FS7VS-12 [RENESAS]
MITSUBISHI Nch POWER MOSFET; 三菱N沟道功率MOSFET
| 型号： | FS7VS-12 |
| 厂家： | 
RENESAS TECHNOLOGY CORP |
| 描述： | MITSUBISHI Nch POWER MOSFET |
| 文件： | 总5页 (文件大小：82K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
To all our customers
Regarding the change of names mentioned in the document, such as Mitsubishi
Electric and Mitsubishi XX, to Renesas Technology Corp.
The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas
Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.)
Accordingly, although Mitsubishi Electric, Mitsubishi Electric Corporation, Mitsubishi
Semiconductors, and other Mitsubishi brand names are mentioned in the document, these names
have in fact all been changed to Renesas Technology Corp. Thank you for your understanding.
Except for our corporate trademark, logo and corporate statement, no changes whatsoever have been
made to the contents of the document, and these changes do not constitute any alteration to the
contents of the document itself.
Note : Mitsubishi Electric will continue the business operations of high frequency & optical devices
and power devices.
Renesas Technology Corp.
Customer Support Dept.
April 1, 2003
MITSUBISHI Nch POWER MOSFET
FS7VS-12
HIGH-SPEED SWITCHING USE
FS7VS-12
OUTLINE DRAWING
Dimensions in mm
r
10.5MAX.
4.5
1.3
+0.3
–0
0
1
5
0.5
0.8
q
w e
w r
q GATE
w DRAIN
e SOURCE
r DRAIN
q
¡VDSS ................................................................................ 600V
¡rDS (ON) (MAX) ................................................................. 1.3Ω
¡ID ............................................................................................ 7A
e
TO-220S
APPLICATION
SMPS, DC-DC Converter, battery charger, power
supply of printer, copier, HDD, FDD, TV, VCR, per-
sonal computer etc.
MAXIMUM RATINGS (Tc = 25°C)
Symbol
VDSS
VGSS
ID
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Conditions
Ratings
Unit
V
VGS = 0V
VDS = 0V
600
±30
V
7
21
A
IDM
Drain current (Pulsed)
Maximum power dissipation
Channel temperature
Storage temperature
Weight
A
PD
125
W
°C
°C
g
Tch
–55 ~ +150
–55 ~ +150
1.2
Tstg
—
Typical value
Feb.1999
MITSUBISHI Nch POWER MOSFET
FS7VS-12
HIGH-SPEED SWITCHING USE
ELECTRICAL CHARACTERISTICS (Tch = 25°C)
Symbol Parameter
Limits
Unit
Test conditions
Min.
600
±30
—
Typ.
—
Max.
—
ID = 1mA, VGS = 0V
V
V
(BR) DSS Drain-source breakdown voltage
(BR) GSS Gate-source breakdown voltage
V
V
IG = ±100µA, VDS = 0V
VGS = ±25V, VDS = 0V
VDS = 600V, VGS = 0V
ID = 1mA, VDS = 10V
ID = 3A, VGS = 10V
ID = 3A, VGS = 10V
ID = 3A, VDS = 10V
—
—
IGSS
IDSS
Gate-source leakage current
Drain-source leakage current
Gate-source threshold voltage
Drain-source on-state resistance
Drain-source on-state voltage
Forward transfer admittance
Input capacitance
—
±10
1
µA
mA
V
—
—
VGS (th)
rDS (ON)
VDS (ON)
yfs
2
3
4
—
1.0
3.0
5.0
1100
125
17
1.3
3.9
—
Ω
—
V
3.0
—
S
Ciss
—
pF
pF
pF
ns
ns
ns
ns
V
VDS = 25V, VGS = 0V, f = 1MHz
Coss
Crss
Output capacitance
—
—
Reverse transfer capacitance
Turn-on delay time
—
—
td (on)
tr
—
30
—
Rise time
—
30
—
VDD = 200V, ID = 3A, VGS = 10V, RGEN = RGS = 50Ω
td (off)
tf
Turn-off delay time
—
100
35
—
Fall time
—
—
IS = 3A, VGS = 0V
Channel to case
VSD
Source-drain voltage
Thermal resistance
—
1.5
—
2.0
1.0
Rth (ch-c)
—
°C/W
PERFORMANCE CURVES
POWER DISSIPATION DERATING CURVE
MAXIMUM SAFE OPERATING AREA
200
160
120
80
5
3
2
tw=10µs
101
7
100µs
1ms
5
3
2
100
7
10ms
DC
5
3
T
C
= 25°C
2
40
Single Pulse
10–1
7
5
0
0
50
100
150
200
2 3 5 7 101 2 3 5 7 102 2 3 5 7 103
DRAIN-SOURCE VOLTAGE DS (V)
2
CASE TEMPERATURE
TC
(°C)
V
OUTPUT CHARACTERISTICS
(TYPICAL)
OUTPUT CHARACTERISTICS
(TYPICAL)
V
GS = 20V
20
16
12
8
10
8
10V
V
GS=20V
6V
PD = 125W
8V
10V
8V
TC = 25°C
Pulse Test
PD
= 125W
6
6V
4
5V
4
2
5V
T
C = 25°C
Pulse Test
0
0
0
10
20
30
40
50
0
4
8
12
16
20
DRAIN-SOURCE VOLTAGE
VDS (V)
DRAIN-SOURCE VOLTAGE VDS (V)
Feb.1999
MITSUBISHI Nch POWER MOSFET
FS7VS-12
HIGH-SPEED SWITCHING USE
ON-STATE VOLTAGE VS.
