FS7VS-12A [RENESAS]
High-Speed Switching Use Nch Power MOS FET; 高速开关用N沟道功率MOS FET
| 型号： | FS7VS-12A |
| 厂家： | 
RENESAS TECHNOLOGY CORP |
| 描述： | High-Speed Switching Use Nch Power MOS FET |
| 文件： | 总7页 (文件大小：202K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
FS7VS-12A
High-Speed Switching Use
Nch Power MOS FET
REJ03G0271-0100
Under development
Rev.1.00
Aug.20.2004
Features
•
•
•
•
Drive voltage : 10 V
DSS : 600 V
DS(ON) (max) : 1.3 Ω
ID : 7 A
V
r
Outline
LDPAK(S)-1
4
ate
Drain
3. Source
4. Drain
1
2
3
Applications
SMPS, lamp ballast, etc.
Maximum Ratin
(Tc = 25°C)
Parameter
Drain-source voltage
Gate-source voltage
Drain current
ol
VDSS
VGSS
ID
Ratings
600
±30
7
Unit
V
Conditions
VGS = 0 V
V
VDS = 0 V
A
Drain current (Pulsed)
Avalanche current (Pulsed)
Maximum power dissipation
Channel temperature
Storage temperature
Mass
IDM
21
A
IDA
7
A
L = 200 µH
PD
100
W
°C
°C
g
Tch
Tstg
—
– 55 to +150
– 55 to +150
1.2
Typical value
Rev.1.00, Aug.20.2004, page 1 of 6
FS7VS-12A
Electrical Characteristics
(Tch = 25°C)
Parameter
Drain-source breakdown voltage
Gate-source breakdown voltage
Gate-source leakage current
Drain-source leakage current
Gate-source threshold voltage
Drain-source on-state resistance
Drain-source on-state voltage
Forward transfer admittance
Input capacitance
Symbol
V(BR)DSS
V(BR)GSS
IGSS
Min.
600
±30
—
Typ.
—
Max.
—
Unit
V
Test conditions
ID = 1 mA, VGS = 0 V
IG = ±100 µA, VDS = 0 V
VGS = ±25 V, VDS = 0 V
VDS = 600 V, VGS = 0 V
ID = 1 mA, VDS = 10 V
ID = 3 A, VGS = 10 V
ID = 3 A, VGS = 10 V
ID = 3 A, VDS = 10 V
—
—
V
—
±10
1
µA
mA
V
IDSS
—
—
VGS(th)
rDS(ON)
VDS(ON)
| yfs |
Ciss
2.5
—
3.0
1.0
3.0
7.0
1100
100
25
3.5
1.3
3.9
—
Ω
—
V
4.2
—
S
—
pF
pF
pF
ns
s
VDS = 25 V, VGS = 10 V,
f = 1MHz
Output capacitance
Coss
Crss
—
—
Reverse transfer capacitance
Turn-on delay time
—
—
td(on)
—
20
—
VDD = 200 V, ID = 3 A,
GS = 10 V,
GEN = RGS = 50 Ω
V
R
Rise time
tr
—
25
—
Turn-off delay time
td(off)
—
150
35
—
Fall time
tf
—
—
Source-drain voltage
VSD
—
1.5
—
3 A, VGS = 0 V
el to case
Thermal resistance
Rth(ch-c)
—
Rev.1.00, Aug.20.2004, page 2 of 6
FS7VS-12A
Performance Curves
Drain Power Dissipation Derating Curve
Maximum Safe Operating Area
102
7
120
100
80
60
40
20
0
5
3
2
101
7
5
tw =10µs
100µs
3
2
100
7
5
1ms
3
2
Tc = 25°C
Single Pulse
DC
10-1
0
50
100
150
200
100 2 3 5 7101 2 3 5 7102 2 3 5 7103
Case Temperature Tc (°C)
Drainrce Voltage V
DS
(V)
Output Characteristics (Typical)
s (Typical)
20
16
12
8
Tc = 25°C
Pulse Test
GS
= 20V,10V,
8V,6V
V
GS
= 20V,10V,8V
6V
5V
P
= 100W
D
5V
P
=
D
4
2
4V
0
0
0
0
10
20
4
8
12
16
20
Drain-So
Drain-Source Voltage V (V)
DS
Gate-So)
On-State Resistance vs.
