UNRF2AV [PANASONIC]
Small Signal Bipolar Transistor, 0.08A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, 1 X 0.60 MM, 0.39 MM HEIGHT, ROHS COMPLIANT, LEADLESS, ULTRA MINIATURE, ML3-N2, 3 PIN;
| 型号： | UNRF2AV |
| 厂家： | 
PANASONIC |
| 描述： | Small Signal Bipolar Transistor, 0.08A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, 1 X 0.60 MM, 0.39 MM HEIGHT, ROHS COMPLIANT, LEADLESS, ULTRA MINIATURE, ML3-N2, 3 PIN 晶体 小信号双极晶体管 开关 |
| 文件： | 总3页 (文件大小：204K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
This product complies with the RoHS Directive (EU 2002/95/EC).
Transistors with built-in Resistor
UNRF2AL
Silicon NPN epitaxial planar type
Unit: mm
For digital circuits
3
2
1
■ Features
• Suitable for high-density mounting and douwsizing of the equip-
ment for ultraminiature leadless package
• Package: 0.6 mm × 1.0 mm (height 0.39 mm)
+0.01
0.39
1.00 0.0ꢀ
−0.03
0.2ꢀ 0.0ꢀ
0.2ꢀ 0.0ꢀ
1
■ Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol
Rating
Unit
V
2
3
Collector-base voltage (Emitter open) VCBO
Collector-emitter voltage (Base open) VCEO
50
50
0.6ꢀ 0.01
0.0ꢀ 0.03
V
Collector current
IC
PT
Tj
80
mA
mW
°C
1: Base
2: Emitter
3: Collector
Total power dissipation
Junction temperature
Storage temperature
100
125
ML3-N2 Package
Tstg
−55 to +125
°C
Marking Symbol: 1C
Internal Connection
R1 (4.7 kΩ)
B
C
E
R2
(4.7 kΩ)
■ Electrical Characteristics Ta = 25°C 3°C
Parameter
Symbol
VCBO
VCEO
ICBO
Conditions
Min
50
Typ
Max
Unit
V
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Collector-emitter saturation voltage
Output voltage high level
IC = 10 µA, IE = 0
IC = 2 mA, IB = 0
VCB = 50 V, IE = 0
VCE = 50 V, IB = 0
VEB = 6 V, IC = 0
VCE = 10 V, IC = 5 mA
50
V
0.1
0.5
2.0
µA
µA
mA
ICEO
IEBO
hFE
20
VCE(sat) IC = 10 mA, IB = 0.3 mA
0.25
V
VOH
VOL
R1
VCC = 5 V, VB = 0.5 V, RL = 1 kΩ
4.9
V
Output voltage low level
VCC = 5 V, VB = 2.5 V, RL = 1 kΩ
0.2
+30%
1.2
V
Input resistance
−30%
4.7
0.1
150
kΩ
Resistance ratio
R1 / R2
fT
0.8
Transition frequency
VCB = 10 V, IE = −2 mA, f = 200 MHz
MHz
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: May 2005
SJH00104BED
1
This product complies with the RoHS Directive (EU 2002/95/EC).
UNRF2AL
PT Ta
IC VCE
VCE(sat) IC
140
120
100
80
60
40
20
0
10
IC / IB = 10
0.8 mA
Ta = 25°C
0.6 mA
IB = 1.0 mA
0.9 mA
120
100
80
60
40
20
0
0.7 mA
0.5 mA
0.4 mA
1
0.3 mA
0.2 mA
Ta = 85°C
0.1
−25°C
25°C
0.01
0
2
4
6
8
10
12
0
80
40
120
1
10
100
1000
(
)
Collector current IC mA
(
)
Ambient temperature Ta °C
(
)
V
Collector-emitter voltage VCE
hFE IC
Cob VCB
IO VIN
300
250
200
150
100
50
100
10
Ta = 85°C
VO = 5 V
Ta = 25°C
f = 1 MHz
Ta = 25°C
VCE = 10 V
10
25°C
−25°C
0
0.1
1
1
0
1
2
3
4
5
6
1
10
100
1000
0
10
20
30
40
(
)
Collector current IC mA
(
)
V
Collector-base voltage VCB (V)
Input voltage VIN
VIN IO
10
VO = 0.2 V
Ta = 25°C
1
0.1
0.1
1
10
100
(
)
Output current IO mA
SJH00104BED
2
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