2SK1215-D [RENESAS]
VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET;
| 型号： | 2SK1215-D |
| 厂家： | 
RENESAS TECHNOLOGY CORP |
| 描述： | VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET 晶体 小信号场效应晶体管 射频小信号场效应晶体管 光电二极管 放大器 |
| 文件： | 总6页 (文件大小：140K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2SK1215
Silicon N-Channel MOS FET
REJ03G0813-0200
(Previous ADE-208-1176)
Rev.2.00
Aug.10.2005
Application
VHF amplifier
Outline
RENESAS Package code: PTSP0003ZA-A
R
(Package name: CMPAK
)
3
1. Gate
2. Drain
3. Source
1
2
*CMPAK is a trademark of Renesas Technology Corp.
Rev.2.00 Aug 10, 2005 page 1 of 5
2SK1215
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Symbol
Ratings
Unit
1
VDSX
VGSS
ID
*
20
V
V
±5
30
mA
mA
mW
°C
Gate current
IG
±1
Channel power dissipation
Channel temperature
Storage temperature
Note: 1. VGS = –4 V
Pch
Tch
Tstg
100
150
–55 to +150
°C
Electrical Characteristics
(Ta = 25°C)
Item
Drain to source breakdown voltage
Gate cutoff current
Symbol
Min
Typ
—
Max
Unit
V
Test conditions
ID = 100 µA, VGS = –4 V
VGS = ±5 V, VDS = 0
V(BR)DSX
20
—
6
—
±20
12
–2.0
—
IGSS
—
nA
mA
V
1
Drain current
IDSS
*
—
VDS = 10 V, VGS = 0
Gate to source cutoff voltage
Forward transfer admittance
Input capacitance
VGS(off)
|yfs|
0
—
VDS = 10 V, ID = 10 µA
VDS = 10 V, VGS = 0, f = 1 kHz
VDS = 10 V, VGS = 0, f = 1 MHz
8
14
mS
pF
pF
pF
dB
dB
Ciss
Coss
Crss
PG
—
—
—
24
—
2.5
1.6
0.03
—
—
Output capacitance
Reverse transfer capacitance
Power gain
—
—
—
VDS = 10 V, VGS = 0,
f = 100 MHz
Noise figure
NF
—
3
Note: 1. The 2SK1215 is grouped by IDSS as follows.
Grade
E
F
Mark
IDSS
IGE
IGF
6 to 10
8 to 12
Rev.2.00 Aug 10, 2005 page 2 of 5
2SK1215
Typical Output Characteristics
Maximum Channel Dissipation Curve
10
8
600
400
200
6
4
2
50
100
150
0
2
4
6
8
10
10
20
0
Ambient Temperature Ta (°C)
Drain to Source Voltage VDS (V)
Forward Transfer Admittance vs.
Drain to Source Voltage
Typical Transfer Characteristics
10.0
8.0
6.0
4.0
2.0
20
16
12
8
VDS = 10 V
F
E
VGS = 0
f = 1 kHz
4
0
–2.0
–1.6
–1.2
–0.8
–0.4
0
2
4
6
8
0
Gate to Source Voltage VGS (V)
Drain to Source Voltage VDS (V)
Forward Transfer Admittance vs.
Drain Current
Input Capacitance vs.
Drain to Source Voltage
100
50
20
VDS = 10 V
f = 1 kHz
VGS = 0
f = 1 MHz
10
5
20
10
5
2
1.0
0.5
2
1
0.2
0.5 1.0
2
5
10
20
0.5
1.0
2
5
10
Drain Current ID (mA)
Drain to Source Voltage VDS (V)
Rev.2.00 Aug 10, 2005 page 3 of 5
2SK1215
Reverse Transfer Capacitance vs.
Drain to Source Voltage
Output Capacitance vs.
Drain to Source Voltage
0.5
20
10
5
VGS = 0
f = 1 MHz
VGS = 0
f = 1 MHz
0.2
0.1
0.05
2
1.0
0.5
0.02
0.01
0.5
1.0
2
5
10
20
0.5
1.0
2
5
10
20
Drain to Source Voltage VDS (V)
Drain to Source Voltage VDS (V)
Power Gain, Noise Figure vs.
Drain to Source Voltage
35
PG
30
25
20
15
10
5
f = 100 MHz
6
4
2
0
NF
0
2
4
6
8
10
12
Drain to Source Voltage VDS (V)
Rev.2.00 Aug 10, 2005 page 4 of 5
2SK1215
Package Dimensions
JEITA Package Code
SC-70
RENESAS Code
Package Name
MASS[Typ.]
0.006g
PTSP0003ZA-A
CMPAK / CMPAKV
D
A
e
Q
c
E
HE
LP
L
A
A
L1
A3
Reference
Symbol
Dimension in Millimeters
b
Min
0.8
0
Nom
Max
1.1
0.1
1.0
x
S
A
M
e
A
A
A
A
1
2
3
0.8
0.9
0.25
0.32
0.3
A2
A1
b
0.25
0.1
0.4
A
b
1
c
0.13
0.11
2.0
0.15
c
1
D
E
e
1.8
2.2
S
1.15
1.25
0.65
2.1
1.35
e1
b
H
E
1.8
0.3
0.1
0.2
2.4
0.7
L
b1
l1
L
1
0.5
c1
L
P
0.6
0.05
0.45
x
c
b
2
e
1
b2
Pattern of terminal position areas
1.5
0.2
l
1
0.9
A-A Section
Q
Ordering Information
Part Name
Quantity
Shipping Container
φ 178 mm Reel, 8 mm Emboss Taping
φ 178 mm Reel, 8 mm Emboss Taping
2SK1215IGETL
2SK1215IGFTL
3000
3000
Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of
production before ordering the product.
Rev.2.00 Aug 10, 2005 page 5 of 5
Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
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Colophon .3.0
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