Drain Current (Typical)
40
32
24
16
8
2.0
1.6
1.2
0.8
0.4
0
c = 25°C
Pulse Test
V
= 10V
GS
20V
I
D
= 14A
10A
7A
Tc = 25°C
Pulse Test
3A
0
0
4
8
12
16
20
10-1
2
3
5 7100
2
3
5 7101
2
3
5 7102
Gate-Source Voltage V
(V)
Drain Current I (A)
D
GS
Rev.1.00, Aug.20.2004, page 3 of 6
FS7VS-12A
Forward Transfer Admittance vs.
Drain Current (Typical)
Transfer Characteristics (Typical)
Tc = 25°C
102
7
20
16
12
8
5
V
= 10V
DS
Pulse Test
3
2
Tc = 25°C
101
7
5
3
2
100
7
5
75°C
125°C
4
3
2
V
= 10V
DS
Pulse Test
0
0
10-1
4
8
12
16
20
10-1
2
3
5 7 100
2
3
5 7 101
Gate-Source Voltage V
(V)
Drain Current I (A)
D
GS
Capacitance vs.
Drain-Source Voltage (Typical)
eristics (Typical)
104
7
00V
= R = 50Ω
GS
5
N
3
2
103
7
5
Ciss
td(off)
tf
tr
3
2
102
7
5
td(on)
Tch = 25°C
f = 1MHz
101
7
3
2
V
GS
= 0V
101
5
2 3 5 7100 2 3 5
10-1
2
3
5 7 100
2
3
5 7 101
Drain-Sou
Drain Current I (A)
D
Source-Drain Diode Forward
Characteristics (Typical)
20
16
12
8
20
16
12
8
Tch = 25°C
= 7A
I
D
Tc = 125°C
V
= 100V
DS
200V
400V
75°C
25°C
4
4
V
= 0V
Pulse Test
GS
0
0
0
0
20
40
60
80
100
0.8
1.6
2.4
3.2 4.0
Gate Charge Qg (nC)
Source-Drain Voltage V
(V)
SD
Rev.1.00, Aug.20.2004, page 4 of 6
FS7VS-12A
On-State Resistance vs.
Channel Temperature (Typical)
Threshold Voltage vs.
Channel Temperature (Typical)
101
7
5.0
4.0
3.0
2.0
1.0
0
V
= 10V
V
= 10V
GS
= 3A
Pulse Test
DS
= 1mA
I
D
I
D
5
3
2
100
7
5
3
2
10–1
–50
0
50
100
150
–50
0
50
100
150
Channel Temperature Tch (°C)
Channel Temperature Tch (°C)
Breakdown Voltage vs.
Channel Temperature (Typical)
Transidance Characteristics
1.4
1.2
1.0
0.8
0.6
0.4
101
7
V
= 0V
GS
= 1mA
5
I
D
1
.05
.02
Single Pulse
–50
0
50
1
04
2
3
5
710–3
2
3
5
710–2
2
3
5
710–1
2
3
5
7100
2
3
5
7101
Channel Tempera
Pulse Width tw (s)
Switching
Switching Waveform
onitor
Vin Monitor
90%
R
10%
10%
GEN
Vin
R
L
Vout
10%
V
DD
R
GS
90%
90%
t
t
r
t
t
f
d(on)
d(off)
Rev.1.00, Aug.20.2004, page 5 of 6
FS7VS-12A
Package Dimensions
As of January, 2003
Unit: mm
4.44 ± 0.2
7.8
6.6
10.2 ± 0.3
1.3 ± 0.15
2.49 ± 0.2
+ 0.2
– 0.1
0.1
2.2
1.37 ± 0.2
0.4 ± 0.1
+ 0.2
– 0.1
1.3 ± 0.2
0.86
2.54 ± 0.5
2.54 ± 0.5
Pa
1)
g
Order Code
Standard order
code example
Lead form
Standard packing
d order code
Surface-mounted type Taping
– T +Direction (1 or 2) +1
FS7VS-12A-T11
Note : Please confirm the specificat
Rev.1.00, Aug.20.2004, page 6 of 6
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