MIP516 [PANASONIC]
Silicon MOSFET type integrated circuit; 硅MOSFET型集成电路
| 型号： | MIP516 |
| 厂家： | 
PANASONIC |
| 描述： | Silicon MOSFET type integrated circuit |
| 文件： | 总3页 (文件大小：65K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Intelligent Power Devices (IPDs)
MIP516
Silicon MOSFET type integrated circuit
■ Features
Unit : mm
+0.20
–0.05
1.9 0.1
0.95 0.95
2.90
• Built-in five protection functions. (over-current, over-voltage, load-
short-circuit, over heat, ESD)
+0.10
–0.06
0.16
Driving directly from CMOS (microcomputer) is possible.
It is exchangeable easily from a bipolar transistor and MOSFET
The miniaturized package equipped with three terminals was
adapted.
•
•
•
4
3
5
6
2
1
+0.10
–0.05
0.30
0.50
■ Applications
+0.10
–0.05
•
•
Lamp-Solenoid, driver
Motor driver
10°
1 : Drain
2 : Drain
3 : Source
4 : In
5 : Drain
6 : Drain
■ Absolute Maximum Ratings TC = 25°C 3°C
Parameter
Drain-source voltage
Output current
Symbol
VDS
IO
Rating
Unit
V
− 0.5 to +45
1.0
A
Mini6-G1 Package
Input voltage
VIN
IIN
− 0.5 to +6.0
V
Marking Symbol: MB
Input current
2
13
mA
mJ
W
1
Drain clamp energy endurance *
ECLP
PD1
2
Power dissipation 1 *
0.2
3
Power dissipation 2 *
PD2
0.8
W
Operating ambient temperature
Channel temperature
Topr
Tch
−40 to +85
150
°C
°C
°C
Storage temperature
Tstg
−55 to +150
Note) 1: L = 10 mH, I = 1.61 A, VDD = 20 V, 1 pulse, TC = 25°C
*
L
2: Single unit
*
*3: Mounting on the PCB (40 mm2, thickness 1.7mm glass epoxy
substrate) (Ta = 25°C)
■ Block Diagram
Drain
Over-current
protection
Load short-circuit
protection
Gate cutoff
circuit
In
Over-heat
protection
Over-voltage
protection
ESD protection
Source
Publication date: August 2003
SLB00059AED
1
MIP516
■ Electrical Characteristics TC = 25°C 3°C
Parameter
Symbol
RDS(on)
VDS(on)
VDS(CLP)
IDS(off)1
IDS(off)2
IDS(off)3
VIN(H)
Conditions
VIN = 5 V, IDS = 1 A
Min
Typ
0.70
0.70
52
Max
0.90
0.90
Unit
Ω
Drain-source ON resistance
Drain-source voltage
VIN = 5 V, IDS = 1 A
VIN = 0 V, IDS = 3 mA
VIN = 0 V, VDS = 12 V
VIN = 0 V, VDS = 25 V
VIN = 0 V, VDS = 40 V
IDS = 0.5 A
V
Drain clamp voltage
45
V
Drain-source cutoff current 1
Drain-source cutoff current 2
Drain-source cutoff current 3
Input voltage high-level
0.01
0.02
5.00
8.00
µA
0.08 10.00
4
V
V
Input voltage low-level
VIN(L)
IDS = 1 mA
0.80
Input current (normal)
IIN(on)
VIN = 5 V, VDS = 0 V
VIN = 5 V
0.3
0.75
1.7
0.5
mA
mA
A
Input current (act on protection) *
Over current protection limit
Short circuit load protection limit
Input voltage of act on protection
IIN(PROT)
IOCP
VDS(SHT)
VIN(PROT)
1.10
VIN = 5 V
1.1
1.0
4.0
VIN = 5 V
1.6
V
6.0
V
Note) 1. At on-state when drain voltage exceeds the "Short circuit load protection voltage", output current begin to oscillate.
2. When drain voltage exceeds the "drain clamp voltage" output MOS turn on, so drain voltage are clamped before the
drain-source junction become breakdown
3. : State of short circuit laod protection and over heat protection (designed guarantee).
*
SLB00059AED
2
Request for your special attention and precautions in using the technical information
and semiconductors described in this material
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government
if any of the products or technologies described in this material and controlled under the "Foreign
Exchange and Foreign Trade Law" is to be exported or taken out of Japan.
(2) The technical information described in this material is limited to showing representative characteris-
tics and applied circuits examples of the products. It neither warrants non-infringement of intellec-
tual property right or any other rights owned by our company or a third party, nor grants any license.
(3) We are not liable for the infringement of rights owned by a third party arising out of the use of the
product or technologies as described in this material.
(4) The products described in this material are intended to be used for standard applications or general
electronic equipment (such as office equipment, communications equipment, measuring instru-
ments and household appliances).
Consult our sales staff in advance for information on the following applications:
• Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment,
combustion equipment, life support systems and safety devices) in which exceptional quality and
reliability are required, or if the failure or malfunction of the products may directly jeopardize life or
harm the human body.
• Any applications other than the standard applications intended.
(5) The products and product specifications described in this material are subject to change without
notice for modification and/or improvement. At the final stage of your design, purchasing, or use of
the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that
the latest specifications satisfy your requirements.
(6) When designing your equipment, comply with the guaranteed values, in particular those of maxi-
mum rating, the range of operating power supply voltage, and heat radiation characteristics. Other-
wise, we will not be liable for any defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of
incidence of break down and failure mode, possible to occur to semiconductor products. Measures
on the systems such as redundant design, arresting the spread of fire or preventing glitch are
recommended in order to prevent physical injury, fire, social damages, for example, by using the
products.
(7) When using products for which damp-proof packing is required, observe the conditions (including
shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets
are individually exchanged.
(8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written
permission of Matsushita Electric Industrial Co., Ltd.
2002 JUL
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