2SK1337RF [RENESAS]
0.3A, 100V, 6.5ohm, N-CHANNEL, Si, POWER, MOSFET, TO-92;
| 型号： | 2SK1337RF |
| 厂家： | 
RENESAS TECHNOLOGY CORP |
| 描述： | 0.3A, 100V, 6.5ohm, N-CHANNEL, Si, POWER, MOSFET, TO-92 晶体 晶体管 功率场效应晶体管 |
| 文件： | 总7页 (文件大小：75K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2SK1337
Silicon N Channel MOS FET
REJ03G0934-0200
(Previous: ADE-208-1274)
Rev.2.00
Sep 07, 2005
Application
High speed power switching
Features
•
•
•
•
Low on-resistance
High speed switching
Low drive current
4 V gate drive device
Can be driven from 5 V source
•
Suitable for motor drive, DC-DC converter, power switch and solenoid drive
Outline
RENESAS Package code: PRSS0003ZA-A
(Package name: TO-92(1))
D
1. Source
2. Drain
3. Gate
G
3
2
1
S
Rev.2.00 Sep 07, 2005 page 1 of 6
2SK1337
Absolute Maximum Ratings
(Ta = 25°C)
Unit
Item
Drain to source voltage
Gate to source voltage
Drain current
Symbol
VDSS
VGSS
ID
Ratings
100
V
V
±20
0.3
A
*1
Drain peak current
ID(pulse)
1.2
A
Body to drain diode reverse drain current
Channel dissipation
IDR
Pch
Tch
Tstg
0.3
A
400
mW
°C
°C
Channel temperature
150
Storage temperature
–55 to +150
Note: 1. PW ≤ 10 µs, duty cycle ≤ 1%
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
100
±20
—
Typ
Max
—
Unit
V
Test conditions
ID = 10 mA, VGS = 0
Drain to source breakdown voltage
Gate to source breakdown voltage
Gate to source leak current
Zero gate voltage drain current
Gate to source cutoff voltage
V(BR)DSS
V(BR)GSS
IGSS
—
—
—
V
IG = ±100 µA, VDS = 0
VGS = ±16 V, VDS = 0
VDS = 80 V, VGS = 0
—
±10
50
2.0
4.5
6.5
—
µA
µA
V
IDSS
—
—
VGS(off)
RDS(on)
1.0
—
—
ID = 1 mA, VDS = 10 V
ID = 0.2 A, VGS = 10 V *2
ID = 0.2 A, VGS = 4 V *2
ID = 0.2 A, VDS = 10 V *2
Static drain to source on state
resistance
3.5
4.0
0.35
35
14
3.5
2
Ω
—
Ω
Forward transfer admittance
Input capacitance
|yfs|
Ciss
Coss
Crss
td(on)
tr
0.22
—
S
—
pF
pF
pF
ns
ns
ns
ns
V
VDS = 10 V, VGS = 0,
f = 1 MHz
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
—
—
—
—
—
—
ID = 0.2 A, VGS = 10 V,
RL = 150 Ω
—
4
—
Turn-off delay time
Fall time
td(off)
tf
—
17
15
0.9
80
—
—
—
Body to drain diode forward voltage
VDF
trr
—
—
IF = 0.3 A, VGS = 0
Body to drain diode reverse recovery
time
—
—
ns
IF = 0.3 A, VGS = 0,
diF/dt = 50 A/µs
Note: 2. Pulse test
Rev.2.00 Sep 07, 2005 page 2 of 6
2SK1337
Main Characteristics
Power vs. Temperature Derating
Maximum Safe Operation Area
600
400
200
5
2
1
10
µ
0.5
s
0.2
0.1
DS (on)
n this area
y R
DC Operation
Operation i
is limited b
0.05
0.02
0.01
Ta = 25°C
0.005
0
50
100
150
0.1 0.3
1
3
10
30
100
Drain to Source Voltage VDS (V)
