MA2SD032 [PANASONIC]

Schottky Barrier Diodes (SBD) Silicon epitaxial planar type; 肖特基势垒二极管( SBD )硅外延平面型
MA2SD032
型号: MA2SD032
厂家: PANASONIC    PANASONIC
描述:

Schottky Barrier Diodes (SBD) Silicon epitaxial planar type
肖特基势垒二极管( SBD )硅外延平面型

二极管
文件: 总3页 (文件大小:78K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
Schottky Barrier Diodes (SBD)  
MA2SD32  
Silicon epitaxial planar type  
Unit: mm  
+0.05  
–0.03  
0.60  
For super high speed switching  
+0.05  
+0.05  
–0.03  
0.12  
–0.02  
0.80  
1
Features  
IF(AV) = 200 mA rectification is possible.  
Small reverse current: IR < 5 µA (at VR = 30 V)  
0.01 0.01  
2
0.30 0.05  
+0  
Absolute Maximum Ratings Ta = 25°C  
0
–0.05  
5˚  
Parameter  
Reverse voltage  
Symbol  
VR  
Rating  
30  
Unit  
V
Repetitive peak reverse voltage  
Forward current (Average)  
Peak forward current  
VRRM  
IF(AV)  
IFM  
30  
V
200  
300  
1
mA  
mA  
A
Non-repetitive peak forward  
surge current *  
IFSM  
1: Anode  
2: Cathode  
SSMini2-F1 Package  
Junction temperature  
Storage temperature  
Tj  
125  
°C  
°C  
Tstg  
55 to +125  
Marking Symbol: 8H  
Note)  
: The peak-to-peak value in one cycle of 50 Hz sine wave (non-repetitive)  
*
Electrical Characteristics Ta = 25°C 3°C  
Parameter  
Reverse current  
Symbol  
IR1  
Conditions  
Min  
Typ  
Max  
0.5  
5
Unit  
VR = 10 V  
µA  
IR2  
VR = 30 V  
Forward voltage  
VF  
IF = 200 mA  
VR = 0 V, f = 1 MHz  
0.49  
25  
2
0.56  
V
pF  
ns  
Terminal capacitance  
Reverse recovery time *  
Ct  
trr  
IF = IR = 100 mA  
Irr = 10 mA, RL = 100 Ω  
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.  
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body  
and the leakage of current from the operating equipment.  
3. Absolute frequency of input and output is 250 MHz  
4. : trr measurement circuit  
*
Bias Application Unit (N-50BU)  
Input Pulse  
tp  
Output Pulse  
trr  
tr  
t
10%  
IF  
t
Pulse Generator  
(PG-10N)  
Rs = 50 Ω  
Wave Form  
Analyzer  
(SAS-8130)  
Ri = 50 Ω  
A
90%  
VR  
Irr = 10 mA  
tp = 2 µs  
tr = 0.35 ns  
δ = 0.05  
IF = 100 mA  
IR = 100 mA  
RL = 100 Ω  
Publication date: October 2003  
SKH00132AED  
1
MA2SD32  
IF VF  
IR VR  
Ct VR  
103  
102  
25  
20  
15  
10  
5
103  
Ta = 25°C  
Ta = 125°C  
Ta = 125°C  
75°C  
102  
10  
25°C  
75°C  
25°C  
10  
1
1
25°C  
101  
103  
102  
102  
103  
1
0
5
10  
15  
20  
25  
30  
0
0.1  
0.2  
0.3  
0.4  
0.5  
0.6  
0
5
10  
15  
20  
25  
30  
Reverse voltage VR (V)  
Forward voltage VF (V)  
Reverse voltage VR (V)  
SKH00132AED  
2
Request for your special attention and precautions in using the technical information  
and semiconductors described in this material  
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of  
the products or technical information described in this material and controlled under the "Foreign Exchange  
and Foreign Trade Law" is to be exported or taken out of Japan.  
(2) The technical information described in this material is limited to showing representative characteristics and  
applied circuits examples of the products. It neither warrants non-infringement of intellectual property right  
or any other rights owned by our company or a third party, nor grants any license.  
(3) We are not liable for the infringement of rights owned by a third party arising out of the use of the technical  
information as described in this material.  
(4) The products described in this material are intended to be used for standard applications or general elec-  
tronic equipment (such as office equipment, communications equipment, measuring instruments and house-  
hold appliances).  
Consult our sales staff in advance for information on the following applications:  
Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combus-  
tion equipment, life support systems and safety devices) in which exceptional quality and reliability are  
required, or if the failure or malfunction of the products may directly jeopardize life or harm the human  
body.  
Any applications other than the standard applications intended.  
(5) The products and product specifications described in this material are subject to change without notice for  
modification and/or improvement. At the final stage of your design, purchasing, or use of the products,  
therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifica-  
tions satisfy your requirements.  
(6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rat-  
ing, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not  
be liable for any defect which may arise later in your equipment.  
Even when the products are used within the guaranteed values, take into the consideration of incidence of  
break down and failure mode, possible to occur to semiconductor products. Measures on the systems such  
as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent  
physical injury, fire, social damages, for example, by using the products.  
(7) When using products for which damp-proof packing is required, observe the conditions (including shelf life  
and amount of time let standing of unsealed items) agreed upon when specification sheets are individually  
exchanged.  
(8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written  
permission of Matsushita Electric Industrial Co., Ltd.  
2003 SEP  

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