FS7UM-18A [POWEREX]
Nch POWER MOSFET HIGH-SPEED SWITCHING USE; N沟道功率MOSFET的高速开关使用
| 型号： | FS7UM-18A |
| 厂家： | 
POWEREX POWER SEMICONDUCTORS |
| 描述： | Nch POWER MOSFET HIGH-SPEED SWITCHING USE |
| 文件： | 总4页 (文件大小：48K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MITSUBISHI Nch POWER MOSFET
FS7UM-18A
HIGH-SPEED SWITCHING USE
FS7UM-18A
OUTLINE DRAWING
Dimensions in mm
4.5
1.3
10.5MAX.
r
φ 3.6
1.0
0.8
2.54
2.54
0.5
2.6
q
w e
w r
q GATE
w DRAIN
e SOURCE
r DRAIN
q
¡VDSS ............................................................................... 900V
¡rDS (ON) (MAX) ................................................................ 2.0Ω
¡ID ........................................................................................... 7A
e
TO-220
APPLICATION
SMPS, DC-DC Converter, battery charger, power
supply of printer, copier, HDD, FDD, TV, VCR, per-
sonal computer etc.
MAXIMUM RATINGS (Tc = 25°C)
Symbol
VDSS
VGSS
ID
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Conditions
Ratings
Unit
VGS = 0V
VDS = 0V
900
V
V
±30
7
A
IDM
Drain current (Pulsed)
Maximum power dissipation
Channel temperature
Storage temperature
Weight
21
150
A
PD
W
°C
°C
g
Tch
–55 ~ +150
–55 ~ +150
2
Tstg
—
Typical value
Feb.1999
MITSUBISHI Nch POWER MOSFET
FS7UM-18A
HIGH-SPEED SWITCHING USE
ELECTRICAL CHARACTERISTICS (Tch = 25°C)
Symbol Parameter
Limits
Unit
Test conditions
Min.
900
±30
—
Typ.
—
Max.
—
V
V
(BR) DSS Drain-source breakdown voltage ID = 1mA, VGS = 0V
(BR) GSS Gate-source breakdown voltage IGS = ±100µA, VDS = 0V
VGS = ±25V, VDS = 0V
Drain-source leakage current VDS = 900V, VGS = 0V
Gate-source threshold voltage ID = 1mA, VDS = 10V
V
V
—
—
IGSS
IDSS
Gate-source leakage current
—
±10
1
µA
mA
V
—
—
VGS (th)
rDS (ON)
VDS (ON)
yfs
2
3
4
Drain-source on-state resistance ID = 3A, VGS = 10V
Drain-source on-state voltage ID = 3A, VGS = 10V
—
1.54
4.62
7.0
1380
140
28
2.00
6.00
—
Ω
—
V
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
ID = 3A, VDS = 10V
4.2
—
S
Ciss
—
pF
pF
pF
ns
ns
ns
ns
V
Coss
Crss
VDS = 25V, VGS = 0V, f = 1MHz
—
—
—
—
td (on)
tr
—
25
—
VDD = 200V, ID = 3A, VGS = 10V,
—
28
—
td (off)
tf
Turn-off delay time
Fall time
RGEN = RGS = 50Ω
—
185
46
—
—
—
VSD
Source-drain voltage
Thermal resistance
IS = 3A, VGS = 0V
Channel to case
—
1.0
—
1.5
0.83
Rth (ch-c)
—
°C/W
PERFORMANCE CURVES
POWER DISSIPATION DERATING CURVE
MAXIMUM SAFE OPERATING AREA
200
160
120
80
3
2
tw = 10ms
101
7
5
3
2
100ms
1ms
100
7
5
10ms
3
2
100ms
DC
TC = 25°C
40
10–1
7
Single Pulse
5
0
3
0
50
100
150
200
3
5 7101 2 3 5 7102 2 3 5 7103 2 3
DRAIN-SOURCE VOLTAGE VDS (V)
CASE TEMPERATURE TC (°C)
OUTPUT CHARACTERISTICS
(TYPICAL)
OUTPUT CHARACTERISTICS
(TYPICAL)
VGS = 20V
20
16
12
8
5
4
3
2
1
0
10V
5V
TC = 25°C
Pulse Test
TC = 25°C
Pulse Test
4.5V
VGS = 20V
10V
5V
4V
PD = 150W
4V
4
3.5V
0
0
10
20
30
40
50
0
4
8
12
16
20
DRAIN-SOURCE VOLTAGE VDS (V)
DRAIN-SOURCE VOLTAGE VDS (V)
Feb.1999
MITSUBISHI Nch POWER MOSFET
FS7UM-18A
HIGH-SPEED SWITCHING USE
ON-STATE VOLTAGE VS.
