2SD1126 [RENESAS]
Silicon NPN Triple Diffused; 硅NPN三重扩散
| 型号： | 2SD1126 |
| 厂家： | 
RENESAS TECHNOLOGY CORP |
| 描述： | Silicon NPN Triple Diffused |
| 文件： | 总7页 (文件大小：143K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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2SD1126(K)
Silicon NPN Triple Diffused
ADE-208-904 (Z)
1st. Edition
September 2000
Application
Power switching
Outline
TO-220AB
2
1
1. Base
ID
2. Collector
(Flange)
3. Emitter
1
1.5 kΩ
(Typ)
130 Ω
(Typ)
2
3
3
2SD1126(K)
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
VCBO
VCEO
VEBO
IC
Ratings
Unit
V
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
120
120
V
7
V
10
A
Collector peak current
Collector power dissipation
Junction temperature
Storage temperature
C to E diode forward current
Note: 1. Value at TC = 25°C.
IC(peak)
PC*1
Tj
15
A
50
W
°C
°C
A
150
Tstg
ID
–55 to +150
10
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Typ
Max
Unit
Test conditions
Collector to emitter breakdown V(BR)CEO
voltage
120
—
—
V
IC = 25 mA, RBE = ∞
Emitter to base breakdown
voltage
V(BR)EBO
7
—
—
V
IE = 200 mA, IC = 0
Collector cutoff current
ICBO
ICEO
hFE
—
—
—
—
—
—
—
—
—
0.8
8.0
100
10
µA
µA
VCB = 120 V, IE = 0
VCE = 100 V, RBE = ∞
VCE = 3 V, IC = 5 A*1
IC = 5 A, IB = 10 mA*1
IC = 10 A, IB = 0.1 A*1
IC = 5 A, IB = 10 mA*1
IC = 10 A, IB = 0.1 A*1
ID = 10 A*1
—
DC current transfer ratio
1000
—
2000
1.5
3.0
2.0
3.5
3.0
—
Collector to emitter saturation VCE(sat)1
V
voltage
VCE(sat)2
VBE(sat)1
VBE(sat)2
VD
—
V
Base to emitter saturation
voltage
—
V
—
V
C to E diode forward voltage
Turn on time
—
V
ton
—
µs
µs
IC = 5 A, IB1 = –IB2 = 10 mA
Turn off time
toff
—
—
Note: 1. Pulse test.
2SD1126(K)
Maximum Collector Dissipation Curve
Area of Safe Operation
60
40
20
30
10
iC (peak)
IC (max)
3
1.0
0.3
0.1
TC = 25°C
0.03
3
10
30
100
300
0
50
100
150
Collector to emitter voltage VCE (V)
Case temperature TC (°C)
DC Current Transfer Ratio
vs. Collector Current
Typical Output Characteristics
30,000
10,000
10
VCE = 3 V
Pulse
TC = 25°C
8
6
4
2
3,000
1,000
0.6
0.5 mA
300
100
IB = 0
30
0.3
0
1
2
3
4
5
1.0
3
10
30
Collector to emitter voltage VCE (V)
Collector current IC (A)
2SD1126(K)
Saturation Voltage vs. Collector Current
10
3
VBE (sat)
1.0
500
VCE (sat)
200
0.3
0.1
lC/lB = 100
0.03
0.01
TC = 25°C
Pulse
0.3
1.0
3
10
30
Collector current IC (A)
2SD1126(K)
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