MA3J742 [PANASONIC]
Schottky Barrier Diodes (SBD); 肖特基势垒二极管（ SBD ）
| 型号： | MA3J742 |
| 厂家： | 
PANASONIC |
| 描述： | Schottky Barrier Diodes (SBD) |
| 文件： | 总4页 (文件大小：73K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Schottky Barrier Diodes (SBD)
MA3J742 (MA742)
Silicon epitaxial planar type
Unit: mm
+0.1
–0
+0.1
For switching
0.3
0.15
–0.05
3
I Features
•
Two MA3X716 (MA716) is contained in one package (series
connection)
1
2
(0.65)(0.65)
•
•
0.9 0.1
Low forward voltage VF , optimum for low voltage rectification
Optimum for high frequency rectification because of its short
reverse recovery time (trr)
1.3 0.1
2.0 0.2
5°
•
S-Mini type 3-pin package
I Absolute Maximum Ratings Ta = 25°C
Parameter
Reverse voltage (DC)
Peak reverse voltage
Forward current (DC) Single
Series *
Symbol
VR
Rating
Unit
V
1 : Anode 1
2 : Cathode 2
3 : Cathode 1
Anode 2
30
VRM
IF
30
30
V
SMini3-F1 Package
mA
Marking Symbol: M1U
ꢀ
ꢀ
20
Peak forward current Single
Series *
IFM
150
mA
Internal Connection
110
3
Junction temperature
Storage temperature
Tj
125
°C
°C
Tstg
−55 to +125
Note) : Value per chip
*
1
2
I Electrical Characteristics Ta = 25°C
Parameter
Reverse current (DC)
Forward voltage (DC)
Symbol
IR
Conditions
Min
Typ
Max
1
Unit
µA
V
VR = 30 V
IF = 1 mA
VF1
VF2
Ct
0.4
1
IF = 30 mA
Terminal capacitance
Reverse recovery time *
VR = 1 V, f = 1 MHz
1.5
1
pF
ns
trr
IF = IR = 10 mA
Irr = 1 mA, RL = 100 Ω
Detection efficiency
h
Vin = 3 V(peak) , f = 30 MHz
RL = 3.9 kΩ, CL = 10 pF
65
%
Note) 1. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body
and the leakage of current from the operating equipment.
ꢀ
2. Rated input/output frequency: 2 GHz
3. : trr measuring instrument
*
Bias Application Unit N-50BU
Input Pulse
Output Pulse
trr
tp
tr
t
10%
IF
t
A
90%
VR
Irr = 1 mA
tp = 2 µs
tr = 0.35 ns
δ = 0.05
IF = 10 mA
IR = 10 mA
RL = 100 Ω
Pulse Generator
(PG-10N)
Wave Form Analyzer
(SAS-8130)
Rs = 50 Ω
Ri = 50 Ω
Note) The part number in the parenthesis shows conventional part number.
Publication date: August 2001
SKH00056AED
1
MA3J742
IF VF
IR VR
VF Ta
103
102
10
103
102
10
1.0
0.8
0.6
0.4
0.2
0
75°C 25°C
−20°C
Ta = 125°C
75°C
Ta = 125°C
IF = 30 mA
1
1
3 mA
1 mA
25°C
10−1
10−2
10−1
10−2
0
0.2
0.4
0.6
0.8
1.0
1.2
0
5
10
15
20
25
30
−40
0
40
80
120
160
( )
V
( )
V
(
)
Forward voltage VF
Reverse voltage VR
Ambient temperature Ta °C
IR Ta
Ct VR
103
102
10
2.4
2.0
1.6
1.2
0.8
0.4
0
f = 1 MHz
Ta = 25°C
VR = 30 V
15 V
1
10−1
10−2
0
5
10
15
20
25
30
−40
0
40
80
120 160 200
( )
Reverse voltage VR V
(
)
Ambient temperature Ta °C
SKH00056AED
2
Request for your special attention and precautions in using the technical information
and semiconductors described in this material
(1) An export permit needs to be obtained from the competent authorities of the Japanese Govern-
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A. These materials are intended as a reference to assist customers with the selection of Panasonic
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Due to modification or other reasons, any information contained in this material, such as available
product types, technical data, and so on, is subject to change without notice.
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2001 MAR
This datasheet has been download from:
www.datasheetcatalog.com
Datasheets for electronics components.
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PANASONIC
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