Ambient Temperature Ta (°C)
Typical Output Characteristics
Typical Transfer Characteristics
VDS = 10 V
Pulse Test
1.0
1.0
10 V
Pulse Test
VGS = 4 V
5 V
–25°C
0.8
0.6
0.4
0.2
0.8
0.6
0.4
0.2
TC = 25°C
75°C
3.5 V
3 V
2.5 V
12
0
4
8
16
20
0
2
4
6
8
10
Drain to Source Voltage VDS (V)
Gate to Source Voltage VGS (V)
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
Static Drain to Source on State
Resistance vs. Drain Current
50
5
4
3
2
1
Pulse Test
Pulse Test
20
10
VGS = 4 V
5
ID = 0.5 A
10 V
2
1
0.2 A
0.1 A
0.5
0
2
4
6
8
10
0.02 0.05 0.1 0.2
0.5
1
2
Gate to Source Voltage VGS (V)
Drain Current ID (A)
Rev.2.00 Sep 07, 2005 page 3 of 6
2SK1337
Static Drain to Source on State
Resistance vs. Temperature
Forward Transfer Admittance
vs. Drain Current
10
5
ID = 0.5 A
Pulse Test
VDS = 10 V
Pulse Test
0.2 A
0.1 A
8
6
4
2
2
1
0.2 A
0.1 A
TC = –25°C
25°C
VGS = 4 V
75°C
0.5
0.5 A
VGS = 10 V
0.2
0.1
0
0.05
–40
0
40
80
120
160
0.02 0.05 0.1 0.2
0.5
1
2
Case Temperature TC (°C)
Drain Current ID (A)
Body to Drain Diode Reverse
Recovery Time
Typical Capacitance vs.
Drain to Source Voltage
500
1,000
VGS = 0
f = 1 MHz
di/dt = 50 A/µs, Ta = 25°C
VGS = 0
200
100
50
100
10
1
Ciss
Coss
20
10
Crss
5
0.02 0.05 0.1 0.2
0.5
1
2
0
10
20
30
40
50
Reverse Drain Current IDR (A)
Drain to Source Voltage VDS (V)
Dynamic Input Characteristics
Switching Characteristics
20
50
200
160
120
80
VDD = 25 V
50 V
td (off)
16
12
8
20
10
80 V
tf
VGS
5
tr
VDS
ID = 0.3 A
td (on)
2
1
VDD = 80 V
40
4
0
•
VGS = 10 V VDD = 30 V
•
50 V
25 V
PW = 2 µs, duty < 0.1%
0
0.5
0
0.8
1.6
2.4
3.2
4.0
0.02 0.05 0.1 0.2
0.5
1
2
Gate Charge Qg (nc)
Drain Current ID (A)
Rev.2.00 Sep 07, 2005 page 4 of 6
2SK1337
Reverse Drain Current vs.
Source to Drain Voltage
1.0
0.8
0.6
0.4
0.2
Pulse Test
VDD = 10 V
5 V
VGS = 0, –5 V
0
0.4
0.8
1.2
1.6
2.0
Source to Drain Voltage VSD (V)
Rev.2.00 Sep 07, 2005 page 5 of 6
2SK1337
Package Dimensions
JEITA Package Code
SC-43A
RENESAS Code
PRSS0003DA-A
Package Name
MASS[Typ.]
0.25g
Unit: mm
TO-92(1) / TO-92(1)V
4.8 0.3
3.8 0.3
0.60 Max
0.55 Max
0.5 Max
1.27
2.54
Ordering Information
Part Name
Quantity
Shipping Container
2SK1337TZ-E
2500 pcs
Taping
Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of
production before ordering the product.
Rev.2.00 Sep 07, 2005 page 6 of 6
Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
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Colophon .3.0
相关型号：
2SK1337TZ
Small Signal Field-Effect Transistor, 0.3A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92
HITACHI
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