MN3672RE [PANASONIC]

CCD Sensor, 1V, Rectangular, Through Hole Mount, DIP-40;
MN3672RE
型号: MN3672RE
厂家: PANASONIC    PANASONIC
描述:

CCD Sensor, 1V, Rectangular, Through Hole Mount, DIP-40

CD 传感器 换能器
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CCD Linear Image Sensor  
MN3672RE(Preliminary)  
Color CCD Linear Image Sensor  
with 5000 Bits each for R, G, and B Colors  
Overview  
Pin Assignments  
The MN3672RE is a high speed high responsivity CCD color linear  
image sensor with 5000 pixels for each of the colors R, G, and B.  
This device consists of a photodetector region having low dark output  
floating photodiodes and a CCD analog shift register in the read out  
region.  
identiffies  
the Pin 1  
position.  
1
1
2
3
4
5
6
7
8
9
10  
11  
12  
13  
14  
15  
16  
17  
18  
19  
20  
40  
39  
38  
37  
36  
35  
34  
33  
32  
31  
30  
29  
28  
27  
26  
25  
24  
23  
22  
21  
OS3  
DS  
OS1  
OS2  
VDD  
ø SG1  
VSS  
ø R  
NC  
ø 2A  
ø 1A  
ø 1B  
ø 2B  
ø2C  
ø 1C  
ø1D  
ø2D  
SUB  
NC  
V
SS  
It is possible to read out an A3 size color document with a high  
quality and a high resolution of 400dpi.  
ø SG3  
V
SS  
ø 1L  
NC  
ø 2H  
ø 1H  
ø 1G  
ø 2G  
ø 2F  
ø 1F  
ø1E  
ø 2E  
NC  
NC  
NC  
ø SG3  
ø SG2  
Features  
5000 floating photodiodes for each color R, G, and B, and an n-  
channel buried type CCD shift registers for read out are integrated  
in a single chip.  
Since the photodiode lines for each color are neighboring (with a  
line spacing of 14µm), it is possible to greatly reduce the memory  
for compensation between lines.  
The configuration of the signal processing circuits such as the  
preamplifier, sample and hold circuit, etc., becomes simpler since  
the separate signal output pins are provided for the pixels of each of  
the colors R, G, and B.  
V
SS  
RGB primary colors type on chip color filters are used for color  
separation.  
V
SS  
ø SG1  
The dark signal output voltage has been suppressed to a very low  
level due to the use of photodiodes with a new structure. (0.2mV  
(typ.) at accumulation time of 10ms.)  
5000  
(Top View)  
Large signal output of typically 1.0V at saturation can be obtained.  
Operation with a single +12V positive power supply.  
C24  
WDIP040-C-0400  
Application  
Color graphic read out in color copying machines, color scanners,  
and color fax machines.  
MN3672RE (Preliminary)  
CCD Linear Image Sensor  
Block Diagram  
OS3 DS  
40 39  
V
øSG3  
V
ø1L ø2H ø1H ø1G ø2G ø 2F ø1F ø1E ø2E  
øSG3 øSG2  
22 21  
SS  
SS  
38 37 36 35 33 32 31 30 29 28 27 26  
CCD analog shift register 3  
Photodiode (Blue)  
Photodiode (Red)  
Photodiode (Green)  
CCD analog shift register 1  
CCD analog shift register 2  
BR,BB,BG:  
Black reference pixels  
(24 pixels each)  
DR,DB,DG:  
Dummy invalid pixels  
(6 pixels each)  
1
2
3
4
5
6
8
9
10 11 12 13 14 15 16 18 19 20  
ø2C ø1C  
ø
ø2D  
øSG1  
OS1 OS2  
V
DD øSG1  
V
øR ø 2A ø1A ø 1B ø2B  
SUB V  
V
SS  
1D  
SS  
SS  
Absolute Maximum Ratings (Ta=25˚C, VSS=0V)  
Parameter  
Symbol  
VDD  
Rating  
Unit  
V
– 0.3 to +17  
– 0.3 to +17  
– 0.3 to +17  
0 to + 60  
Power supply voltage  
Input pin voltage  
V
I
V
Output pin voltage  
VO  
Topr  
Tstg  
V
Operating temperature range  
Storage temperature range  
˚C  
˚C  
–25 to + 85  
