)
t
f
tr
8
Unit: mm
6.5 ± 0.5
5.4 ± 0.5
2.3 ± 0.2
0.55 ± 0.1
1.15 ± 0.1
0.8 ± 0.1
(0.7)
1.2 ± 0.3
0.55 ± 0.1
0.55 ± 0.1
2.29 ± 0.5
2.29 ± 0.5
Hitachi Code
DPAK (L)-(2)
JEDEC
EIAJ
—
—
Weight (reference value) 0.42 g
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-
safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor
products.
Hitachi, Ltd.
Semiconductor & Integrated Circuits.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109
URL
NorthAmerica
Europe
: http:semiconductor.hitachi.com/
: http://www.hitachi-eu.com/hel/ecg
Asia (Singapore)
Asia (Taiwan)
: http://www.has.hitachi.com.sg/grp3/sicd/index.htm
: http://www.hitachi.com.tw/E/Product/SICD_Frame.htm
Asia (HongKong) : http://www.hitachi.com.hk/eng/bo/grp3/index.htm
Japan
: http://www.hitachi.co.jp/Sicd/indx.htm
For further information write to:
Hitachi Semiconductor
(America) Inc.
Hitachi Europe GmbH
Hitachi Asia (Hong Kong) Ltd.
Group III (Electronic Components)
7/F., North Tower, World Finance Centre,
Harbour City, Canton Road, Tsim Sha Tsui,
Kowloon, Hong Kong
Tel: <852> (2) 735 9218
Fax: <852> (2) 730 0281
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16 Collyer Quay #20-00
Hitachi Tower
Singapore 049318
Tel: 535-2100
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Germany
Tel: <49> (89) 9 9180-0
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179 East Tasman Drive,
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Fax: 535-1533
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Taipei Branch Office
3F, Hung Kuo Building. No.167,
Tun-Hwa North Road, Taipei (105)
Tel: <886> (2) 2718-3666
Fax: <886> (2) 2718-8180
Telex: 40815 HITEC HX
Hitachi Europe Ltd.
Electronic Components Group.
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Lower Cookham Road
Maidenhead
Berkshire SL6 8YA, United Kingdom
Tel: <44> (1628) 585000
Fax: <44> (1628) 778322
Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan.
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