2SD1126(K) [ETC]
TRANSISTOR | BJT | DARLINGTON | NPN | 120V V(BR)CEO | 10A I(C) | TO-220AB ; 晶体管| BJT |达林顿| NPN | 120V V( BR ) CEO | 10A I(C ) | TO- 220AB\n型号: | 2SD1126(K) |
厂家: | ETC |
描述: | TRANSISTOR | BJT | DARLINGTON | NPN | 120V V(BR)CEO | 10A I(C) | TO-220AB
|
文件: | 总6页 (文件大小:32K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
2SD1126(K)
Silicon NPN Triple Diffused
ADE-208-904 (Z)
1st. Edition
Sep. 2000
Application
Power switching
Outline
TO-220AB
2
1
1. Base
ID
2. Collector
(Flange)
3. Emitter
1
1.5 kΩ
(Typ)
130 Ω
(Typ)
2
3
3
2SD1126(K)
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
VCBO
VCEO
VEBO
IC
Ratings
Unit
V
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
120
120
V
7
V
10
A
Collector peak current
Collector power dissipation
Junction temperature
Storage temperature
C to E diode forward current
Note: 1. Value at TC = 25°C.
IC(peak)
PC*1
Tj
15
A
50
W
°C
°C
A
150
Tstg
ID
–55 to +150
10
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Typ
Max
Unit
Test conditions
Collector to emitter breakdown V(BR)CEO
voltage
120
—
—
V
IC = 25 mA, RBE = ∞
Emitter to base breakdown
voltage
V(BR)EBO
7
—
—
V
IE = 200 mA, IC = 0
Collector cutoff current
ICBO
ICEO
hFE
—
—
—
—
—
—
—
—
—
0.8
8.0
100
10
µA
µA
VCB = 120 V, IE = 0
VCE = 100 V, RBE = ∞
VCE = 3 V, IC = 5 A*1
IC = 5 A, IB = 10 mA*1
IC = 10 A, IB = 0.1 A*1
IC = 5 A, IB = 10 mA*1
IC = 10 A, IB = 0.1 A*1
ID = 10 A*1
—
DC current transfer ratio
1000
—
2000
1.5
3.0
2.0
3.5
3.0
—
Collector to emitter saturation VCE(sat)1
V
voltage
VCE(sat)2
VBE(sat)1
VBE(sat)2
VD
—
V
Base to emitter saturation
voltage
—
V
—
V
C to E diode forward voltage
Turn on time
—
V
ton
—
µs
µs
IC = 5 A, IB1 = –IB2 = 10 mA
Turn off time
toff
—
—
Note: 1. Pulse test.
2
2SD1126(K)
Maximum Collector Dissipation Curve
Area of Safe Operation
60
40
20
30
10
iC (peak)
IC (max)
3
1.0
0.3
0.1
TC = 25°C
0.03
3
10
30
100
300
0
50
100
150
Collector to emitter voltage VCE (V)
Case temperature TC (°C)
DC Current Transfer Ratio
vs. Collector Current
Typical Output Characteristics
30,000
10,000
10
VCE = 3 V
Pulse
TC = 25°C
8
6
4
2
3,000
1,000
0.6
0.5 mA
300
100
IB = 0
30
0.3
0
1
2
3
4
5
1.0
3
10
30
Collector to emitter voltage VCE (V)
Collector current IC (A)
3
2SD1126(K)
Saturation Voltage vs. Collector Current
10
3
VBE (sat)
1.0
500
VCE (sat)
200
0.3
0.1
lC/lB = 100
0.03
0.01
TC = 25°C
Pulse
0.3
1.0
3
10
30
Collector current IC (A)
4
2SD1126(K)
Package Dimensions
Unit: mm
11.5 MAX
10.16 ± 0.2
4.44 ± 0.2
9.5
8.0
+0.1
-0.08
1.26 ± 0.15
φ 3.6
2.7 MAX
1.5 MAX
0.76 ± 0.1
2.54 ± 0.5
0.5 ± 0.1
2.54 ± 0.5
Hitachi Code
JEDEC
EIAJ
TO-220AB
Conforms
Conforms
1.8 g
Mass (reference value)
5
2SD1126(K)
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-
safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor
products.
Hitachi, Ltd.
Semiconductor & Integrated Circuits.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109
URL
NorthAmerica
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Asia
: http://semiconductor.hitachi.com/
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Japan
: http://www.hitachi.co.jp/Sicd/indx.htm
For further information write to:
Hitachi Semiconductor
(America) Inc.
179 East Tasman Drive, Dornacher Straβe 3
Hitachi Europe GmbH
Electronic Components Group
Hitachi Asia Ltd.
Hitachi Tower
16 Collyer Quay #20-00,
Singapore 049318
Hitachi Asia (Hong Kong) Ltd.
Group III (Electronic Components)
7/F., North Tower,
San Jose,CA 95134
D-85622 Feldkirchen, Munich
World Finance Centre,
Tel: <1> (408) 433-1990 Germany
Fax: <1>(408) 433-0223 Tel: <49> (89) 9 9180-0
Fax: <49> (89) 9 29 30 00
Tel : <65>-538-6533/538-8577
Fax : <65>-538-6933/538-3877
URL : http://www.hitachi.com.sg
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Hong Kong
Tel : <852>-(2)-735-9218
Fax : <852>-(2)-730-0281
URL : http://www.hitachi.com.hk
Hitachi Europe Ltd.
Electronic Components Group.
Whitebrook Park
Lower Cookham Road
Maidenhead
Hitachi Asia Ltd.
(Taipei Branch Office)
4/F, No. 167, Tun Hwa North Road,
Hung-Kuo Building,
Taipei (105), Taiwan
Berkshire SL6 8YA, United Kingdom
Tel: <44> (1628) 585000
Fax: <44> (1628) 585160
Tel : <886>-(2)-2718-3666
Fax : <886>-(2)-2718-8180
Telex : 23222 HAS-TP
URL : http://www.hitachi.com.tw
Copyright Hitachi, Ltd., 2000. All rights reserved. Printed in Japan.
Colophon 2.0
6
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