2SK1215IGD [RENESAS]
VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, FET;![2SK1215IGD](http://pdffile.icpdf.com/pdf1/p00153/img/icpdf/2SK12_848283_icpdf.jpg)
型号: | 2SK1215IGD |
厂家: | ![]() |
描述: | VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, FET 晶体 小信号场效应晶体管 射频小信号场效应晶体管 光电二极管 放大器 |
文件: | 总6页 (文件大小:140K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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2SK1215
Silicon N-Channel MOS FET
REJ03G0813-0200
(Previous ADE-208-1176)
Rev.2.00
Aug.10.2005
Application
VHF amplifier
Outline
RENESAS Package code: PTSP0003ZA-A
R
(Package name: CMPAK
)
3
1. Gate
2. Drain
3. Source
1
2
*CMPAK is a trademark of Renesas Technology Corp.
Rev.2.00 Aug 10, 2005 page 1 of 5
2SK1215
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Symbol
Ratings
Unit
1
VDSX
VGSS
ID
*
20
V
V
±5
30
mA
mA
mW
°C
Gate current
IG
±1
Channel power dissipation
Channel temperature
Storage temperature
Note: 1. VGS = –4 V
Pch
Tch
Tstg
100
150
–55 to +150
°C
Electrical Characteristics
(Ta = 25°C)
Item
Drain to source breakdown voltage
Gate cutoff current
Symbol
Min
Typ
—
Max
Unit
V
Test conditions
ID = 100 µA, VGS = –4 V
VGS = ±5 V, VDS = 0
V(BR)DSX
20
—
6
—
±20
12
–2.0
—
IGSS
—
nA
mA
V
1
Drain current
IDSS
*
—
VDS = 10 V, VGS = 0
Gate to source cutoff voltage
Forward transfer admittance
Input capacitance
VGS(off)
|yfs|
0
—
VDS = 10 V, ID = 10 µA
VDS = 10 V, VGS = 0, f = 1 kHz
VDS = 10 V, VGS = 0, f = 1 MHz
8
14
mS
pF
pF
pF
dB
dB
Ciss
Coss
Crss
PG
—
—
—
24
—
2.5
1.6
0.03
—
—
Output capacitance
Reverse transfer capacitance
Power gain
—
—
—
VDS = 10 V, VGS = 0,
f = 100 MHz
Noise figure
NF
—
3
Note: 1. The 2SK1215 is grouped by IDSS as follows.
Grade
E
F
Mark
IDSS
IGE
IGF
6 to 10
8 to 12
Rev.2.00 Aug 10, 2005 page 2 of 5
2SK1215
Typical Output Characteristics
Maximum Channel Dissipation Curve
10
8
600
400
200
6
4
2
50
100
150
0
2
4
6
8
10
10
20
0
Ambient Temperature Ta (°C)
Drain to Source Voltage VDS (V)
Forward Transfer Admittance vs.
Drain to Source Voltage
Typical Transfer Characteristics
10.0
8.0
6.0
4.0
2.0
20
16
12
8
VDS = 10 V
F
E
VGS = 0
f = 1 kHz
4
0
–2.0
–1.6
–1.2
–0.8
–0.4
0
2
4
6
8
0
Gate to Source Voltage VGS (V)
Drain to Source Voltage VDS (V)
Forward Transfer Admittance vs.
Drain Current
Input Capacitance vs.
Drain to Source Voltage
100
50
20
VDS = 10 V
f = 1 kHz
VGS = 0
f = 1 MHz
10
5
20
10
5
2
1.0
0.5
2
1
0.2
0.5 1.0
2
5
10
20
0.5
1.0
2
5
10
Drain Current ID (mA)
Drain to Source Voltage VDS (V)
Rev.2.00 Aug 10, 2005 page 3 of 5
2SK1215
Reverse Transfer Capacitance vs.
Drain to Source Voltage
Output Capacitance vs.
Drain to Source Voltage
0.5
20
10
5
VGS = 0
f = 1 MHz
VGS = 0
f = 1 MHz
0.2
0.1
0.05
2
1.0
0.5
0.02
0.01
0.5
1.0
2
5
10
20
0.5
1.0
2
5
10
20
Drain to Source Voltage VDS (V)
Drain to Source Voltage VDS (V)
Power Gain, Noise Figure vs.
