MA3J741D [PANASONIC]
Silicon epitaxial planar type; 硅外延平面型
| 型号： | MA3J741D |
| 厂家： | 
PANASONIC |
| 描述： | Silicon epitaxial planar type |
| 文件： | 总2页 (文件大小：49K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Schottky Barrier Diodes (SBD)
MA3J741D, MA3J741E
Silicon epitaxial planar type
Unit : mm
For switching circuits
2.1 0.1
0.425
1.25 0.1
0.425
I Features
1
2
•
•
Two MA3J741s are contained in one package (S-mini type 3-pin)
Low forward rise voltage (VF) and satisfactory wave detection
efficiency (η)
3
•
•
Small temperature coefficient of forward characteristic
Extremely low reverse current IR
I Absolute Maximum Ratings Ta = 25°C
Parameter
Reverse voltage (DC)
Peak reverse voltage
Symbol
VR
Rating
Unit
V
30
MA3J741D MA3J741E
Cathode 1 Anode 1
Cathode 2 Anode 2
Anode 1,2 Cathode 1,2
VRM
IF
30
30
V
EIAJ : SC-70
Flat S-Mini Type Package
(3-pin)
1
2
3
Single
mA
Forward current
(DC)
Double*ꢀ
Single
20
Marking Symbol
MA3J741D : M2P
MA3J741E : M2R
IFM
150
mA
Peak forward
current
•
•
Double*
110
Junction temperature
Storage temperature
Tj
125
°C
°C
Internal Connection
Tstg
−55 to +125
1
1
3
2
Note)
* : Value per hcip
3
2
D
E
I Electrical Characteristics Ta = 25°C
Parameter
Reverse current (DC)
Forward voltage (DC)
Symbol
IR
Conditions
Min
Typ
Max
1
Unit
µA
V
VR = 30 V
IF = 1 mA
VF1
VF2
Ct
0.4
1
IF = 30 mA
V
Terminal capacitance
Reverse recovery time*
VR = 1 V, f = 1 MHz
1.5
1
pF
ns
trr
IF = IR = 10 mA
Irr = 1 mA, RL = 100 Ω
Detection efficiency
η
Vin = 3 V(peak), f = 30 MHz
65
%
RL = 3.9 kΩ, CL = 10 pF
Note) 1. Schottky barrier diode is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a
human body and the leakage of current from the operating equipment.
ꢀ
2. Rated input/output frequency: 2 000 MHz
3. * : trr measuring instrument
Bias Application Unit N-50BU
Input Pulse
tp
Output Pulse
trr
tr
t
10%
IF
t
A
90%
VR
Irr = 1 mA
tp = 2 µs
tr = 0.35 ns
δ = 0.05
IF = 10 mA
IR = 10 mA
RL = 100 Ω
Pulse Generator
(PG-10N)
Rs = 50 Ω
W.F.Analyzer
(SAS-8130)
Ri = 50 Ω
1
MA3J741D, MA3J741E
Schottky Barrier Diodes (SBD)
IF VF
IR VR
VF Ta
3
3
10
10
1.0
0.8
0.6
0.4
0.2
0
75°C 25°C
Ta = 125°C
2
2
10
10
Ta = 125°C
– 20°C
IF = 30 mA
75°C
25°C
10
10
10 mA
1
1
−1
−1
10
10
1 mA
−2
−2
10
10
0
0.2
0.4
0.6
0.8
1.0
1.2
0
5
10
( )
Reverse voltage VR V
15
20
25
30
−40
0
40
80
120 160 200
(
)
Forward voltage VF
V
(
)
Ambient temperature Ta °C
Ct VR
IR Ta
3
2
3
10
10
f = 1 MHz
Ta = 25°C
VR = 30 V
3 V
1 V
2
1
0
10
1
−1
10
−2
10
0
5
10
15
20
25
30
−40
0
40
80
120 160 200
(
)
Reverse voltage VR
V
(
)
Ambient temperature Ta °C
2
相关型号：
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Rectifier Diode, Schottky, 1 Element, 0.2A, 30V V(RRM), Silicon, ROHS COMPLIANT, SMINI3-F2, 3 PIN
PANASONIC
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