2SJ132-Z [NEC]
Power Field-Effect Transistor, 2A I(D), 30V, 0.4ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET;
| 型号： | 2SJ132-Z |
| 厂家： | 
NEC |
| 描述： | Power Field-Effect Transistor, 2A I(D), 30V, 0.4ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET 开关 脉冲 晶体管 |
| 文件： | 总6页 (文件大小：130K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
MOS FIELD EFFECT POWER TRANSISTORS
2SJ132, 2SJ132-Z
P-CHANNEL POWER MOS FET
FOR SWITCHING
FEATURES
PACKAGE DRAWING (UNIT: mm)
• Gate drive available at logic level (VGS = −4 V)
• High current control available in small
dimension due to low RDS(on) (≅ 0.25 Ω)
• 2SJ132-Z is a lead process product and is deal
for mounting a hybrid IC.
QUALITY GRADES
• Standard
Please refer to “Quality Grades on NEC
Semiconductor Devices” (Document No.
C11531E) published by NEC Corporation to
know the specification of quality grade on the
devices and its recommended applications.
Electrode connection
<1> Gate
<2> Drain
<3> Source
<4> Fin (drain)
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
INTERNAL
EQUIVALENT CIRCUIT
Parameter
Drain to source voltage
Gate to source voltage
Drain current (DC)
Symbol
VDSS
Conditions
Ratings
Unit
V
−30
VGS = 0
VDS = 0
–
VGSS
V
20
+
–
TC = 25°C
ID(DC)
A
2.0
+
–
+
PW ≤ 300 µs
Drain current (pulse)
ID(pulse)
A
8.0
duty cycle ≤ 10 %
TC = 25°C
Ta = 25°C
Total power dissipation
Total power dissipation
Channel temperature
PT
PT
20
W
W
1.0*, 2.0**
150
°C
°C
Tch
Tstg
−55 to +150
Storage temperature
* Printing board mounted
** 7.5 cm2 × 0.7 mm ceramic board mounted
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D16192EJ2V0DS00 (2nd edition)
Date Published April 2002 N CP(K)
Printed in Japan
2002
©
2SJ132, 2SJ132-Z
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
Parameter
Drain cutoff current
Gate cutoff current
Gate cutoff voltage
Symbol
IDSS
Conditions
VDS = −30 V, VGS = 0
MIN.
TYP.
MAX.
Unit
µA
nA
V
−10
–
–
VGS = 20 V, VDS = 0
+
100
+
IGSS
VDS = −10 V, ID = −1.0 mA
VDS = −10 V, ID = −1.0 A
−1.0
−2.0
−3.0
VGS(off)
yts
Forward transfer
admittance
1.0
1.8
S
VGS = −10 V, ID = −1.0 A
VGS = −4 V, ID = −0.8 A
Ω
Ω
Drain to source on-state
resistance
RDS(on)1
0.25
0.4
0.4
0.6
Drain to source on-state
resistance
RDS(on)2
VDS = −10 V, VGS = 0 V
f = 1 MHz
Input capacitance
Output capacitance
Ciss
Coss
Crss
730
180
45
pF
pF
pF
Reverse transfer
capacitance
ID = −1.0 A, VGS(on) = −10 V
VDD ≅ −15 V, RL = 50 Ω,
Rin = 10 Ω
Turn-on delay time
Rise time
td(on)
tt
td(off)
tf
30
30
ns
ns
ns
ns
Turn-off delay time
Fall time
110
40
SWITCHING TIME TEST CIRCUIT, TEST CONDITION (RESISTANCE LOAD)
2
Data Sheet D16192EJ2V0DS
2SJ132, 2SJ132-Z
TYPICAL CHARACTERISTICS (Ta = 25°C)
3
Data Sheet D16192EJ2V0DS
2SJ132, 2SJ132-Z
4
Data Sheet D16192EJ2V0DS
2SJ132, 2SJ132-Z
5
Data Sheet D16192EJ2V0DS
2SJ132, 2SJ132-Z
•
The information in this document is current as of July, 2001. The information is subject to change
without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data
books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products
and/or types are available in every country. Please check with an NEC sales representative for
availability and additional information.
•
•
No part of this document may be copied or reproduced in any form or by any means without prior
written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document.
NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of
third parties by or arising from the use of NEC semiconductor products listed in this document or any other
liability arising from the use of such products. No license, express, implied or otherwise, is granted under any
patents, copyrights or other intellectual property rights of NEC or others.
•
•
•
Descriptions of circuits, software and other related information in this document are provided for illustrative
purposes in semiconductor product operation and application examples. The incorporation of these
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responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third
parties arising from the use of these circuits, software and information.
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agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize
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semiconductor products, customers must incorporate sufficient safety measures in their design, such as
redundancy, fire-containment, and anti-failure features.
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"Standard", "Special" and "Specific". The "Specific" quality grade applies only to semiconductor products
developed based on a customer-designated "quality assurance program" for a specific application. The
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Customers must check the quality grade of each semiconductor product before using it in a particular
application.
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"Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
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The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's
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(Note)
(1) "NEC" as used in this statement means NEC Corporation and also includes its majority-owned subsidiaries.
(2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for
NEC (as defined above).
M8E 00. 4
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