2SK1215-E [HITACHI]
RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET;
| 型号： | 2SK1215-E |
| 厂家： | 
HITACHI SEMICONDUCTOR |
| 描述： | RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET 放大器 光电二极管 晶体管 |
| 文件： | 总4页 (文件大小：22K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2SK1215
Silicon N-Channel MOS FET
ADE-208-1176 (Z)
1st. Edition
Mar. 2001
Application
VHF amplifier
Outline
CMPAK
3
1
1. Gate
2. Drain
3. Source
2
2SK1215
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
V
1
Drain to source voltage
Gate to source voltage
Drain current
VDSX
VGSS
ID
*
20
±5
V
30
mA
mA
mW
°C
Gate current
IG
±1
Channel power dissipation
Channel temperature
Storage temperature
Note: 1. VGS = –4 V
Pch
Tch
Tstg
100
150
–55 to +150
°C
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Typ
Max
Unit
Test conditions
Drain to source breakdown
voltage
V(BR)DSX
20
—
—
V
ID = 100 µA, VGS = –4 V
Gate cutoff current
IGSS
—
4
—
±20
12
–2.0
—
nA
mA
V
VGS = ±5 V, VDS = 0
1
Drain current
IDSS
*
—
VDS = 10 V, VGS = 0
Gate to source cutoff voltage
Forward transfer admittance
Input capacitance
VGS(off)
|yfs|
0
—
VDS = 10 V, ID = 10 µA
VDS = 10 V, VGS = 0, f = 1 kHz
VDS = 10 V, VGS = 0, f = 1 MHz
8
14
mS
pF
pF
pF
dB
Ciss
Coss
—
—
—
24
2.5
1.6
0.03
—
—
Output capacitance
—
Reverse transfer capacitance Crss
—
Power gain
PG
—
VDS = 10 V, VGS = 0,
f = 100 MHz
Noise figure
NF
—
—
3
dB
Note: 1. The 2SK1215 is grouped by IDSS as follows.
Grade
Mark
IDSS
D
E
F
IGD
4 to 8
IGE
6 to 10
IGF
8 to 12
See characteristic curves of 2SK359.
2
2SK1215
Package Dimensions
As of January, 2001
Unit: mm
2.0 ± 0.2
+ 0.1
+ 0.1
0.16
0.3
0.3
– 0.06
– 0.05
0 – 0.1
+ 0.1
– 0.05
+ 0.1
– 0.05
0.3
0.65
0.65
1.3 ± 0.2
Hitachi Code
JEDEC
CMPAK
—
EIAJ
Conforms
0.006 g
Mass (reference value)
3
2SK1215
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-
safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor
products.
Hitachi, Ltd.
Semiconductor & Integrated Circuits.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109
URL
NorthAmerica
Europe
Asia
: http://semiconductor.hitachi.com/
: http://www.hitachi-eu.com/hel/ecg
: http://sicapac.hitachi-asia.com
Japan
: http://www.hitachi.co.jp/Sicd/indx.htm
For further information write to:
Hitachi Semiconductor
(America) Inc.
179 East Tasman Drive, Dornacher Straβe 3
Hitachi Europe GmbH
Electronic Components Group
Hitachi Asia Ltd.
Hitachi Tower
16 Collyer Quay #20-00,
Singapore 049318
Hitachi Asia (Hong Kong) Ltd.
Group III (Electronic Components)
7/F., North Tower,
San Jose,CA 95134
D-85622 Feldkirchen, Munich
World Finance Centre,
Tel: <1> (408) 433-1990 Germany
Fax: <1>(408) 433-0223 Tel: <49> (89) 9 9180-0
Fax: <49> (89) 9 29 30 00
Tel : <65>-538-6533/538-8577
Fax : <65>-538-6933/538-3877
URL : http://www.hitachi.com.sg
Harbour City, Canton Road
Tsim Sha Tsui, Kowloon,
Hong Kong
Tel : <852>-(2)-735-9218
Fax : <852>-(2)-730-0281
URL : http://www.hitachi.com.hk
Hitachi Europe Ltd.
Electronic Components Group.
Whitebrook Park
Lower Cookham Road
Maidenhead
Hitachi Asia Ltd.
(Taipei Branch Office)
4/F, No. 167, Tun Hwa North Road,
Hung-Kuo Building,
Taipei (105), Taiwan
Berkshire SL6 8YA, United Kingdom
Tel: <44> (1628) 585000
Fax: <44> (1628) 585160
Tel : <886>-(2)-2718-3666
Fax : <886>-(2)-2718-8180
Telex : 23222 HAS-TP
URL : http://www.hitachi.com.tw
Copyright Hitachi, Ltd., 2000. All rights reserved. Printed in Japan.
Colophon 2.0
4
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