MA3J741EG [PANASONIC]
Mixer Diode, L Band, Silicon, ROHS COMPLIANT, SMINI3-F2, 3 PIN;型号: | MA3J741EG |
厂家: | PANASONIC |
描述: | Mixer Diode, L Band, Silicon, ROHS COMPLIANT, SMINI3-F2, 3 PIN 微波混频二极管 光电二极管 |
文件: | 总2页 (文件大小:47K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
Schottky Barrier Diodes (SBD)
MA3J741
Silicon epitaxial planar type
Unit : mm
2.1 0.1
For switching circuits
0.425
1.25 0.1
0.425
I Features
1
2
•
•
S-mini type package (3-pin) of MA3X704A
Low forward rise voltage (VF) and satisfactory wave detection
efficiency (η)
3
•
•
Small temperature coefficient of forward characteristic
Extremely low reverse current IR
I Absolute Maximum Ratings Ta = 25°C
Parameter
Reverse voltage (DC)
Peak reverse voltage
Forward current (DC)
Peak forward current
Junction temperature
Storage temperature
Symbol
Rating
Unit
V
1 : Anode
2 : NC
3 : Cathode
EIAJ : SC-70
VR
30
VRM
IF
30
30
V
mA
mA
°C
Flat S-Mini Type Package (3-pin)
IFM
150
Marking Symbol: M1L
Internal Connection
Tj
125
Tstg
−55 to +125
°C
1
2
3
I Electrical Characteristics Ta = 25°C
Parameter
Reverse current (DC)
Forward voltage (DC)
Symbol
IR
Conditions
Min
Typ
Max
300
0.4
1
Unit
nA
V
VR = 30 V
IF = 1 mA
VF1
VF2
Ct
IF = 30 mA
V
Terminal capacitance
Reverse recovery time*
VR = 1 V, f = 1 MHz
1.5
1
pF
ns
trr
IF = IR = 10 mA
Irr = 1 mA, RL = 100 Ω
Detection efficiency
η
Vin = 3 V(peak), f = 30 MHz
65
%
RL = 3.9 kΩ, CL = 10 pF
Note) 1. Schottky barrier diode is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a
human body and the leakage of current from the operating equipment.
ꢀ
2. Rated input/output frequency: 2 000 MHz
3. * : trr measuring instrument
Bias Application Unit N-50BU
Input Pulse
tp
Output Pulse
trr
tr
t
10%
IF
t
A
90%
VR
Irr = 1 mA
tp = 2 µs
tr = 0.35 ns
δ = 0.05
IF = 10 mA
IR = 10 mA
RL = 100 Ω
Pulse Generator
(PG-10N)
Rs = 50 Ω
W.F.Analyzer
(SAS-8130)
Ri = 50 Ω
1
MA3J741
Schottky Barrier Diodes (SBD)
IF VF
IR VR
VF Ta
3
3
10
10
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
75°C 25°C
− 20°C
2
2
10
10
Ta = 125°C
Ta = 125°C
IF = 30 mA
10
1
10
75°C
25°C
10 mA
1
1 mA
−1
−1
10
10
−2
−2
10
10
0
0.2
0.4
0.6
0.8
1.0
1.2
0
5
10
15
20
25
30
−40
0
40
80
120
160
(
)
( )
Reverse voltage VR V
Forward voltage VF
V
(
)
Ambient temperature Ta °C
Ct VR
IR Ta
2
3
2
1
0
10
VR = 30 V
15 V
f = 1 MHz
°C
Ta = 25
10
1
−1
10
−2
−40
10
0
5
10
15
20
25
30
0
40
80
120 160 200
(
)
V
(
)
Reverse voltage VR
Ambient temperature Ta °C
2
相关型号:
MA3J7440G
Rectifier Diode, Schottky, 1 Element, 0.2A, 30V V(RRM), Silicon, ROHS COMPLIANT, SMINI3-F2, 3 PIN
PANASONIC
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