MA3S132DG [PANASONIC]
Mixer Diode, Very High Frequency, Silicon, ROHS COMPLIANT, SSMINI3-F3, 3 PIN;
| 型号： | MA3S132DG |
| 厂家： | 
PANASONIC |
| 描述： | Mixer Diode, Very High Frequency, Silicon, ROHS COMPLIANT, SSMINI3-F3, 3 PIN 光电二极管 |
| 文件： | 总5页 (文件大小：228K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
This product complies with the RoHS Directive (EU 2002/95/EC).
Switching Diodes
MA3S132DG, MA3S132EG
Silicon epitaxial planar type
For switching circuits
Package
■ Features
•
Cde
SSMini3-F
Pin Na
MA3S1
• Short reverse recovery time trr
• Small terminal capacitance Ct
• Two isolated elements contained in one package, allowing gh-
density mounting
•
MA3S132EG
ode 1
atho2
3: Anode
1: Anode 1
2: Anode 2
3: Cathode
■ Absolute Maximum Ratings Ta = 25°C
Parameter
Reverse voltage
Maximum peak reverse voltage
Symbol
VR
Rati
8
Unit
V
■ Marking Symbol
VR
I
0
V
MA3S132DG: MO
MA3S132EG: MU
Single
Double
Sle
Doubl
Sigle
Doubl
100
A
Forward current
15
IFM
225
A
mA
Peak forward
current
■ Internal Connection
34
3
3
IFSM
500
Non-repetitive peak
forward surge curren
*
50
Junction tempature
Storae teperatue
T
150
°C
°C
Tst
to +150
1
2
1
2
E
D
Note) : t
*
■ Elctrical Characteristics Ta = 25°C 3°C
Paraeter
Forw
Symbol
Conditions
IF = 100 mA
Min
Typ
Max
Unit
V
VF
VR
IR
1.2
R
IR = 100 µA
VR = 75 V
80
V
Rever
100
15
2
nA
pF
Terminal citance
MA3S132DG
MA3S132EG
Ct
VR = V, f = 1 MHz
Reverse recovery time * MA3S132DG
MA3S132EG
trr
IF = 10 mA, VR = 6 V
Irr = 0.1 IR , RL = 100 Ω
10
3
ns
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. Absolute frequency of input and output is 100 MHz.
3. : trr measurement circuit
*
Bias Application Unit (N-50BU)
Input Pulse
tp
Output Pulse
trr
tr
t
10%
IF
t
A
90%
VR
Irr = 0.1 IR
tp = 2 µs
tr = 0.35 ns
δ = 0.05
IF = 10 mA
VR = 6 V
RL = 100 Ω
Pulse Generator
(PG-10N)
Wave Form Analyzer
(SAS-8130)
Rs = 50 Ω
Ri = 50 Ω
Publication date: October 2007
SKF00083AED
1
This product complies with the RoHS Directive (EU 2002/95/EC).
MA3S132DG, MA3S132EG
Characteristics charts of MA3S132DG
IF VF
IR VR
VF Ta
104
103
102
10
103
1.6
1.2
0.8
0.4
0
Ta = 150°C
102
10
100°C
25°C
IF = 100 mA
Ta = 150°C
1
100°C
25°C
10 mA
3 mA
10 −1
−20°C
1
10 −1
10 −2
0
20
40
60
80
100 120
−40
0
40
80
120 160 200
0
0.2
0.4
0.6
0.8
1.0
1.2
(
)
V
Reverse voltage VR
(
)
(
)
V
Ambient temperature Ta °C
Forward voltage VF
IR Ta
Ct VR
IF(surge) tW
103
102
10
104
103
102
10
8
6
4
2
0
f = 1 MHz
Ta = 25°C
Ta = 25°C
VR = 75 V
IF(surge)
tW
35 V
6 V
Non repetitive
1
1
10 −1
10 −1
−40
10 −1
Pulse width tW ms
1
10
0
20
40
60
80
100 120
0
40
80
120 160 200
(
)
V
Reverse voltage VR
(
)
(
)
Ambient temperature Ta °C
SKF00083AED
3
This product complies with the RoHS Directive (EU 2002/95/EC).
MA3S132DG, MA3S132EG
Characteristics charts of MA3S132EG
IF VF
103
102
10
IR VR
VF Ta
105
104
103
102
10
1.6
1.2
0.8
0.4
0
Ta = 150°C
100°C
IF = 100 mA
Ta = 150°C
100°C
1
10 mA
3 mA
25°C
25°C
10 −1
−20°C
10 −2
1
−40
0
40
80
120 160 200
0
20
40
60
80
100 120
0
0.2
0.4
0.6
0.8
1.0
1.2
(
)
Ambient temperature Ta °C
(
)
V
(
)
V
Reverse voltage VR
Forward voltage VF
IR Ta
Ct VR
IF(surge) tW
1.2
1.0
0.8
0.6
0.4
0.2
0
103
102
10
105
104
103
102
10
Ta = 25°C
VR = 75 V
f = 1 MHz
Ta = 25°C
IF(surge)
35 V
6 V
tW
Non repetitive
1
10 −1
1
−40
0
20
40
60
80
100 120
10 −1
)
Pulse width tW ms
1
10
0
40
80
120 160 200
( )
Reverse voltage VR V
(
(
)
Ambient temperature Ta °C
SKF00083AED
3
This product complies with the RoHS Directive (EU 2002/95/EC).
MA3S132DG, MA3S132EG
SSMini3-F3
Unit: mm
1.60 +0.05
0.26 +0.05
−0.03
−
0.02
3
1
2
0.13 +0.05
−0.02
(0.50)
(0.50)
1.00 0.05
(5°)
SKF00083AED
4
Request for your special attention and precautions in using the technical information and
semiconductors described in this book
(1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
regulations of the exporting country, especially, those with regard to security export control, must be observed.
(2) The technical information described in this book is intended only to show the main characteristics and application circuit examples
of the products, and no license is granted under any intellectual property right or other right owned by our company or any other
company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other
company which may arise as a result of the use of technical information described in this book.
(3) The products described in this book are intended to be used for standard applications or general electronic equipment (such as office
equipment, communications equipment, measuring instruments and household appliances).
Consult our sales staff in advance for information on the following applications:
– Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support
systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the prod-
ucts may directly jeopardize life or harm the human body.
– Any applications other than the standard applications intended.
(4) The products and product specifications described in this book are subject to change without notice for modification and/or im-
provement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product
Standards in advance to make sure that the latest specifications satisfy your requirements.
(5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions
(operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute
maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any
defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure
mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire
or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products.
(6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS,
thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. When using products for which
damp-proof packing is required, satisfy the conditions, such as shelf life and the elapsed time since first opening the packages.
(7) This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita
Electric Industrial Co., Ltd.
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