UNRF2AM [ETC]
Composite Device - Transistors with built-in Resistor ; 复合器件 - 晶体管具有内置电阻\n
| 型号： | UNRF2AM |
| 厂家： | 
ETC |
| 描述： | Composite Device - Transistors with built-in Resistor
|
| 文件： | 总3页 (文件大小：81K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Transistors with built-in Resistor
UNRF2AM
Silicon NPN epitaxial planar transistor
Unit: mm
For digital circuits
3
2
1
■ Features
• Suitable for high density package and downsizing of the equipment
for Ultraminiature leadless package
+0.01
0.39
1.00 0.0ꢀ
−0.03
0.6 mm × 1.0 mm (height 0.50 mm)
• Thickness: 0.4 mm (max.) package is achieved
0.2ꢀ 0.0ꢀ
0.2ꢀ 0.0ꢀ
1
■ Absolute Maximum Ratings Ta = 25°C
2
3
0.6ꢀ 0.01
0.0ꢀ 0.03
Parameter
Symbol
VCBO
VCEO
IC
Rating
Unit
V
Rating
of
Collector to base voltage
Collector to emitter voltage
50
50
1: Base
2: Emitter
3: Collector
V
element Collector current
Overall Total power dissipation
Junction temperature
80
mA
mW
°C
ML3-N2 Package
PT
100
Marking Symbol: 2Z
Internal Connection
Tj
125
Storage temperature
Tstg
−55 to +125
°C
R1 (2.2 kΩ)
B
C
E
R2
(47 kΩ)
■ Electrical Characteristics Ta = 25°C 3°C
Parameter
Collector to base voltage
Collector to emittter voltage
Collector cutoff current
Symbol
VCBO
VCEO
ICBO
ICEO
Conditions
Min
50
Typ
Max
Unit
V
IC = 10 µA, IE = 0
IC = 2 mA, IB = 0
50
V
VCB = 50 V, IE = 0
0.1
0.5
0.2
µA
VCE = 50 V, IB = 0
Emitter cutoff current
IEBO
VEB = 6 V, IC = 0
mA
Forward current transfer ratio
Collector to emitter saturation voltage
High level output voltage
Low level output voltage
Input resistance
hFE
VCE = 10 V, IC = 5 mA
IC = 10 mA, IB = 0.3 mA
VCC = 5 V, VB = 0.5 V, RL = 1 kΩ
VCC = 5 V, VB = 2.5 V, RL = 1 kΩ
80
4.9
VCE(sat)
VOH
0.25
V
V
VOL
0.2
V
R1
−30%
2.2
0.047
150
+30%
kΩ
Resistance ratio
R1 / R2
fT
Gain bandwidth product
VCB = 10 V, IE = −2 mA, f = 200 MHz
MHz
Publication date: July 2002
SJH00061AED
1
UNRF2AM
PT Ta
IC VCE
VCE(sat) IC
120
100
80
60
40
20
0
80
70
60
50
40
30
20
10
0
1
IC / IB = 10
IB = 1.0 mA
0.9 mA
0.8 mA
0.7 mA
0.6 mA
0.5 mA
0.4 mA
0.3 mA
0.2 mA
Ta = 85°C
0.1
−25°C
0.1 mA
25°C
Ta = 25°C
10
0.01
0
1
1
20 40 60 80 100 120 140
0
2
4
6
8
12
1
10
100
(
)
(
)
(
)
Ambient temperature Ta °C
Collector to emitter voltage VCE
V
Collector current IC mA
hFE IC
Cob VCB
IO VIN
300
250
200
150
100
50
10
100
10
1
VO = 5 V
Ta = 25°C
VCE = 10 V
Ta = 85°C
f = 1 MHz
Ta = 25°C
25°C
−25°C
0
1
0.1
10
100
0
5
10 15 20 25 30 35 40
0
0.5
( )
Input voltage VIN V
1.0
1.5
2.0
2.5
(
)
(
)
V
Collector current IC mA
Collector to base voltage VCB
VIN IO
10
VO = 0.2 V
Ta = 25°C
1
0.1
10
100
(
)
Output current IO mA
SJH00061AED
2
Request for your special attention and precautions in using the technical information
and semiconductors described in this material
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government
if any of the products or technologies described in this material and controlled under the "Foreign
Exchange and Foreign Trade Law" is to be exported or taken out of Japan.
(2) The technical information described in this material is limited to showing representative characteris-
tics and applied circuits examples of the products. It neither warrants non-infringement of intellec-
tual property right or any other rights owned by our company or a third party, nor grants any license.
(3) We are not liable for the infringement of rights owned by a third party arising out of the use of the
product or technologies as described in this material.
(4) The products described in this material are intended to be used for standard applications or general
electronic equipment (such as office equipment, communications equipment, measuring instru-
ments and household appliances).
Consult our sales staff in advance for information on the following applications:
• Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment,
combustion equipment, life support systems and safety devices) in which exceptional quality and
reliability are required, or if the failure or malfunction of the products may directly jeopardize life or
harm the human body.
• Any applications other than the standard applications intended.
(5) The products and product specifications described in this material are subject to change without
notice for modification and/or improvement. At the final stage of your design, purchasing, or use of
the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that
the latest specifications satisfy your requirements.
(6) When designing your equipment, comply with the guaranteed values, in particular those of maxi-
mum rating, the range of operating power supply voltage, and heat radiation characteristics. Other-
wise, we will not be liable for any defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of
incidence of break down and failure mode, possible to occur to semiconductor products. Measures
on the systems such as redundant design, arresting the spread of fire or preventing glitch are
recommended in order to prevent physical injury, fire, social damages, for example, by using the
products.
(7) When using products for which damp-proof packing is required, observe the conditions (including
shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets
are individually exchanged.
(8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written
permission of Matsushita Electric Industrial Co., Ltd.
2002 JUL
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