GATE-SOURCE VOLTAGE
(TYPICAL)
ON-STATE RESISTANCE VS.
DRAIN CURRENT
(TYPICAL)
2.0
1.6
1.2
0.8
40
32
24
16
8
VGS = 10V
T
C
= 25°C
T
C
= 25°C
20V
Pulse Test
Pulse Test
ID
= 14A
10A
7A
0.4
0
3A
0
0
4
8
12
16
20
10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102
GATE-SOURCE VOLTAGE
VGS (V)
DRAIN CURRENT ID (A)
FORWARD TRANSFER ADMITTANCE
VS.DRAIN CURRENT
(TYPICAL)
TRANSFER CHARACTERISTICS
(TYPICAL)
20
16
12
8
101
7
5
TC
= 25°C
V
DS = 10V
TC
= 25°C
DS = 50V
Pulse Test
Pulse Test
V
3
2
75°C
125°C
100
7
5
3
2
4
0
10–1
0
4
8
12
16
20
10–1
2
3
5 7 100
2
3
5 7 101
GATE-SOURCE VOLTAGE
VGS (V)
DRAIN CURRENT ID (A)
CAPACITANCE VS.
DRAIN-SOURCE VOLTAGE
(TYPICAL)
SWITCHING CHARACTERISTICS
(TYPICAL)
2
103
7
5
Tch = 25°C
Ciss
103
7
V
DD = 200V
GS = 10V
V
R
GEN = RGS = 50Ω
5
3
2
3
2
t
t
d(off)
102
7
Coss
Crss
102
7
5
5
tf
3
2
3
2
t
r
Tch = 25°C
f = 1MHz
101
7
d(on)
V
GS = 0V
5
101
2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 2 3
10–1
2
3
5 7 100
2
3
5 7 101
DRAIN-SOURCE VOLTAGE DS (V)
V
DRAIN CURRENT ID (A)
Feb.1999
MITSUBISHI Nch POWER MOSFET
FS7VS-12
HIGH-SPEED SWITCHING USE
GATE-SOURCE VOLTAGE
VS.GATE CHARGE
(TYPICAL)
SOURCE-DRAIN DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
20
16
12
8
20
16
12
8
V
GS = 0V
TC=
125°C
Tch = 25°C
= 7A
Pulse Test
ID
25°C
75°C
VDS = 100V
200V
400V
4
4
0
0
0
20
40
60
80
100
0
0.8
1.6
2.4
3.2
4.0
GATE CHARGE
Qg
(nC)
SOURCE-DRAIN VOLTAGE VSD (V)
ON-STATE RESISTANCE VS.
CHANNEL TEMPERATURE
(TYPICAL)
THRESHOLD VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
101
7
5
5.0
4.0
3.0
2.0
1.0
0
V
DS = 10V
= 1mA
V
GS = 10V
I
D
ID = 1/2ID
Pulse Test
3
2
100
7
5
3
2
10–1
–50
0
50
100
150
–50
0
50
100
150
CHANNEL TEMPERATURE Tch (°C)
CHANNEL TEMPERATURE Tch (°C)
BREAKDOWN VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTICS
101
7
1.4
1.2
1.0
0.8
0.6
0.4
V
GS = 0V
5
I
D = 1mA
3
2
D=1
0.5
100
7
5
0.2
0.1
3
P
DM
2
10–1
7
tw
0.05
0.02
0.01
T
tw
T
5
D=
3
2
Single Pulse
10–2
10–423 5710–323 5710–223 5710–123 57100 23 57101 23 57102
PULSE WIDTH (s)
–50
0
50
100
150
CHANNEL TEMPERATURE Tch (°C)
tw
Feb.1999
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