2SJ130L-E [RENESAS]
Silicon P Channel MOS FET; 硅P沟道MOS场效应晶体管
| 型号： | 2SJ130L-E |
| 厂家： | 
RENESAS TECHNOLOGY CORP |
| 描述： | Silicon P Channel MOS FET |
| 文件： | 总6页 (文件大小：71K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2SJ160, 2SJ161, 2SJ162
Silicon P Channel MOS FET
REJ03G0847-0200
(Previous: ADE-208-1182)
Rev.2.00
Sep 07, 2005
Description
Low frequency power amplifier
Complementary pair with 2SK1056, 2SK1057 and 2SK1058
Features
•
•
•
•
•
•
•
Good frequency characteristic
High speed switching
Wide area of safe operation
Enhancement-mode
Good complementary characteristics
Equipped with gate protection diodes
Suitable for audio power amplifier
Outline
RENESAS Package code: PRSS0004ZE-A
(Package name: TO-3P)
D
1. Gate
2. Source (Flange)
3. Drain
G
1
2
3
S
Rev.2.00 Sep 07, 2005 page 1 of 5
2SJ160, 2SJ161, 2SJ162
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Value
–120
–140
–160
±15
Unit
Drain to source voltage
2SJ160
VDSX
V
2SJ161
2SJ162
Gate to source voltage
Drain current
VGSS
ID
V
A
–7
Body to drain diode reverse drain current
Channel dissipation
IDR
–7
A
Pch Note 1
100
W
°C
°C
Channel temperature
Tch
150
Storage temperature
Tstg
–55 to +150
Note: 1. Value at Tc = 25°C
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
–120
–140
–160
±15
–0.15
—
Typ
—
Max
Unit
V
Test Conditions
Drain to source breakdown
voltage
2SJ160
2SJ161
2SJ162
V (BR) DSX
—
—
ID = –10 mA, VGS = 10 V
—
V
—
—
V
Gate to source breakdown voltage
Gate to source cutoff voltage
Drain to source saturation voltage
Forward transfer admittance
Input capacitance
V (BR) GSS
VGS (off)
VDS (sat)
|yfs|
—
—
V
IG = ±100 µA, VDS = 0
ID = –100 mA, VDS = –10 V
ID = –7 A, VGS = 0 Note 2
ID = –3 A, VDS = –10 V Note 2
VGS = 5 V, VDS = –10 V,
f = 1 MHz
—
–1.45
–12
1.4
—
V
—
V
0.7
1.0
900
400
40
S
Ciss
—
pF
pF
pF
ns
ns
Output capacitance
Coss
Crss
ton
—
—
Reverse transfer capacitance
Turn-on time
—
—
—
230
110
—
VDD = –20 V ID = –4 A
Turn-off time
toff
—
—
Note: 2. Pulse test
Rev.2.00 Sep 07, 2005 page 2 of 5
2SJ160, 2SJ161, 2SJ162
Main Characteristics
Power vs. Temperature Derating
Maximum Safe Operation Area
–20
–10
–5
150
100
50
Ta = 25°C
ID max (Continuous) PW = 10 ms (1 shot)
PW = 100 mhot)
(–14.3 V,
DC Operation (Tc = 25°C)
–7 A)
–2
–1
(–140 V, –0.71 A)
(–160 V, –0.63 A)
(–120 V, –0.83 A)
–0.5
2SJ160
2SJ161
2SJ162
–0.2
0
0
50
100
150
–5 –10 –20
–50 –100 –200 –500
Case Temperature Tc (°C)
Drain to Source Voltage VDS (V)
Typical Output Characteristics
Typical Transfer Characteristics
VDS = –10 V
–1.0
–0.8
–0.6
–0.4
–0.2
0
–10
–8
–6
–4
–2
0
Tc = 25°C
–9
–8
–7
–6
–5
Tc = –25°C
25°C
75°C
–4
–3
–2
–1 V
= 0
V
GS
0
–10
–20
–30
–40
–50
0
–0.4
–0.8
–1.2
–1.6
–2.0
Drain to Source Voltage VDS (V)
Gate to Source Voltage VGS (V)
Drain to Source Saturation Voltage vs.
Drain Current
Drain to Source Voltage vs.
Gate to Source Voltage
–10
–8
–6
–4
–2
0
–10
Pulse Test
75°C
–5
25°C
–2
–1
–5 A
Tc = –25°C
–0.5
–2 A
–0.2
–0.1
ID = –1 A
VGD = 0 V
–5 –10
Drain Current ID (A)
–0.1 –0.2 –0.5 –1 –2
0
–2
–4
–6
–8
–10
Gate to Source Voltage VGS (V)
Rev.2.00 Sep 07, 2005 page 3 of 5
2SJ160, 2SJ161, 2SJ162
Input Capacitance vs.
Gate to Source Voltage
Forward Transfer Admittance vs.
Frequency
3
1
1000
500
0.3
0.1
0.03
0.01
200
100
Tc = 25°C
V
DS = –10 V
D = –2 A
VDS = –10 V
f = 1 MHz
I
0.003
0
2
4
6
8
10
10 k 30 k 100 k 300 k 1 M 3 M 10 M
Gate to Source Voltage V
(V)
Frequency f (Hz)
GS
Switching Time vs. Drain Current
500
t
on
200
100
50
t
off
20
10
5
–0.1 –0.2
–0.5 –1
–2
–5 –10
Drain Current ID (A)
Switching Time Test Circuit
Output
Waveform
10%
RL
Input
Input
90%
t
on
t
off
–20 V
90%
PW = 50 µs
duty ratio = 1%
50 Ω
Output
10%
Rev.2.00 Sep 07, 2005 page 4 of 5
2SJ160, 2SJ161, 2SJ162
Package Dimensions
JEITA Package Code
SC-65
RENESAS Code
Package Name
TO-3P / TO-3PV
MASS[Typ.]
5.0g
PRSS0004ZE-A
Unit: mm
4.8 0.2
15.6 0.3
3.2 0.2
φ
1.5
1.6
2.0
1.4 Max
2.8
1.0 0.2
0.6 0.2
0.9
1.0
3.6
5.45 0.5
5.45 0.5
Ordering Information
Part Name
Quantity
Shipping Container
2SJ160-E
2SJ161-E
2SJ162-E
360 pcs
Box (Tube)
Box (Tube)
Box (Tube)
360 pcs
360 pcs
Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of
production before ordering the product.
Rev.2.00 Sep 07, 2005 page 5 of 5
Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
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Colophon .3.0
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