2SK1336-E [RENESAS]
300mA, 60V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92, TO-92, 3 PIN;
| 型号： | 2SK1336-E |
| 厂家： | 
RENESAS TECHNOLOGY CORP |
| 描述： | 300mA, 60V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92, TO-92, 3 PIN 开关 晶体管 |
| 文件： | 总10页 (文件大小：56K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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Regarding the change of names mentioned in the document, such as Hitachi
Electric and Hitachi XX, to Renesas Technology Corp.
The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas
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and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.)
Accordingly, although Hitachi, Hitachi, Ltd., Hitachi Semiconductors, and other Hitachi brand
names are mentioned in the document, these names have in fact all been changed to Renesas
Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and
corporate statement, no changes whatsoever have been made to the contents of the document, and
these changes do not constitute any alteration to the contents of the document itself.
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Renesas Technology Corp.
Customer Support Dept.
April 1, 2003
Cautions
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2SK1336
Silicon N-Channel MOS FET
ADE-208-1273 (Z)
1st. Edition
Mar. 2001
Application
High speed power switching
Features
•
•
•
•
Low on-resistance
High speed switching
Low drive current
4 V gate drive device
Can be driven from 5 V source
•
Suitable for motor drive, DC-DC converter, power switch and solenoid drive
Outline
TO-92
3
2
1
D
1. Source
2. Drain
3. Gate
G
S
2SK1336
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
VDSS
Ratings
60
Unit
V
Drain to source voltage
Gate to source voltage
Drain current
VGSS
±20
V
ID
0.3
A
1
Drain peak current
ID(pulse)
IDR
*
1.2
A
Body to drain diode reverse drain current
Channel dissipation
0.3
A
Pch
Tch
Tstg
400
mW
°C
°C
Channel temperature
Storage temperature
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
150
–55 to +150
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Typ
Max
Unit
Test conditions
Drain to source breakdown
voltage
V(BR)DSS 60
—
—
V
ID = 10 mA, VGS = 0
Gate to source breakdown
voltage
V(BR)GSS ±20
—
—
V
IG = ±100 µA, VDS = 0
Gate to source leak current
IGSS
—
—
1.0
—
—
—
—
1.3
±10
50
µA
µA
V
VGS = ±16 V, VDS = 0
VDS = 50 V, VGS = 0
Zero gate voltage drain current IDSS
Gate to source cutoff voltage
VGS(off)
2.0
1.7
ID = 1 mA, VDS = 10 V
ID = 0.2 A, VGS = 10 V *1
Static drain to source on state RDS(on)
resistance
Ω
—
0.22
—
—
—
—
—
—
—
—
1.8
0.35
33
17
5
2.5
—
—
—
—
—
—
—
—
—
Ω
ID = 0.2 A, VGS = 4 V *1
ID = 0.2 A, VDS = 10 V *1
VDS = 10 V, VGS = 0,
f = 1 MHz
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
|yfs|
Ciss
Coss
Crss
td(on)
tr
S
pF
pF
pF
ns
ns
ns
ns
V
2
ID = 0.2 A, VGS = 10 V,
4
RL = 150 Ω
Turn-off delay time
Fall time
td(off)
tf
18
16
0.9
Body to drain diode forward
voltage
VDF
IF = 0.3 A, VGS = 0
Body to drain diode reverse
recovery time
trr
—
45
—
ns
IF = 0.3 A, VGS = 0,
diF/dt = 50 A/µs
Note: 1. Pulse test
2
2SK1336
Maximum Safe Operation Area
Power vs. Temperature Derating
5
3
600
400
200
1
0.3
0.1
0.03
Ta = 25°C
0.01
0.005
0.1 0.3
1
3
10
30
100
0
50
100
150
Drain to Source Voltage VDS (V)
Ambient Temperarure Ta (°C)
Typical Output Characteristics
Typical Transfer Characteristics
1.0
0.8
0.6
0.4
0.2
1.0
0.8
0.6
0.4
0.2
10 V 6 V
Pulse Test
3.5 V
VDS = 10 V
Pulse Test
4 V
3 V
2.5 V
25°C
TC = 75°C
–25°C
VGS = 2 V
8
0
2
4
6
10
0
1
2
3
4
5
Drain to Source Voltage VDS (V)
Gate to Source Voltage VGS (V)
3
2SK1336
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
Static Drain to Source on State
Resistance vs. Drain Current
1.0
0.8
0.6
0.4
0.2
50
20
Pulse Test
Pulse Test
0.5 A
10
5
0.2 A
VGS = 4 V
2
ID = 0.1A
10 V
1
0.5
0
2
4
6
8
10
0.05 0.1 0.2
0.5
1
2
5
Gate to Source Voltage VGS (V)
Drain Current ID (A)
Static Drain to Source on State
Resistance vs. Temperature
Forward Transfer Admittance
vs. Drain Current
5
4
3
2
1
0
5
Pulse Test
VDS = 10 V
Pulse Test
2
1
0.2 A
ID = 0.5 A
25°C
–25°C
0.5
0.1 A
0.5 A
VGS = 4 V
0.2
0.1
TC = 75°C
0.2 A
0.1 A
10 V
0.05
0.02
0.05 0.1 0.2
0.5
1
2
–40
0
40
80
120
160
Drain Current ID (A)
Case Temperature TC (°C)
4
2SK1336
Typical Capacitance vs.
Drain to Source Voltage
Body to Drain Diode Reverse
Recovery Time
100
10
1
1,000
500
di/dt = 50 A/µs
VGS = 0, Ta = 25°C
Pulse Test
Ciss
Coss
200
Crss
100
50
20
10
VGS = 0
f = 1 MHz
0.1
0
10
20
30
40
50
0.05 0.1 0.2
0.5
1
2
5
Drain to Source Voltage VDS (V)
Reverse Drain Current IDR (A)
Switching Characteristics
Dynamic Input Characteristics
100
50
100
80
60
40
20
20
VGS = 10 V, PW = 2 µs
duty < 1%, VDD = 30 V
.
.
VDD = 10 V
25 V
16
12
8
tf
50 V
td (off)
20
VDS
VGS
10
5
tr
td (on)
4
ID = 0.3 A
2
1
VDD = 50 V
25 V
10 V
0
0
0
0.05 0.1 0.2
0.5
1
2
5
0.8
1.6
2.4
3.2
4.0
Drain Current ID (A)
Gate Charge Qg (nc)
5
2SK1336
Reverse Drain Current vs.
Source to Drain Voltage
1.0
0.8
0.6
0.4
0.2
Pulse Test
10 V
5 V
VGS = 0, –5 V
1.2 1.6
Source to Drain Voltage VSD (V)
0
0.4
0.8
2.0
6
2SK1336
Package Dimensions
As of January, 2001
Unit: mm
4.8 ± 0.4
3.8 ± 0.4
0.60 Max
0.55Max
0.5Max
1.27
2.54
Hitachi Code
JEDEC
EIAJ
TO-92 (1)
Conforms
Conforms
0.25 g
Mass (reference value)
7
2SK1336
Cautions
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copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-
safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
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written approval from Hitachi.
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products.
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