Operating Conditions  
Voltage conditions (Ta=0 to + 60˚C, VSS=0V)  
Parameter  
Symbol  
VDD  
Condition  
min  
typ  
12.0  
10.0  
0.5  
max  
13.0  
11.0  
0.8  
Unit  
V
Power supply voltage  
11.0  
0
Vø H  
CCD shift register clock High level  
CCD shift register clock Low level  
1A ~ ø1L, ø2A~ ø2H  
1A ~ ø1L, ø2A~ ø2H  
)
)
V
Vø L  
VS1H  
VS2H  
VS3H  
VSL  
V
V
ø H +2  
10.0  
4.0  
SG1  
SG2  
SG3  
)
)
)
V
9.0  
0
11.0  
V
Shift gate clock High level  
V
SG1~ øSG3  
R)  
)
V
0.5  
0.8  
Shift gate clock Low level  
Reset gate clock High level  
Reset gate clock Low level  
VRH  
VRL  
V
V
–1  
VDD  
0.5  
VDD  
0.8  
DD  
R)  
V
0
CCD Linear Image Sensor  
MN3672RE (Preliminary)  
Timing conditions (Ta=0 to + 60˚C)  
Parameter  
Symbol  
fC  
Condition  
min  
0.1  
0.1  
0
typ  
1.0  
1.0  
10  
max  
5.0  
5.0  
20  
Unit  
MHz  
MHz  
ns  
Shift register clock frequency  
Reset clock frequency (=data rate)  
Shift register clock rise time  
Shift register clock fall time  
Shift clock 1 rise time  
Shift clock 1 fall time  
See drive timing diagram (2) fC=1/2T  
See drive timing diagram (2) fR=1/2T  
fR  
tCr  
See drive timing diagram (2) fR=1/2T  
0
10  
20  
ns  
tCf  
tSG1r  
tSG1f  
tSG1s  
0
20  
50  
ns  
0
20  
50  
ns  
µs  
Shift clock 1 set up time  
Shift clock 1 pulse width  
Shift clock 2 rise time  
Shift clock 2 fall time  
See drive timing diagram (1)  
µs  
tSG1w  
tSG2r  
tSG2f  
tSG2w  
tSG3r  
tSG3f  
tSG3s  
tSG3w  
tSG3h  
0
0
15  
15  
50  
50  
ns  
ns  
µs  
Shift clock 2 pulse width  
Shift clock 3 rise time  
Shift clock 3 fall time  
See drive timing diagram (1)  
0
0
20  
20  
50  
50  
ns  
ns  
µs  
Shift clock 3 set up time  
Shift clock 3 pulse width  
Shift clock 3 hold time  
Reset clock rise time  
µs  
µs  
See drive timing diagram (1)  
0
0
5
5
10  
10  
ns  
ns  
ns  
ns  
ns  
tRr  
tRf  
Reset clock fall time  
tRs  
tRw  
tRh  
See drive timing diagram (2)  
Reset clock set up time  
Reset clock pulse width  
Reset clock hold time  
0.7T  
10  
10  
Electrical Characteristics  
Clock input capacitance (Ta=0 to + 60˚C)  
Parameter  
Symbol  
Condition  
min  
typ  
max  
Unit  
pF  
C1A, C1B  
C1C, C1D  
C2A, C2B  
C2C, C2D  
Shift register clocks A to D  
input capacitance  
160  
C1E , C1F  
C1G, C1H  
C2E , C2F  
C2G, C2H  
Shift register clocks E to H  
input capacitance  
120  
pF  
VIN =12V, f=1MHz  
C1L  
CRS  
Shift register final stage clock input capacitance  
Reset clock input capacitance  
Shift clocks 1, 3 input capacitance  
Shift clock 2 input capacitance  
10  
10  
pF  
pF  
pF  
pF  
CSG1, CSG3  
CSG2  
150  
250  
DC characteristics  
Parameter  
Symbol  
IDD  
Condition  
Condition  
min  
typ  
15  
max  
Unit  
mA  
Power supply current  
VDD =+12V  
AC characteristics  
Parameter  
Symbol  
tOS  
min  
typ  
50  
max  
Unit  
ns  
Signal output delay time  
MN3672RE (Preliminary)  
CCD Linear Image Sensor  
Optical Characteristics  
<Inspection conditions>  
Ta=25˚C, VDD=12V,  
Pulse: VøH=10V, VRH=12V, VS1H=12V, VS2H=10V, VS3H=4V, fC=fR=1MHz, Tint (accumulation time)=10ms  
Light source: A light source with IR cutting filter (CM-500S)  
Optical system: A slit with an aperture dimensions of 20mm × 20mm is used at a distance of 200mm from the sensor (equivalent  
to F=10).  