Drain to Source Voltage
35
PG
30
25
20
15
10
5
f = 100 MHz
6
4
2
0
NF
0
2
4
6
8
10
12
Drain to Source Voltage VDS (V)
Rev.2.00 Aug 10, 2005 page 4 of 5
2SK1215
Package Dimensions
JEITA Package Code
SC-70
RENESAS Code
Package Name
MASS[Typ.]
0.006g
PTSP0003ZA-A
CMPAK / CMPAKV
D
A
e
Q
c
E
HE
LP
L
A
A
L1
A3
Reference
Symbol
Dimension in Millimeters
b
Min
0.8
0
Nom
Max
1.1
0.1
1.0
x
S
A
M
e
A
A
A
A
1
2
3
0.8
0.9
0.25
0.32
0.3
A2
A1
b
0.25
0.1
0.4
A
b
1
c
0.13
0.11
2.0
0.15
c
1
D
E
e
1.8
2.2
S
1.15
1.25
0.65
2.1
1.35
e1
b
H
E
1.8
0.3
0.1
0.2
2.4
0.7
L
b1
l1
L
1
0.5
c1
L
P
0.6
0.05
0.45
x
c
b
2
e
1
b2
Pattern of terminal position areas
1.5
0.2
l
1
0.9
A-A Section
Q
Ordering Information
Part Name
Quantity
Shipping Container
φ 178 mm Reel, 8 mm Emboss Taping
φ 178 mm Reel, 8 mm Emboss Taping
2SK1215IGETL
2SK1215IGFTL
3000
3000
Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of
production before ordering the product.
Rev.2.00 Aug 10, 2005 page 5 of 5
Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
Keep safety first in your circuit designs!
1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble
may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage.
Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary
circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap.
Notes regarding these materials
1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's
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diagrams, charts, programs, algorithms, or circuit application examples contained in these materials.
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therefore recommended that customers contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor for the latest product
information before purchasing a product listed herein.
The information described here may contain technical inaccuracies or typographical errors.
Renesas Technology Corp. assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors.
Please also pay attention to information published by Renesas Technology Corp. by various means, including the Renesas Technology Corp. Semiconductor
home page (http://www.renesas.com).
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8. Please contact Renesas Technology Corp. for further details on these materials or the products contained therein.
RENESAS SALES OFFICES
http://www.renesas.com
Refer to "http://www.renesas.com/en/network" for the latest and detailed information.
Renesas Technology America, Inc.
450 Holger Way, San Jose, CA 95134-1368, U.S.A
Tel: <1> (408) 382-7500, Fax: <1> (408) 382-7501
Renesas Technology Europe Limited
Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K.
Tel: <44> (1628) 585-100, Fax: <44> (1628) 585-900
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7th Floor, North Tower, World Finance Centre, Harbour City, 1 Canton Road, Tsimshatsui, Kowloon, Hong Kong
Tel: <852> 2265-6688, Fax: <852> 2730-6071
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10th Floor, No.99, Fushing North Road, Taipei, Taiwan
Tel: <886> (2) 2715-2888, Fax: <886> (2) 2713-2999
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Unit2607 Ruijing Building, No.205 Maoming Road (S), Shanghai 200020, China
Tel: <86> (21) 6472-1001, Fax: <86> (21) 6415-2952
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1 Harbour Front Avenue, #06-10, Keppel Bay Tower, Singapore 098632
Tel: <65> 6213-0200, Fax: <65> 6278-8001
Renesas Technology Korea Co., Ltd.
Kukje Center Bldg. 18th Fl., 191, 2-ka, Hangang-ro, Yongsan-ku, Seoul 140-702, Korea
Tel: <82> 2-796-3115, Fax: <82> 2-796-2145
Renesas Technology Malaysia Sdn. Bhd.
Unit 906, Block B, Menara Amcorp, Amcorp Trade Centre, No.18, Jalan Persiaran Barat, 46050 Petaling Jaya, Selangor Darul Ehsan, Malaysia
Tel: <603> 7955-9390, Fax: <603> 7955-9510
© 2005. Renesas Technology Corp., All rights reserved. Printed in Japan.
Colophon .3.0
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