UNRF2AK [PANASONIC]
Small Signal Bipolar Transistor, 0.08A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, 0.60 X 1 MM, 0.39 MM HEIGHT, ROHS COMPLIANT, LEADLESS, ULTRA SMALL, ML3-N2, 3 PIN;
| 型号： | UNRF2AK |
| 厂家： | 
PANASONIC |
| 描述： | Small Signal Bipolar Transistor, 0.08A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, 0.60 X 1 MM, 0.39 MM HEIGHT, ROHS COMPLIANT, LEADLESS, ULTRA SMALL, ML3-N2, 3 PIN 开关 晶体管 |
| 文件： | 总3页 (文件大小：427K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
This product complies with the RoHS Directive (EU 2002/95/EC).
Transistors with built-in Resistor
Silicon NPN epitaxial planar type
For digital circuits
Unit: mm
Features
Optimum for high-density mounting and downsizing of the equipment for
Ultraminiature leadless package 0.6 mm 1.0 mm (height 0.39 mm)
3
2
1
+0.01
0.39
1.00±0.05
−0.03
Absolute Maximum Ratings T= 25C
0.25±0.05
0.25±0.051
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector current
Symbol
VCBO
VCEO
IC
Rating
Unit
V
50
5
V
2
3
0.65±0.01
0.05±0.03
mA
mW
C
Total power dissipation
P
100
Junction temperature
Tj
125
1: Base
2: Emitter
Storage temperature
T
stg
–55 t+125
C
3: Collector
ML3-N2 Package
Marking Symbol: 5L
Internal Connection
R1
10 kΩ
B
C
E
R2
4.7 kΩ
Electrical Chstics = 25C3C
Symbol
Conditions
Min
50
Typ
Max
Unit
V
Collector-base voltagr open)
Collector-emitter voltage (Base open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Collector-emitter saturation voltage
Output voltage high-level
VCBO I= 10 µA, I= 0
VCEO IC = 2 mA, IB = 0
50
V
ICBO
ICEO
IEBO
hFE
VCB = 50 V, I= 0
VCE = 50 V, IB = 0
VEB = 6 V, I= 0
0.1
0.5
1.0
µA
µA
mA
VCE = 10 V, I= 5 mA
20
V
VCE(sat) IC = 10 mA, IB = 0.3 mA
0.25
VOH
VOL
R1
VCC = 5 V, VB = 0.5 V, R= 1 kΩ
4.9
V
Output voltage low-level
VCC = 5 V, VB = 3.5 V, R= 1 kΩ
0.2
+30%
2.6
V
Input resistance
10
kΩ
30%
1.7
Resistance ratio
R1 / R2
fT
2.13
150
Transition frequency
VCB = 10 V, I2 mA, f = 200 MHz
MHz
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: November 2005
SJH00121AED
1
This product complies with the RoHS Directive (EU 2002/95/EC).
UNRF2AK
PT T
IC V
VCE(sat) IC
1
120
120
IC / IB = 10
Ta = 25°C
IB
=
500 µA
450 µA
400 µA
80
40
0
80
40
350 µA
300 µA
10−1
Ta = 85°C
−25°C
250 µA
25°C
20µA
150 µA
10−2
0
0
1
10
102
0
4
12
40
80
120
Collector current IC (mA)
Colletor-emitter voltage VCE (V)
Ambient temperature Ta (°C)
hFE I
Cob VCB
IO VIN
10
102
250
200
150
100
VCE = 10 V
f = 1 MHz
Ta = 25°C
10
1
Ta = 85°C
25°C
−25°C
0
0
VO = 5 V
Ta = 25°C
10−1
1
10−
1
10
102
103
0
10
20
30
40
0
4
8
12
Collector-base voltage VCB (V)
Input voltage VIN (V)
Collectr currenIC (mA)
O
102
VO = 0.2 V
Ta = 25°C
10
1
10−1
10−1
1
10
102
Output current IO (mA)
2
SJH00121AED
Request for your special attention and precautions in using the technical information and
semiconductors described in this book
(1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
regulations of the exporting country, especially, those with regard to security export control, must be observed.
(2) The technical information described in this book is intended only to show the main characteristics and application circuit examples
of the products, and no license is granted under any intellectual property right or other right owned by our company or any other
company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other
company which may arise as a result of the use of technical information described in this book.
(3) The products described in this book are intended to be used for standard applications or general electronic equipment (such as office
equipment, communications equipment, measuring instruments and household appliances).
Consult our sales staff in advance for information on the following applications:
– Special applications (such as for airplanes, aerospace, automobiles, traffic contrl equipment, combustion equipment, life support
systems and safety devices) in which exceptional quality and reliability equired, or if the failure or malfunction of the prod-
ucts may directly jeopardize life or harm the human body.
– Any applications other than the standard applications intended.
(4) The products and product specifications described in this book re subjet to change wnotice for modification and/or im-
provement. At the final stage of your design, purchasingouse f the roducts, therfor the most up-to-date Product
Standards in advance to make sure that the latest specifictions saisfy your requirements.
(5) When designing your equipment, comply with the rnge f absolute maximuing nd the guaranteed operating conditions
(operating power supply voltage and operating nvirnt etc.). Especiallyplee be creful not to exceed the range of absolute
maximum rating on the transient state, such as powpower-off and mode-witching. Otherwise, we will not be liable for any
defect which may arise later in your equpment
Even when the products are used withthe guarnteed values, ake nto te cosideration of incidence of break down and failure
mode, possible to occur to semicuctor roducts. Mesures the syems such as redundant design, arresting the spread of fire
or preventing glitch are recomin ordeto prevent pysicainjury, fire, social damages, for example, by using the products.
(6) Comply with the instructionfor ue in rder to prevent reakdown and characteristics change due to external factors (ESD, EOS,
thermal stress and mcanical stress) at the time of handlin, mounting or at customer's process. When using products for which
damp-proof packinis reqred, satisfy the condions, suh as shelf life and the elapsed time since first opening the packages.
(7) This book may e noreprinted or repwhther wholly or partially, without the prior written permission of Matsushita
Electric ndurial Co., Ltd.
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