Load resistance = 100k Ohms  
These specifications apply to the 5000 valid pixels for each color excluding the dummy pixels D1 to D6.  
Parameter  
Symbol  
RR  
Condition  
min  
typ  
1.2  
max  
Unit  
Note 1  
Note 1  
Note 1  
Note 2  
Note 3  
Note 4  
Note 4  
Note 4  
Responsivity  
RG  
1.5  
V/lx·s  
RB  
1.3  
PRNU  
VSAT  
SER  
10  
Photo response non-uniformity  
Saturation output voltage  
%
V
1.0  
0.83  
0.67  
0.77  
0.2  
Saturation exposure  
lx·s  
SEG  
SEB  
VDRK  
DSNU  
STTE  
ZO  
Dark condition, see Note 5  
Dark condition, see Note 6  
2.0  
2.0  
Dark signal output voltage  
Dark signal output non-uniformity  
Shift register total transfer efficiency  
Output impedance  
mV  
mV  
0.1  
92  
%
1
kΩ  
DR  
Note 7  
5000  
4.5  
Dynamic range  
V
V
VOS  
(OS1, OS2, OS3) see Note 8  
Signal output pin DC level  
Compensation output pin DC level  
Signal and compensation output pin DC level difference  
VDS  
Note 8  
Note 8  
4.5  
OS VDS  
V
|
|
mV  
300  
Connect all NC pins externally to VSS (GND).  
Note 1) Responsivity (R)  
This is the value obtained by dividing the average output voltage (V) of all valid pixels of each of the colors R, G, and B  
by the exposure (lx·s). The exposure is the product of the incident light intensity (lx) and the accumulation time (s).  
Since the responsivity changes with the spectral distribution of the light source used, care should be taken when using a  
light source other than the daylight type fluorescent lamp specified in the inspection conditions.  
Note 2) Photo response non-uniformity (PRNU)  
This is defined by the following equation where Xave is the average output voltage of the active pixels of each of the colors  
R, G, and B, and x is the difference between the output voltage of the maximum (or minimum) output pixel and Xave  
,
when the photodetector region is illuminated with light of a uniform illumination intensity distribution.  
x
Xave  
×100 (%)  
PRNU=  
The incident light intensity shall be 50% of the standard saturation llight intensity.  
Note 3) Saturation output voltage (VSAT  
)
This is the output voltage at the point beyond which it is not possible to maintain the linearity of the photoelectric  
conversion characteristics as the exposure is increased. (The exposure at this point is called the saturation exposure.)  
Note 4) Saturation Exposure (SE)  
This is the exposure beyond which it is not possible to maintain the linearity of the output voltage as the exposure is  
increased. When designing the equipment using these devices, make sure that the incident light exposure is set with  
sufficient margin so that the CCD never gets saturated.  
Note 5) Dark signal output voltage (VDRK  
)
This is defined as the average of the output from all the valid pixels in the dark condition at Ta=25˚C, T =10ms.  
int  
Normally, the dark signal output voltage gets doubled for every 8 to 10˚C increase in Ta and is proportional to Tint.  
