MIP502 [PANASONIC]
Silicon MOS IC; 硅MOS IC
| 型号： | MIP502 |
| 厂家： | 
PANASONIC |
| 描述： | Silicon MOS IC |
| 文件： | 总3页 (文件大小：42K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Intelligent Power Devices (IPDs)
MIP501, MIP502
Silicon MOS IC
MIP501
Unit : mm
7.5±0.2
4.5±0.2
■ Features
●
High breakdown voltage, N-Ch MOS FET output
90°
(VDSS > 40V Ron < 0.5Ω)
0.65±0.1
0.85±0.1
●
●
●
Over-current-protection function built-in
Reset function built-in
1.0±0.1
0.8C
0.8C
0.65±0.1
0.7±0.1
Direct drive possible by the logic circuit
■ Applications
●
0.5±0.1
2.5±0.2
0.4±0.1
2.05±0.2
Lamp drive
2.5±0.2
0.8C
1 : IN
2 : Drain
3 : Source
MT3 Type Package
1
2
3
■
Absolute Maximum Ratings (Ta= 25˚C)
Parameter
Symbol
VDSS
IOP
Rating
Unit
V
MIP502
Unit : mm
5.0±0.2
4.0±0.2
Output breakdown voltage
Output peak current
Output current
40
5
1.7
A
IOA
A
Input voltage
VIN
– 0.5 to 6
±10
V
Input current
IIN
mA
0.7±0.1
MIP501
MIP502
1.5
1 *
Allowable power
dissipation
PD
W
Junction temperature
Storage temperature
Tj
150
˚C
˚C
˚C
Tstg
Topr
– 55 to +150
– 40 to + 85
0.45 +0.15
-
0.1
0.45 +0.15
-0.1
Operating temperature
1.27
1.27
* The value at mounted on PCB (glass epoxy resin: 100 ×100mm). (For MIP502 only)
1 : Source
2 : Drain
3 : IN
1
2 3
TO-92NL Type Package
2.54±0.15
■ Block Diagram
2
DRAIN
Over voltage
protection circuit
3
IN
Over current
protection circuit
Reset circuit
1
SOURCE
Intelligent Power Devices (IPDs)
MIP501, MIP502
■ Pin Descriptions
No.1 pin : GND pin. Connect to the GND pin. (Source)
No.2 pin : Output pin. Connect to the load. The current flowing into this terminal is limited at about 5A. When this termi-
nal voltage exceeds about 4.6V, the output MOS FET is turned OFF. (Drain)
No.3 pin : Input pin. The signal from the logic is inputted to drive the device. When this is open, the output MOS FET turns
OFF.
■
Electrical Characteristics (Ta= 25˚C)
Parameter
Symbol
RDS (ON)
VDS (ON)
VDSS
Condition
VIN = 5V, IO=1.5A
Min
40
Typ
Max
0.5
Unit
Ω
Drain-Source ON-resistance
Drain voltage
VIN = 5V, IO=1.5A
IDSS = 3mA
0.75
V
Drain breakdown voltage
Drain leakage current (1)
Drain leakage current (2)
V
IDSS (1)
IDSS (2)
VIN (H)
VIN (L)
IOCP
VDSS = 40V
3.0
1.5
6.0
0.8
mA
mA
V
VDSS = 25V
4.5
5.0
Input voltage
V
Over-current protection
Reset voltage
VIN = 5V
5.0
4.6
A
VRESET
IIN (opr)
VIN = 5V
V
Input current
VIN = 5V, VDS =1V
1.0
mA
Intelligent Power Devices (IPDs)
MIP501, MIP502
VDSS – Ta
IDSS – Ta
100
5
4
3
2
1
80
MIP502
60
40
20
0
MIP501
0
-50
0
50
100
-50
0
50
100
Ambient temperature Ta (˚C)
Ambient temperature Ta (˚C)
Is – Ta
IIN –VIN
10
100
8
6
4
2
VDS=3V
50
VDS=2V
0
0
-50
0
50
100
4
5
6
Ambient temperature Ta (˚C)
Input voltage VIN (V)
Ron – Ta
PD – Ta
2.0
0.6
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0.4
0.2
0
MIP501
MIP502
-50
0
50
100
Ambient temperature Ta (˚C)
0
40
80
120
160
IIN – Ta
Ambient temperature Ta (˚C)
100
80
60
40
20
0
-50
0
50
100
Ambient temperature Ta (˚C)
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