GATE-SOURCE VOLTAGE
(TYPICAL)
ON-STATE RESISTANCE VS.
DRAIN CURRENT
(TYPICAL)
50
40
30
20
10
0
5.0
4.0
3.0
2.0
1.0
0
T
C
= 25°C
T
C
= 25°C
Pulse Test
Pulse Test
I
D
= 14A
V
GS = 10V
20V
7A
3A
0
4
8
12
16
20
20
2
10–1 2 3 5 7100 2 3 5 7101 2 3 5 7102
GATE-SOURCE VOLTAGE
V
GS (V)
DRAIN CURRENT (A)
ID
FORWARD TRANSFER ADMITTANCE
VS.DRAIN CURRENT
(TYPICAL)
TRANSFER CHARACTERISTICS
(TYPICAL)
20
16
12
8
101
7
5
T
V
C
= 25°C
DS = 50V
Pulse Test
V
DS = 10V
T
C
= 25°C
75°C
Pulse Test
3
2
125°C
100
7
5
3
2
4
0
10–1
0
4
8
12
16
GS (V)
10–1
2
3
5
7 100
2
3
5
7 101
GATE-SOURCE VOLTAGE
V
DRAIN CURRENT ID (A)
CAPACITANCE VS.
DRAIN-SOURCE VOLTAGE
(TYPICAL)
SWITCHING CHARACTERISTICS
(TYPICAL)
104
7
103
7
5
Tch = 25°C
DD = 200V
GS = 10V
5
3
2
V
V
R
GEN = RGS = 50Ω
Ciss
3
2
103
7
td(off)
5
3
2
102
7
5
t
t
f
Coss
Crss
102
7
r
3
2
5
3
2
Tch = 25°C
t
d(on)
f = 1MH
Z
V
GS = 0V
101
101
2 3 5 7100 2 3 5 7101 2 3 5 7102
10–1
2
3
5
7 100
2
3
5
7 101
DRAIN-SOURCE VOLTAGE DS (V)
V
DRAIN CURRENT
ID (A)
Feb.1999
MITSUBISHI Nch POWER MOSFET
FS7UM-18A
HIGH-SPEED SWITCHING USE
GATE-SOURCE VOLTAGE
VS.GATE CHARGE
(TYPICAL)
SOURCE-DRAIN DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
20
16
12
8
20
16
12
8
Tch = 25°C
= 7A
V
GS = 0V
I
D
Pulse Test
TC = 125°C
V
DS = 250V
400V
600V
75°C
25°C
4
4
0
0
0
20
40
60
80
(nC)
100
0
0.8
1.6
2.4
3.2
4.0
GATE CHARGE
Qg
SOURCE-DRAIN VOLTAGE V
SD (V)
ON-STATE RESISTANCE VS.
CHANNEL TEMPERATURE
(TYPICAL)
THRESHOLD VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
101
7
5
5.0
4.0
3.0
2.0
1.0
0
V
DS = 10V
V
GS = 10V
= 1/2I
Pulse Test
I
D = 1mA
I
D
D
3
2
100
7
5
3
2
10–1
–50
0
50
100
150
–50
0
50
100
150
CHANNEL TEMPERATURE Tch (°C)
CHANNEL TEMPERATURE Tch (°C)
BREAKDOWN VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTICS
1.4
1.2
1.0
0.8
0.6
0.4
101
7
VGS = 0V
I
D = 1mA
5
3
2
D = 1.0
100
7
0.5
5
3
2
0.2
0.1
10–1
7
0.05
0.02
0.01
Single Pulse
5
3
2
10–2
–50
0
50
100
150
10–423 5710–323 5710–223 5710–123 57100 23 57101 23 57102
PULSE WIDTH (s)
CHANNEL TEMPERATURE Tch (°C)
tw
Feb.1999
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