2SD1126(K) [ETC]

TRANSISTOR | BJT | DARLINGTON | NPN | 120V V(BR)CEO | 10A I(C) | TO-220AB ; 晶体管| BJT |达林顿| NPN | 120V V( BR ) CEO | 10A I(C ) | TO- 220AB\n
2SD1126(K)
型号: 2SD1126(K)
厂家: ETC    ETC
描述:

TRANSISTOR | BJT | DARLINGTON | NPN | 120V V(BR)CEO | 10A I(C) | TO-220AB
晶体管| BJT |达林顿| NPN | 120V V( BR ) CEO | 10A I(C ) | TO- 220AB\n

晶体 晶体管
文件: 总6页 (文件大小:32K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
2SD1126(K)  
Silicon NPN Triple Diffused  
ADE-208-904 (Z)  
1st. Edition  
Sep. 2000  
Application  
Power switching  
Outline  
TO-220AB  
2
1
1. Base  
ID  
2. Collector  
(Flange)  
3. Emitter  
1
1.5 kΩ  
(Typ)  
130 Ω  
(Typ)  
2
3
3
2SD1126(K)  
Absolute Maximum Ratings (Ta = 25°C)  
Item  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Ratings  
Unit  
V
Collector to base voltage  
Collector to emitter voltage  
Emitter to base voltage  
Collector current  
120  
120  
V
7
V
10  
A
Collector peak current  
Collector power dissipation  
Junction temperature  
Storage temperature  
C to E diode forward current  
Note: 1. Value at TC = 25°C.  
IC(peak)  
PC*1  
Tj  
15  
A
50  
W
°C  
°C  
A
150  
Tstg  
ID  
–55 to +150  
10  
Electrical Characteristics (Ta = 25°C)  
Item  
Symbol Min  
Typ  
Max  
Unit  
Test conditions  
Collector to emitter breakdown V(BR)CEO  
voltage  
120  
V
IC = 25 mA, RBE = ∞  
Emitter to base breakdown  
voltage  
V(BR)EBO  
7
V
IE = 200 mA, IC = 0  
Collector cutoff current  
ICBO  
ICEO  
hFE  
0.8  
8.0  
100  
10  
µA  
µA  
VCB = 120 V, IE = 0  
VCE = 100 V, RBE = ∞  
VCE = 3 V, IC = 5 A*1  
IC = 5 A, IB = 10 mA*1  
IC = 10 A, IB = 0.1 A*1  
IC = 5 A, IB = 10 mA*1  
IC = 10 A, IB = 0.1 A*1  
ID = 10 A*1  
DC current transfer ratio  
1000  
2000  
1.5  
3.0  
2.0  
3.5  
3.0  
Collector to emitter saturation VCE(sat)1  
V
voltage  
VCE(sat)2  
VBE(sat)1  
VBE(sat)2  
VD  
V
Base to emitter saturation  
voltage  
V
V
C to E diode forward voltage  
Turn on time  
V
ton  
µs  
µs  
IC = 5 A, IB1 = –IB2 = 10 mA  
Turn off time  
toff  
Note: 1. Pulse test.  
2
2SD1126(K)  
Maximum Collector Dissipation Curve  
Area of Safe Operation  
60  
40  
20  
30  
10  
iC (peak)  
IC (max)  
3
1.0  
0.3  
0.1  
TC = 25°C  
0.03  
3
10  
30  
100  
300  
0
50  
100  
150  
Collector to emitter voltage VCE (V)  
Case temperature TC (°C)  
DC Current Transfer Ratio  
vs. Collector Current  
Typical Output Characteristics  
30,000  
10,000  
10  
VCE = 3 V  
Pulse  
TC = 25°C  
8
6
4
2
3,000  
1,000  
0.6  
0.5 mA  
300  
100  
IB = 0  
30  
0.3  
0
1
2
3
4
5
1.0  
3
10  
30  
Collector to emitter voltage VCE (V)  
Collector current IC (A)  
3
2SD1126(K)  
Saturation Voltage vs. Collector Current  
10  
3
VBE (sat)  
1.0  
500  
VCE (sat)  
200  
0.3  
0.1  
lC/lB = 100  
0.03  
0.01  
TC = 25°C  
Pulse  
0.3  
1.0  
3
10  
30  
Collector current IC (A)  
4
2SD1126(K)  
Package Dimensions  
Unit: mm  
11.5 MAX  
10.16 ± 0.2  
4.44 ± 0.2  
9.5  
8.0  
+0.1  
-0.08  
1.26 ± 0.15  
φ 3.6  
2.7 MAX  
1.5 MAX  
0.76 ± 0.1  
2.54 ± 0.5  
0.5 ± 0.1  
2.54 ± 0.5  
Hitachi Code  
JEDEC  
EIAJ  
TO-220AB  
Conforms  
Conforms  
1.8 g  
Mass (reference value)  
5
2SD1126(K)  
Cautions  
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,  
