MA2SD290G [PANASONIC]
Rectifier Diode, Schottky, 1 Element, 0.1A, 30V V(RRM), Silicon, ROHS COMPLIANT, SSMINI2-F4, 2 PIN;
| 型号： | MA2SD290G |
| 厂家： | 
PANASONIC |
| 描述： | Rectifier Diode, Schottky, 1 Element, 0.1A, 30V V(RRM), Silicon, ROHS COMPLIANT, SSMINI2-F4, 2 PIN 光电二极管 |
| 文件： | 总3页 (文件大小：229K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
This product complies with the RoHS Directive (EU 2002/95/EC).
Schottky Barrier Diodes (SBD)
MA2SD29
Silicon epitaxial planar type
Unit: mm
+0.05
–0.03
0.60
For super high speed switching
+0.05
+0.05
–0.03
0.12
–0.02
0.80
1
■ Features
• Low forward voltage: VF < 0.42 V (at IF = 100 mA)
• Optimum for high frequency rectification because of its short
reverse recovery time trr .
0.01 0.01
.05
+0
0
–0.05
■ Absolute Maximum Ratings Ta = 25°C
Parameter
Reverse voltage
Symbol
VR
Ratig
3
Unit
V
Repetitive peak reverse voltage
Forward current (Average)
VRR
IF(AV
V
00
200
1
mA
mA
A
Peak forward current
Non-repetitive peak forard
surge current *
1: Anode
2: Cathode
SSMini2-F1 Package
IFSM
Junction temperatur
Storage temperatur
Tj
125
°C
°C
Marking Symbol: 8M
Tstg
−5to +125
Note)
: The peak-topeak alue in one cycline ave (non-repetitive)
*
■ Electricharacteristis Ta = 25°C 3°C
Parameter
Revee current
Symbol
IR1
Conditions
Min
Typ
Max
25
Unit
VR = 10 V
µA
IR2
VR = 30 V
120
0.29
0.42
Forwar
VF1
VF2
Ct
IF = 10 mA
0.25
0.39
11
V
IF = 100 mA
VR = 0 V, f = 1 MHz
Terminal capace
Reverse recovery time *
pF
ns
trr
IF = IR = 100 mA
1
Irr = 10 mA, RL = 100 Ω
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. This producis sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body
and the leakage of current from the operating equipment.
3. Absolute frequency of input and output is 250 MHz
4. : trr measurement circuit
*
Bias Application Unit (N-50BU)
Input Pulse
tp
Output Pulse
trr
tr
t
10%
IF
t
Pulse Generator
(PG-10N)
Rs = 50 Ω
Wave Form
Analyzer
(SAS-8130)
Ri = 50 Ω
A
90%
VR
Irr = 10 mA
tp = 2 µs
tr = 0.35 ns
δ = 0.05
IF = 100 mA
IR = 100 mA
RL = 100 Ω
Publication date: October 2003
SKH00135AED
1
This product complies with the RoHS Directive (EU 2002/95/EC).
MA2SD29
IF VF
IR VR
Ct VR
103
102
10
1
103
25
20
15
10
Ta = 25°C
Ta = 125°C
75°C
102
10
Ta = 125°C
75°C
25°C
−25°C
1
10−1
10−2
10−3
5
10
15
20
25
30
0
0.1
0.2
0.3
0.4
0.5
0.6
0
10
20
25
Reverse voltage VR (V)
Forward voltage VF (V)
Reerse voltage VR (V)
SKH00135AED
2
Request for your special attention and precautions in using the technical information and
semiconductors described in this book
(1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
regulations of the exporting country, especially, those with regard to security export control, must be observed.
(2) The technical information described in this book is intended only to show the main characteristics and application circuit examples
of the products, and no license is granted under any intellectual property right or other right owned by our company or any other
company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other
company which may arise as a result of the use of technical information described in this book.
(3) The products described in this book are intended to be used for standard applications or general electronic equipment (such as office
equipment, communications equipment, measuring instruments and household appliances).
Consult our sales staff in advance for information on the following applications:
– Special applications (such as for airplanes, aerospace, automobiles, traffic contrl equipment, combustion equipment, life support
systems and safety devices) in which exceptional quality and reliability equired, or if the failure or malfunction of the prod-
ucts may directly jeopardize life or harm the human body.
– Any applications other than the standard applications intended.
(4) The products and product specifications described in this book re subjet to change wnotice for modification and/or im-
provement. At the final stage of your design, purchasingouse f the roducts, therfor the most up-to-date Product
Standards in advance to make sure that the latest specifictions saisfy your requirements.
(5) When designing your equipment, comply with the rnge f absolute maximuing nd the guaranteed operating conditions
(operating power supply voltage and operating nvirnt etc.). Especiallyplee be creful not to exceed the range of absolute
maximum rating on the transient state, such as powpower-off and mode-witching. Otherwise, we will not be liable for any
defect which may arise later in your equpment
Even when the products are used withthe guarnteed values, ake nto te cosideration of incidence of break down and failure
mode, possible to occur to semicuctor roducts. Mesures the syems such as redundant design, arresting the spread of fire
or preventing glitch are recomin ordeto prevent pysicainjury, fire, social damages, for example, by using the products.
(6) Comply with the instructionfor ue in rder to prevent reakdown and characteristics change due to external factors (ESD, EOS,
thermal stress and mcanical stress) at the time of handlin, mounting or at customer's process. When using products for which
damp-proof packinis reqred, satisfy the condions, suh as shelf life and the elapsed time since first opening the packages.
(7) This book may e noreprinted or repwhther wholly or partially, without the prior written permission of Matsushita
Electric ndurial Co., Ltd.
相关型号：
MA2SD30
Schottky Barrier Diodes Silicon epitaxial planar type For super high speed switching
PANASONIC
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