MA3S132D [PANASONIC]
Silicon epitaxial planar type; 硅外延平面型
| 型号： | MA3S132D |
| 厂家： | 
PANASONIC |
| 描述： | Silicon epitaxial planar type |
| 文件： | 总2页 (文件大小：50K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Switching Diodes
MA3S132D
Silicon epitaxial planar type
Unit : mm
1.60 ± ±0.1
0.80 ± ±0.05
0.80
For switching circuits
1
2
I Features
•
•
•
3
Short reverse recovery time trr
Small terminal capacitance, Ct
Super-small SS-mini type package contained two elements, allow-
ing high-density mounting
I Absolute Maximum Ratings Ta = 25°C
Parameter
Reverse voltage (DC)
Peak reverse voltage
Symbol
VR
Rating
80
Unit
V
0.44
0.44
0.88 −+±±00..0035
1 : Cathode 1
2 : Cathode 2
3 : Anode 1
Anode 2
VRM
IF
80
V
Single
Double
Single
Double
Single
Double
100
Forward current
(DC)
mA
150
SS-Mini Type Package (3-pin)
IFM
225
Peak forward
current
mA
mA
Marking Symbol: MO
Internal Connection
340
IFSM
500
Non-repetitive peak
forward surge current
*
750
Junction temperature
Storage temperature
Tj
150
°C
°C
1
2
Tstg
−55 to +150
3
Note)
* : t = 1 s
I Electrical Characteristics Ta = 25°C
Parameter
Reverse current (DC)
Forward voltage (DC)
Reverse voltage (DC)
Terminal capacitance
Reverse recovery time*
Symbol
IR
Conditions
Min
80
Typ
Max
100
1.2
Unit
nA
V
VR = 75 V
VF
IF = 100 mA
IR = 100 µA
VR
V
Ct
VR = 0 V, f = 1 MHz
15
10
pF
ns
trr
IF = 10 mA, VR = 6 V
Irr = 0.1 · IR, RL = 100 Ω
Note) 1. Rated input/output frequency: 100 MHz
2. * : trr measuring circuit
Bias Application Unit N-50BU
Input Pulse
tp
Output Pulse
trr
tr
t
10%
IF
t
A
90%
VR
Irr = 0.1 · IR
tp = 2 µs
tr = 0.35 ns
δ = 0.05
IF = 10 mA
VR = 6 V
RL = 100 Ω
Pulse Generator
(PG-10N)
Rs = 50 Ω
W.F.Analyzer
(SAS-8130)
Ri = 50 Ω
1
MA3S132D
Switching Diodes
IF VF
VF Ta
IR VR
3
10
104
103
102
10
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
Ta±=±150°C
2
10
100°C
25°C
10
1
Ta±=±150°C
100°C
IF = 100 mA
10 mA
3 mA
25°C
−1
−2
−±20°C
10
10
1
10−1
0
0.2
0.4
0.6
0.8
1.0
1.2
0
20
40
60
80
100 120
−40
0
40
80
120 160 200
(
)
( )
Reverse voltage VR V
Forward voltage VF
V
(
)
Ambient temperature Ta °C
IR Ta
Ct VR
IF(surge) tW
4
10
8
7
6
5
4
3
2
1
0
1 000
Ta±=±25°C
f = 1 MHz
Ta = 25°C
VR = 75 V
35 V
IF(surge)
300
100
tW
Non repetitive
3
2
10
10
6 V
30
10
10
3
1
1
0.3
0.1
−1
−40
10
0
40
80
120 160 200
0
20
40
60
80
100 120
0.03 0.1 0.3
1
3
10
30
(
)
( )
Reverse voltage VR V
(
)
Ambient temperature Ta °C
Pulse width tW ms
2
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