2SD1127 [ISC]
Silicon NPN Darlington Power Transistor; 硅NPN达林顿功率晶体管
| 型号： | 2SD1127 |
| 厂家： | 
INCHANGE SEMICONDUCTOR COMPANY LIMITED |
| 描述： | Silicon NPN Darlington Power Transistor |
| 文件： | 总2页 (文件大小：223K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Darlington Power Transistor
2SD1127
DESCRIPTION
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 120V(Min)
·High DC Current Gain
: hFE= 1000(Min) @IC= 10A
·Low Saturation Voltage
APPLICATIONS
·Designed for power switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
VCBO
VCEO
VEBO
IC
PARAMETER
Collector-Base Voltage
Collector-Emter Voltage
Emitter-Base Voltage
VALUE
120
120
7
UNIT
V
V
V
Collector Current-Continuous
Collector Current-Peak
10
A
ICP
15
A
Collector Power Dissipation
@ TC=25℃
PC
50
W
℃
℃
TJ
Junction Temperature
150
-55~150
Storage Temperature Range
Tstg
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Darlington Power Transistor
2SD1127
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
VCEO(SUS)
V(BR)EBO
VCE(
PARAMETER
CONDITIONS
IC= 200mA; RBE= ∞
IE= 200mA; IC= 0
MIN
120
7
TYP.
MAX
UNIT
V
Collector-Emitter Sustaining Voltage
Emitter-Base Breakdown Voltage
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Collector Cutoff Current
V
IC= 10A; IB= 25mA
IC= 10A; IB= 25mA
VCB= 120V; IE=0
1.5
2.0
100
V
)
sat
V
VBE(
)
sat
ICBO
μA
hFE
DC Current Gain
IC= 10A; VCE= 2V
1000
Switching times
Turn-On Time
0.8
8.0
μs
μs
ton
IC= 5A, IB1= -IB2= 10mA
Turn-Off Time
toff
2
isc Website：www.iscsemi.cn
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