Note 6) Dark signal non-uniformity (DSNU)  
This is defined as the difference between the maximum value among the output voltages of the all valid pixels at Ta=25˚C  
and Tint=10ms and VDRK  
.
VDRK  
DSNU  
CCD Linear Image Sensor  
MN3672RE (Preliminary)  
Optical Characteristics (continued)  
Note 7) Dynamic range (DR)  
This is defined by the following equation.  
V
SAT  
VDRK  
DR=  
Since the dark signal output voltage is proportional to the accumulation time, the dynamic range becomes wider when the  
accumulation time is shorter.  
Note 8) The signal output pin DC level (VOS) and the compensation output pin DC level (VDS) are the voltage values given in the  
following figure.  
OS1  
Reset feed  
through level  
OS2  
DS waveform  
VSS  
OS3  
waveform  
VDS  
VOS  
VSS  
Construction of the Image Sensor  
The MN3672 can be made up of the three sections of—a)  
photo detector region, b) CCD transfer region (shift register),  
and c) output region.  
divided into four segments each of which are provided with  
separate ø1, ø2 clock pins, it is possible to reduce the heat  
generation in the chip and the load on the clock driver circuit  
by providing separate clock driver circuit for each pin during  
high speed operation.  
a) Photo detector region  
The photoelectric conversion device consists of an 11µm  
floating photodiode and a 3µm channel stopper (isolation  
region) per pixel, and 5000 pixels' lines of each of the colors  
R, G, and B are arranged neighboring.  
The last gate of the CCD transfer region is connected to  
an  
independent pin (ø1L). By driving this pin independent of the  
other pins by a clock driver, it is possible to speed up the  
flow of signal charge into the charge to voltage conversion  
region thereby making the output waveform rise sharply.  
This makes it easy to obtain margin of the signal processing  
time during high speed drive operation.  
There is a spacing of one line between B-R in the sideways  
scanning direction (center to center spacing of 14µm) and a  
similar one line spacing between R-G in the sideways  
scanning direction (center to center spacing of 14µm).  
The photodetector window is a rectangle of dimensions 8µm  
(Horizontal) × 11µm (Vertical), and the areas other than the  
photodetector window are optically shielded.  
c) Output region  
The signal charge transferred to the output region is first sent  
to the charge to voltage conversion region where it is  
converted into a voltage level corresponding to the amount of  
the signal charge, and then output after impedance  
conversion in a two stage source follower amplifier.  
The photodetector region has 24 optically shielded (black  
reference) pixels for each color that can be used as the black  
level reference.  
The DC level component not containing the optical signal  
and the clock noise component are output at the DS pin.  
b) CCD Transfer region (analog shift register)  
The signal charges obtained by photoelectric conversion are  
transferred to the CCD transfer regions of the respective  
colors during the period when the shift gate (øSG) is at the  
High level. The signal charges transferred to this analog shift  
register are successively transferred to the output region.  
A buried type CCD that can be driven by a two phase clock  
1, ø2) is used for the analog shift register.  
It is possible to obtain a signal with a high S/N ratio  
with  
reduced clock noise, etc., by carrying out differential  
amplification of the OS and DS outputs externally.  
In the CCD transfer region, since each CCD shift  
register is  
MN3672RE (Preliminary)  
CCD Linear Image Sensor  
Pin Descriptions  
Pin No.  
1
Symbol  
OS1  
OS2  
VDD  
øSG1  
VSS  
øR  
Pin name  
Signal output 1 (Red)  
Condition  
2
Signal output 2 (Green)  
Power supply  
3
4
Shift clock gate 1  
Ground  
Internally connected to pin 20.  
5
6
Reset clock  
7
NC  
ø2A  
ø1A  
ø1B  
Non connection  
8
CCD clock (Phase 2)  
CCD clock (Phase 1)  
CCD clock (Phase 1)  
CCD clock (Phase 2)  
CCD clock (Phase 2)  
CCD clock (Phase 1)  
CCD clock (Phase 1)  
CCD clock (Phase 2)  
Substrate  
9
10  
11  
12  
13  
14  
15  
16  
17  
18  
19  
20  
21  
22  
23  
24  
25  
26  
27  
28  
29  
30  
31  
32  
33  
34  
35  
36  
37  
38  
39  
40  
ø2B  
All pins are independent.  
