MA2SD10 [PANASONIC]
Silicon epitaxial planar type; 硅外延平面型
| 型号： | MA2SD10 |
| 厂家： | 
PANASONIC |
| 描述： | Silicon epitaxial planar type |
| 文件： | 总2页 (文件大小：41K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Schottky Barrier Diodes (SBD)
MA2SD10
Silicon epitaxial planar type
Unit : mm
0.80 0.05
0.80
For super-high speed switching circuit
ꢀ Features
•
•
•
•
Sealed in the super small SS-mini type 2-pin package
Allowing to rectify under (IF(AV) = 200 mA) condition
Low forward rise voltage VF
2
1
0.60
0.60
Allowing high-density mounting
ꢀ Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol
VR
Rating
Unit
V
1.20 −+ 00..0035
Reverse voltage (DC)
Repetitive peak reverse voltage
20
20
1
1.60 0.05
VRRM
IFSM
V
1 : Anode
2 : Cathode
Non-repetitive peak forward
surge current*
A
SS-Mini Type Package (2-pin)
Peak forward current
Average forward current
Junction temperature
Storage temperature
IFM
IF(AV)
Tj
300
200
mA
mA
°C
Marking Symbol: 2L
Internal Connection
125
Tstg
−55 to +125
°C
Note)
*
: The peak-to-peak value in one cycle of 50 Hz sine-wave
(non-repetitive)
2
1
ꢀ Electrical Characteristics Ta = 25°C 3°C
Parameter
Reverse current (DC)
Forward voltage (DC)
Symbol
IR
Conditions
Min
Typ
Max
Unit
µA
V
VR = 10 V
IF = 5 mA
20
VF1
VF2
Ct
0.27
0.47
IF = 200 mA
V
Terminal capacitance
VR = 0 V, f = 1 MHz
40
pF
Note) 1. Schottky barrier diode is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of
a human body and the leakage of current from the operating equipment.
2. Rated input/output frequency: 250 MHz
1
MA2SD10
Schottky Barrier Diodes (SBD)
IF VF
IR VR
−1
−2
−3
−4
−5
−6
10
10
10
10
10
10
1
−1
10
Ta = 125°C
Ta = 125°C
−2
10
75°C
−3
10
75°C
25°C
25°C
−4
−5
−6
− 20°C
10
10
10
0
0.1
0.2
0.3
0.4
0.5
0.6
0
5
10
( )
Reverse voltage VR V
15
20
25
30
(
)
Forward voltage VF
V
2
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