copyright, trademark, or other intellectual property rights for information contained in this document.  
Hitachi bears no responsibility for problems that may arise with third party’s rights, including  
intellectual property rights, in connection with use of the information contained in this document.  
2. Products and product specifications may be subject to change without notice. Confirm that you have  
received the latest product standards or specifications before final design, purchase or use.  
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,  
contact Hitachi’s sales office before using the product in an application that demands especially high  
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk  
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,  
traffic, safety equipment or medical equipment for life support.  
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly  
for maximum rating, operating supply voltage range, heat radiation characteristics, installation  
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used  
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable  
failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-  
safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other  
consequential damage due to operation of the Hitachi product.  
5. This product is not designed to be radiation resistant.  
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without  
written approval from Hitachi.  
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor  
products.  
Hitachi, Ltd.  
Semiconductor & Integrated Circuits.  
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan  
Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109  
URL  
NorthAmerica  
Europe  
Asia  
: http://semiconductor.hitachi.com/  
: http://www.hitachi-eu.com/hel/ecg  
: http://sicapac.hitachi-asia.com  
Japan  
: http://www.hitachi.co.jp/Sicd/indx.htm  
For further information write to:  
Hitachi Semiconductor  
(America) Inc.  
179 East Tasman Drive, Dornacher Straβe 3  
Hitachi Europe GmbH  
Electronic Components Group  
Hitachi Asia Ltd.  
Hitachi Tower  
16 Collyer Quay #20-00,  
Singapore 049318  
Hitachi Asia (Hong Kong) Ltd.  
Group III (Electronic Components)  
7/F., North Tower,  
San Jose,CA 95134  
D-85622 Feldkirchen, Munich  
World Finance Centre,  
Tel: <1> (408) 433-1990 Germany  
Fax: <1>(408) 433-0223 Tel: <49> (89) 9 9180-0  
Fax: <49> (89) 9 29 30 00  
Tel : <65>-538-6533/538-8577  
Fax : <65>-538-6933/538-3877  
URL : http://www.hitachi.com.sg  
Harbour City, Canton Road  
Tsim Sha Tsui, Kowloon,  
Hong Kong  
Tel : <852>-(2)-735-9218  
Fax : <852>-(2)-730-0281  
URL : http://www.hitachi.com.hk  
Hitachi Europe Ltd.  
Electronic Components Group.  
Whitebrook Park  
Lower Cookham Road  
Maidenhead  
Hitachi Asia Ltd.  
(Taipei Branch Office)  
4/F, No. 167, Tun Hwa North Road,  
Hung-Kuo Building,  
Taipei (105), Taiwan  
Berkshire SL6 8YA, United Kingdom  
Tel: <44> (1628) 585000  
Fax: <44> (1628) 585160  
Tel : <886>-(2)-2718-3666  
Fax : <886>-(2)-2718-8180  
Telex : 23222 HAS-TP  
URL : http://www.hitachi.com.tw  
Copyright Hitachi, Ltd., 2000. All rights reserved. Printed in Japan.  
Colophon 2.0  
6

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