ø2C  
ø1C  
(Separate drivers can be used)  
ø1D  
ø2D  
SUB  
NC  
VSS  
VSS  
øSG1  
øSG2  
øSG3  
NC  
NC  
NC  
ø2E  
Should be left open.  
Non connection  
Ground  
Connected to the aluminum layer for optical shielding.  
Internally connected to pin 4.  
Ground  
Shift clock gate 1  
Shift clock gate 2  
Shift clock gate 3  
Non connection  
Internally connected to pin 37.  
Non connection  
Non connection  
CCD clock (Phase 2)  
CCD clock (Phase 1)  
CCD clock (Phase 1)  
CCD clock (Phase 2)  
CCD clock (Phase 2)  
CCD clock (Phase 1)  
CCD clock (Phase 1)  
CCD clock (Phase 2)  
Non connection  
ø1E  
ø1F  
All pins are independent.  
ø2F  
(Separate drivers can be used)  
ø2G  
ø1G  
ø1H  
ø2H  
NC  
ø1L  
CCD final stage clock (Phase 1)  
Ground  
V
SS  
Connected to the aluminum layer for optical shielding.  
Internally connected to pin 22.  
øSG3  
Shift clock gate 3  
Ground  
V
SS  
DS  
Compensation output  
Signal output 3 (Blue)  
OS3  
Note) Connect all NC pins externally to VSS (GND).  
CCD Linear Image Sensor  
MN3672RE (Preliminary)  
Timing Diagram  
(1) I/O timing  
Green signal charge accumulation time (Tint.G )  
Red and Blue signal charge accumulation time (Tint.RB  
)
ø SG1  
ø SG2  
ø SG3  
5030 5032  
5034  
ø1A  
0
1
2
2
3
3
4
4
5
5
6
26 27 28 29 30 31 32 33 5029 5031 5033  
ø1L  
ø2A  
ø2H  
øR  
5031 5033 5035  
1
6
7
27 28 29 30 31 32 33 34 5030 5032 5034  
DS  
OS  
OS23  
B1 B2  
B23 B24  
D
D
D
1
2
4999 5000 D D D  
4 5 6  
1
2
3
OS1  
Blank feed  
(for 4 pixels)  
Black reference  
pixels  
(for 24 pixels)  
Dummy Valid pixel signal Invalid pixel  
invalid  
pixels  
(for 5000 pixels)  
signal  
(for 3 pixels)  
(for 3 pixels)  
(2) Drive timing 1  
(during shifting signal charge to CCD)  
< Pulse voltage level >  
t1  
t4  
H : 12V (V + 2V)  
øH  
øSG1  
L : 0V  
t3  
t5  
H : 10V (9V ~ 11V)  
L : 0V  
øSG2  
t7  
t2  
H : 3V ~ 4V  
L : 0V  
øSG3  
t6  
H : 10V (VøH  
L : 0V  
)
)
ø1  
t8  
t9  
H : 10V (VøH  
L : 0V  
ø2  
< Pulse timing >  
t15.5µs (t1> t2)  
t25µs (t2= t5)  
t30.5µs  
t40.5µs  
t55µs (t2= t5)  
t61µs  
t74µs  
t80.5µs  
t90.5µs  
MN3672RE (Preliminary)  
CCD Linear Image Sensor  
(2) Drive timing 2  
(during repeated pattern)  
90%  
10%  
ø2  
ø1  
tCr  
tCf  
90%  
50%  
10%  
tRS  
tRW  
tRh  
90%  
50%  
10%  
øR  
tRr  
tRf  
DS  
tOh  
2T  
tOS  
OS1  
OS2  
OS3  
Reference level  
50%  
Effective signal  
output period  
Graphs and Characteristics  
Spectral Response Characteristics  
100  
80  
60  
40  
20  
0
B
G
R
500  
600  
700  
800  
400  
Wavelength (nm)  

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